公开(公告)号：US20070020487A1

公开(公告)日：2007-01-25

申请号：US11484692

申请日：2006-07-12

申请人： Chee-kheng Lim ,  No-yeol Park ,  Yong-su Kim ,  Hoon-sang Oh

发明人： Chee-kheng Lim ,  No-yeol Park ,  Yong-su Kim ,  Hoon-sang Oh

IPC分类号： G11B5/65 ,  B05D5/12

CPC分类号： G11B5/66 ,  G11B5/65 ,  G11B5/667 ,  G11B5/7379

摘要： Provided is a perpendicular magnetic recording medium. The perpendicular magnetic recording medium includes: a lower structure; and a recording layer formed on the lower structure, wherein the recording layer has a balancing force 2πMr2/K1 of 0.5 or less and a factor 4πMr/Hc of 0.8 or less where Mr denotes a remnant magnetization, K1 denotes a perpendicular magnetic anisotropy energy constant, and Hc denotes a coercive force. Accordingly, even though grain boundaries between grains that constitute the recording layer are somewhat non-uniform in width, the grains can have almost the same nucleation field. As a result, the perpendicular magnetic recording medium can ensure high recording density and stability of recorded information.

摘要翻译： 提供了一种垂直磁记录介质。 垂直磁记录介质包括：下结构; 以及形成在下部结构上的记录层，其中记录层具有0.5或更小的平衡力2piMr 2 / K 1和0.8或更小的因子4piMr / Hc，其中Mr表示残余磁化强度 ，K 1表示垂直磁各向异性能常数，Hc表示矫顽力。 因此，即使构成记录层的晶粒之间的晶界在宽度上有些不均匀，晶粒也可以具有几乎相同的成核场。 结果，垂直磁记录介质可以确保记录信息的高记录密度和稳定性。

公开(公告)号：US20060093865A1

公开(公告)日：2006-05-04

申请号：US11259085

申请日：2005-10-27

申请人： Chee-kheng Lim ,  Yong-su Kim ,  Byung-kyu Lee ,  Hoon-sang Oh ,  Tae-hyo Lee

发明人： Chee-kheng Lim ,  Yong-su Kim ,  Byung-kyu Lee ,  Hoon-sang Oh ,  Tae-hyo Lee

IPC分类号： G11B5/66

CPC分类号： G11B5/66 ,  G11B5/653 ,  G11B5/656 ,  G11B5/667

摘要： A recording medium including a perpendicular magnetic recording layer and a laminated SUL formed on a substrate is provided. The SUL includes an antiferromagnetic layer interposed between laminated structures including a magnetic layer, a non-magnetic layer and a magnetic layer. The layers may each have a thickness of 20 nm or less and the layers below the antiferromagnetic layer may be thinner than the layers on the antiferromagnetic layer. The laminated structures formed on and below the antiferromagnetic layer have unidirectional magnetic anisotropies set in the opposite radial direction to each other by an exchange bias. As a result, media magnetic domain noise can be diminished.

公开(公告)号：US08361641B2

公开(公告)日：2013-01-29

申请号：US12018270

申请日：2008-01-23

申请人： Seong-yong Yoon ,  Chee-kheng Lim ,  Hoo-san Lee ,  Hoon-sang Oh ,  Sok-hyun Kong

发明人： Seong-yong Yoon ,  Chee-kheng Lim ,  Hoo-san Lee ,  Hoon-sang Oh ,  Sok-hyun Kong

IPC分类号： G11B5/66

CPC分类号： G11B5/667 ,  G11B5/64 ,  G11B5/65 ,  G11B5/7325 ,  G11B5/84

摘要： A perpendicular magnetic recording medium and a method of manufacturing the same are provided. The perpendicular magnetic recording medium comprises a recording layer including a plurality of regions formed in the depth direction of the recording layer and a magnetic anisotropy constant of a region relatively deeper than another region, among the plurality of regions, is greater than that of the another region. The method of manufacturing a perpendicular magnetic recording medium includes: forming a recording layer having perpendicular magnetic anisotropy; and irradiating the recording layer with ions.

摘要翻译： 提供了一种垂直磁记录介质及其制造方法。 垂直磁记录介质包括记录层，该记录层包括在记录层的深度方向上形成的多个区域和多个区域中比另一区域相对更深的区域的磁各向异性常数大于另一区域的磁各向异性常数 地区。 制造垂直磁记录介质的方法包括：形成具有垂直磁各向异性的记录层; 并用离子照射记录层。

公开(公告)号：US08115238B2

公开(公告)日：2012-02-14

申请号：US11850988

申请日：2007-09-06

申请人： Chee-kheng Lim ,  Eun-sik Kim ,  In-jun Hwang

发明人： Chee-kheng Lim ,  Eun-sik Kim ,  In-jun Hwang

IPC分类号： H01L27/148

CPC分类号： G11C11/15 ,  G11C19/0808

摘要： Provided is a memory device employing magnetic domain wall movement. The memory device includes a writing track and a column structure. The writing track forms magnetic domains that have predetermined magnetization directions. The column structure is formed on the writing track and includes at least one interconnecting layer and at least one storage track.

