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    PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC WINDOW USED THEREIN, AND MANUFACTURING METHOD OF SUCH A DIELECTRIC WINDOW
    2.
    发明申请
    PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC WINDOW USED THEREIN, AND MANUFACTURING METHOD OF SUCH A DIELECTRIC WINDOW 审中-公开
    等离子体处理装置，等离子体处理方法，使用的电介质窗口以及这样的电介质窗口的制造方法

    公开(公告)号：US20090130335A1

    公开(公告)日：2009-05-21

    申请号：US12065586

    申请日：2006-09-01

    申请人： Tomohiro Okumura ,  Hiroyuki Ito ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Ichiro Nakayama ,  Shogo Okita ,  Hisao Nagai

    发明人： Tomohiro Okumura ,  Hiroyuki Ito ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Ichiro Nakayama ,  Shogo Okita ,  Hisao Nagai

    IPC分类号： H05H1/24 ,  B05C11/00

    CPC分类号： H01J37/321

    摘要： A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window. The flow rates of gases that are introduced through the gas flow-out holes and the gas flow-out holes, respectively, can be controlled independently of each other, whereby the uniformity of processing can be increased.

    摘要翻译： 一种均匀性高的等离子体掺杂的方法。 将预定气体从气体供给装置引入真空容器中，同时通过作为排气装置的涡轮分子泵通过排气孔排出。 通过压力调节阀将真空容器内的压力保持在规定值。 13.56MHz的高频功率从高频电源供给到靠近与样品电极相对的电介质窗口的线圈，由此在真空容器中产生感应耦合等离子体。 电介质窗由多个电介质板构成，并且在至少两个彼此相对的电介质板的至少一个表面上形成槽。 气体通道由槽和与槽相对的平坦表面形成，并且形成在电介质板中最靠近样品电极的气体流出孔与电介质窗内的凹槽连通。 分别通过气体流出孔和气体流出孔引入的气体的流量可以彼此独立地控制，从而可以提高处理的均匀性。

    Plasma doping device with gate shutter
    4.
    发明授权
    Plasma doping device with gate shutter 失效
    带闸门的等离子体掺杂装置

    公开(公告)号：US08257501B2

    公开(公告)日：2012-09-04

    申请号：US11887323

    申请日：2006-03-29

    申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

    发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

    IPC分类号： C23C16/00

    CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32458 ,  H01J37/32623 ,  H01J37/32633

    摘要： In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided. Uniformity of processing is enhanced by driving a gate shutter (18) and covering a through gate (16).

    摘要翻译： 在根据本发明的等离子体掺杂装置中，在从气体供应装置（2）引入预定气体的同时，通过排气口11将真空室（1）作为排气装置用涡轮分子泵（3）抽真空 ），以便通过压力调节阀（4）将真空室（1）的内部保持在预定压力。 高频电源（5）将13.56MHz的高频功率提供给设置在与样品电极（6）相对的电介质窗口（7）附近的线圈（8），以产生电感耦合 真空室（1）中的等离子体。 提供了用于向样品电极（6）提供高频电力的高频电源（10）。 通过驱动闸门（18）并覆盖通过门（16）来增强处理的均匀性。

    Method and apparatus for plasma processing
    6.
    发明授权
    Method and apparatus for plasma processing 失效
    等离子体处理方法和装置

    公开(公告)号：US07601619B2

    公开(公告)日：2009-10-13

    申请号：US11887821

    申请日：2006-04-04

    申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/42 ,  H01J37/32 ,  C23F4/00

    CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32412

    摘要： A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a turbo-molecular pump while introducing the gas within the vacuum chamber from a gas supply device, and the pressure within the vacuum chamber is kept at a predetermined value by a pressure regulating valve. A high-frequency power supply for a plasma source supplies a high-frequency power to a coil provided near a dielectric window to generate inductively coupled plasma within the vacuum chamber. A high-frequency power supply for the sample electrode for supplying the high-frequency power to the sample electrode is provided. A matching circuit for the sample electrode and a high-frequency sensor are provided between the sample electrode high-frequency power supply and the sample electrode. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor and an arithmetic device.

    摘要翻译： 一种用于等离子体处理的方法和装置，其可以精确地监测施加到样品表面的离子电流。 通过涡轮分子泵通过排气口排出预定气体，同时从气体供给装置引入真空室内的气体，并通过压力调节阀将真空室内的压力保持在预定值。 用于等离子体源的高频电源为设置在电介质窗附近的线圈提供高频电力，以在真空室内产生电感耦合等离子体。 提供了用于向样品电极提供高频电力的样品电极的高频电源。 在样品电极高频电源和样品电极之间设置用于样品电极和高频传感器的匹配电路。 使用高频传感器和运算装置，可以精确地监视施加到样品表面的离子电流。

    PLASMA DOPING METHOD
    9.
    发明申请
    PLASMA DOPING METHOD 失效
    等离子喷涂方法

    公开(公告)号：US20070190759A1

    公开(公告)日：2007-08-16

    申请号：US11741861

    申请日：2007-04-30

    申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

    发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

    IPC分类号： H01L21/26 ,  H01L21/42

    CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01L29/66795

    摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

    摘要翻译： 实现了可以精确控制剂量的等离子体掺杂方法。 剂量的面内均匀性得到改善。 已经发现，如果通过将B 2 H 2 H 6 / He / He等离子体照射到硅衬底上施加偏压，则存在硼剂量为 与能够确保装置控制的可重复性的时间相比，饱和时间比较长，易于稳定地使用。 本发明已经确定了结果。 也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。 此外，如果时间进一步增加，则剂量降低。 剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。

    Plasma doping method
    10.
    发明申请
    Plasma doping method 失效
    等离子体掺杂法

    公开(公告)号：US20070166846A1

    公开(公告)日：2007-07-19

    申请号：US11647149

    申请日：2006-12-29

    申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

    发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

    IPC分类号： H01L21/66 ,  H01L21/04 ,  G01R31/26

    CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01L29/66795

    摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

    摘要翻译： 实现了可以精确控制剂量的等离子体掺杂方法。 剂量的面内均匀性得到改善。 已经发现，如果通过将B 2 H 2 H 6 / He / He等离子体照射到硅衬底上施加偏压，则存在硼剂量为 与能够确保装置控制的可重复性的时间相比，饱和时间比较长，易于稳定地使用。 本发明已经确定了结果。 也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。 此外，如果时间进一步增加，则剂量降低。 剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。