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公开(公告)号：US07348264B2
公开(公告)日：2008-03-25
申请号：US11741861
申请日：2007-04-30
IPC分类号： H01L21/26
CPC分类号： H01L21/2236 , H01J37/32412 , H01L29/66795
摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.
摘要翻译： 实现了可以精确控制剂量的等离子体掺杂方法。 剂量的面内均匀性得到改善。 已经发现，如果通过将B 2 H 2 H 6 / He / He等离子体照射到硅衬底上施加偏压，则存在硼剂量为 与能够确保装置控制的可重复性的时间相比，饱和时间比较长，易于稳定地使用。 本发明已经确定了结果。 也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。 此外，如果时间进一步增加，则剂量降低。 剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。
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公开(公告)号：US20110217830A1
公开(公告)日：2011-09-08
申请号：US13108625
申请日：2011-05-16
IPC分类号： H01L21/26
CPC分类号： H01L21/26513 , H01J37/32091 , H01J37/32412 , H01L21/2236
摘要： There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine.
摘要翻译： 提供了等离子体掺杂方法和装置，其具有优异的再现性，注入到样品表面的杂质浓度。 在真空容器中，在通过设置在对电极中的气体喷出孔朝向设置在试样电极上的基板喷射气体的状态下，通过作为排气装置的涡轮分子泵从真空容器排出气体， 通过压力调节阀将真空容器保持在预定压力，相对电极的面积将对置电极和样品电极之间的距离设定得足够小，以防止等离子体向外扩散，并且 在对电极和样品电极之间产生电容耦合等离子体，以进行等离子体掺杂。 本文使用的气体是含有低浓度的气体，其含有诸如乙硼烷或膦的杂质。
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公开(公告)号：US20090186426A1
公开(公告)日：2009-07-23
申请号：US11887456
申请日：2006-03-28
申请人： Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno
发明人： Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno
CPC分类号： H01L21/2236 , H01J37/32412
摘要： A plasma doping method and a plasma doping apparatus, having a superior in-plane uniformity of an amorphous layer formed on a sample surface, are provided.In the plasma doping method by which plasma is generated within a vacuum chamber, and impurity ions contained in the plasma are caused to collide with the surface of the sample so as to quality-change the surface of the sample into an amorphous state thereof, a plasma irradiation time is adjusted in order to improve an in-plane uniformity. If the plasma irradiation time becomes excessively short, then a fluctuation of the plasma is transferred to depths of an amorphous layer formed on a silicon substrate, so that the in-plane uniformity is deteriorated. On the other hand, if the irradiation time becomes excessively long, then an effect for sputtering the surface of the silicon substrate by using the plasma becomes dominant, then the in-plane uniformity is deteriorated. While a proper plasma irradiation time present in an intermediate time between the long plasma irradiation time and the short plasma irradiation time is found out, during which the in-plane uniformity becomes better, a plasma doping process is carried out within the intermediate time.
摘要翻译： 提供了在样品表面上形成的非晶层具有优异的面内均匀性的等离子体掺杂方法和等离子体掺杂装置。 在真空室内产生等离子体的等离子体掺杂方法中，使包含在等离子体中的杂质离子与样品的表面碰撞，从而使样品的表面质量变为非晶态， 调整等离子体照射时间以提高面内均匀性。 如果等离子体照射时间变得过短，则将等离子体的波动转移到在硅衬底上形成的非晶层的深度，使得面内均匀性变差。 另一方面，如果照射时间变得过长，则通过使用等离子体对硅衬底的表面进行溅射的效果变得主导，则面内均匀性劣化。 而在长等离子体照射时间和短等离子体照射时间之间存在中等时间的合适的等离子体照射时间的同时，在平面内均匀性变好的情况下，在中间时间内进行等离子体掺杂工序。
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公开(公告)号：US20080318399A1
公开(公告)日：2008-12-25
申请号：US12139968
申请日：2008-06-16
IPC分类号： H01L21/26
CPC分类号： H01L21/2236 , H01J37/32412 , H01L29/66795
摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved.It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.
摘要翻译： 实现了可以精确控制剂量的等离子体掺杂方法。 剂量的面内均匀性得到改善。 已经发现，如果通过将B2H6 / He等离子体照射到硅衬底上施加偏压，则存在使硼剂量基本均匀的时间，并且饱和时间比较长并且易于稳定使用， 与可以确保装置控制的可重复性的时间相比。 本发明已经确定了结果。 也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。 此外，如果时间进一步增加，则剂量降低。 剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。
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公开(公告)号：US07407874B2
公开(公告)日：2008-08-05
申请号：US11647149
申请日：2006-12-29
IPC分类号： H01L21/26
CPC分类号： H01L21/2236 , H01J37/32412 , H01L29/66795
摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved.It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.