摘要翻译： 提供了采用磁畴壁运动的存储器件。 存储器件包括写入轨道和列结构。 写入轨迹形成具有预定磁化方向的磁畴。 列结构形成在写入轨道上，并且包括至少一个互连层和至少一个存储轨道。

公开(公告)号：US20120015452A1

公开(公告)日：2012-01-19

申请号：US13200358

申请日：2011-09-23

申请人： Chee-kheng Lim

发明人： Chee-kheng Lim

IPC分类号： H01L21/8246 ,  B82Y99/00

CPC分类号： G11C11/14 ,  G11C19/0808 ,  Y10S977/933 ,  Y10S977/935

摘要： In an information storage device, a writing magnetic layer is formed on a substrate and has a magnetic domain wall. A connecting magnetic layer is formed on the writing magnetic layer, and an information storing magnetic layer is formed on an upper portion of side surfaces of the connecting magnetic layer. A reader reads information stored in the information storing magnetic layer.

摘要翻译： 在信息存储装置中，写入磁性层形成在基板上并具有磁畴壁。 在写入磁性层上形成连接磁性层，在连接磁性层的侧面上部形成信息存储磁性层。 读取器读取存储在信息存储磁性层中的信息。

公开(公告)号：US20110223279A1

公开(公告)日：2011-09-15

申请号：US13113534

申请日：2011-05-23

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： B29C59/02

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

公开(公告)号：US07968253B2

公开(公告)日：2011-06-28

申请号：US11745609

申请日：2007-05-08

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： G03F1/00

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

公开(公告)号：US07957175B2

公开(公告)日：2011-06-07

申请号：US11980353

申请日：2007-10-31

申请人： Chee-kheng Lim ,  Eun-hyoung Cho ,  Sung-hoon Choa

发明人： Chee-kheng Lim ,  Eun-hyoung Cho ,  Sung-hoon Choa

IPC分类号： G11C19/00

CPC分类号： G11C11/14 ,  G11C19/0808 ,  Y10S977/933 ,  Y10S977/935

摘要： An information storage device using movement of magnetic domain walls includes a writing magnetic layer having a magnetic domain wall. A stack structure is formed on the writing magnetic layer. The stack structure includes a connecting magnetic layer and an information storing magnetic layer stacked sequentially. The information storage device also includes a reader for reading information stored in the information storing magnetic layer.

公开(公告)号：US07952906B2

公开(公告)日：2011-05-31

申请号：US11980455

申请日：2007-10-31

申请人： Chee-kheng Lim

发明人： Chee-kheng Lim

IPC分类号： G11C19/00

CPC分类号： G11C11/14 ,  G11C19/0808 ,  Y10S977/933 ,  Y10S977/935

摘要： An information storage device includes a writing magnetic layer including a magnetic domain wall. An information storing magnetic layer is connected to the writing magnetic layer, and includes at least one magnetic domain wall. The information storage device also includes a reader for reading data recorded in the information storing magnetic layer. The connection layer includes a first portion with a first width adjacent to the writing magnetic layer and a second portion with a second width adjacent to the at least one information storing magnetic layer. The first width is less than the second width.

摘要翻译： 信息存储装置包括具有磁畴壁的书写磁性层。 存储磁性层的信息连接到书写磁性层，并且包括至少一个磁畴壁。 信息存储装置还包括用于读取记录在信息存储磁性层中的数据的读取器。 连接层包括具有与书写磁性层相邻的第一宽度的第一部分和与存储磁性层的至少一个信息相邻的第二宽度的第二部分。 第一宽度小于第二宽度。

公开(公告)号：US07902579B2

公开(公告)日：2011-03-08

申请号：US11505969

申请日：2006-08-18

申请人： Chee-kheng Lim ,  Eun-sik Kim ,  Yong-su Kim

发明人： Chee-kheng Lim ,  Eun-sik Kim ,  Yong-su Kim

IPC分类号： G11C11/02

CPC分类号： G11C11/15 ,  G11C11/5607 ,  G11C19/0808 ,  H01L27/228

摘要： A magnetic memory device includes a memory region, an input and a sensor. The memory region includes a free layer, a pinned layer and a non-magnetic layer. The free layer has adjacent sectors and a magnetic domain wall. The pinned layer corresponds to the sectors and has a fixed magnetization direction. The non-magnetic layer is formed between the free layer and the pinned layer. The memory region includes a magnetic domain wall stopper for stopping the magnetic domain wall formed at each boundary of the sectors. The input is electrically connected to one end of the free layer for inputting a signal for magnetic domain dragging. The sensor measures a current flowing through the memory region.

摘要翻译： 磁存储器件包括存储区域，输入端和传感器。 存储区包括自由层，钉扎层和非磁性层。 自由层具有相邻扇区和磁畴壁。 被钉扎层对应于扇区并且具有固定的磁化方向。 非磁性层形成在自由层和被钉扎层之间。 存储区域包括用于停止形成在扇区的每个边界处的磁畴壁的磁畴壁塞。 输入电连接到自由层的一端，用于输入用于磁畴拖动的信号。 传感器测量流过存储器区域的电流。