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公开(公告)号：US07358511B2
公开(公告)日：2008-04-15
申请号：US11748607
申请日：2007-05-15
CPC分类号： H01L21/2236 , C23C14/48 , H01J37/32412
摘要： A plasma doping method, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. The method includes preparing a vacuum chamber having a film containing an impurity formed on an inner wall thereof such that, when the film is attacked by ions in plasma, the amount of an impurity to be doped into the surface of a sample by sputtering is not changed even though the plasma containing the impurity ions is repeatedly generated in the vacuum chamber; placing the sample on the sample electrode; and irradiating the plasma containing the impurity ions so as to implant the impurity ions into the sample, and doping the impurity into the sample by sputtering from the film containing the impurity fixed to the inner wall of the vacuum chamber.
摘要翻译： 即使重复进行等离子体掺杂处理，等离子体掺杂法也可以每次从膜到硅衬底的剂量均匀。 该方法包括制备具有含有形成在其内壁上的杂质的膜的真空室，使得当膜受到等离子体中的离子侵蚀时，通过溅射将待掺杂到样品表面的杂质的量不是 即使在真空室中重复产生含有杂质离子的等离子体，也发生了变化; 将样品放置在样品电极上; 并且照射含有杂质离子的等离子体，以将杂质离子注入到样品中，并通过溅射从固定在真空室内壁上的杂质的薄膜溅射到杂质中。
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公开(公告)号：US20070176124A1
公开(公告)日：2007-08-02
申请号：US11730244
申请日：2007-03-30
IPC分类号： H01J37/08
CPC分类号： H01L21/2236 , C23C14/48 , H01J37/32412
摘要： Disclosed is a plasma doping method that, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. According to an embodiment of the invention, there is provided a plasma doping method that places a sample on a sample electrode in a vacuum chamber, generates plasma in the vacuum chamber, and causes impurity ions in the plasma to collide against a surface of the sample so as to form an impurity doped layer in the surface of the sample. The plasma doping method includes a maintenance step of preparing the vacuum chamber having a film containing an impurity formed on an inner wall thereof such that, when the film containing the impurity fixed to the inner wall of the vacuum chamber is attacked by ions in the plasma, the amount of an impurity to be doped into the surface of the sample by sputtering is not changed even though the plasma containing the impurity ions is repeatedly generated in the vacuum chamber, a step of placing the sample on the sample electrode, and a step of irradiating the plasma containing the impurity ions so as to implant the impurity ions into the sample, and doping the impurity into the sample by sputtering from the film containing the impurity fixed to the inner wall of the vacuum chamber.
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公开(公告)号：US20080210167A1
公开(公告)日：2008-09-04
申请号：US12122492
申请日：2008-05-16
申请人： Bunji Mizino , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizino , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： C23C16/44
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.
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公开(公告)号：US20090233385A1
公开(公告)日：2009-09-17
申请号：US12158820
申请日：2007-10-04
申请人： Tomohiro Okumura , Hisao Nagai , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno
发明人： Tomohiro Okumura , Hisao Nagai , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno
IPC分类号： H01L21/66 , C23C16/513 , B05C11/00
CPC分类号： H01J37/32412 , C23C14/564 , H01L21/2236
摘要： Before a plasma doping process is performed, there is generated a plasma of a gas containing an element belonging to the same group in the periodic table as the primary element of a silicon substrate 9, e.g., a monosilane gas, in a vacuum chamber 1. Thus, the inner wall of the vacuum chamber 1 is covered with a silicon-containing film. Then, a plasma doping process is performed on the silicon substrate 9.
摘要翻译： 在进行等离子体掺杂工艺之前，在真空室1中产生含有作为硅衬底9（例如，单硅烷气体）的主要元素的元素周期表中属于同一组的元素的气体等离子体。 因此，真空室1的内壁被含硅膜覆盖。 然后，在硅衬底9上进行等离子体掺杂工艺。
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公开(公告)号：US20080233723A1
公开(公告)日：2008-09-25
申请号：US12137897
申请日：2008-06-12
IPC分类号： H01L21/265 , C23C16/44
CPC分类号： H01L21/26513 , H01J37/32091 , H01J37/32412 , H01L21/2236
摘要： There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine.
摘要翻译： 提供了等离子体掺杂方法和装置，其具有优异的再现性，注入到样品表面的杂质浓度。 在真空容器中，在通过设置在对电极中的气体喷出孔朝向设置在试样电极上的基板喷射气体的状态下，通过作为排气装置的涡轮分子泵从真空容器排出气体， 通过压力调节阀将真空容器保持在预定压力，相对电极的面积将对置电极和样品电极之间的距离设定得足够小，以防止等离子体向外扩散，并且 在对电极和样品电极之间产生电容耦合等离子体，以进行等离子体掺杂。 本文使用的气体是含有低浓度的气体，其含有诸如乙硼烷或膦的杂质。
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