公开(公告)号：US20110031568A1

公开(公告)日：2011-02-10

申请号：US12935270

申请日：2009-05-29

Applicant: Atsushi Kandori ,  Chienliu Chang ,  Makoto Takagi

Inventor： Atsushi Kandori ,  Chienliu Chang ,  Makoto Takagi

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81B3/0086 ,  B81B2207/07

Abstract: A structure having a plurality of conductive regions insulated electrically from each other comprises a movable piece supported movably above the upper face of the conductive region, the movable piece having an electrode in opposition to the conductive region, the structure being constructed to be capable of emitting and receiving electric signals through the lower face of the conductive region, the plural conductive regions being insulated by sequentially connected oxidized regions formed from an oxide of a material having through-holes or grooves.

Abstract translation: 具有彼此电绝缘的多个导电区域的结构包括可移动件，其被可移动地支撑在导电区域的上表面上方，所述可移动件具有与导电区域相对的电极，该结构被构造为能够发射 并且通过导电区域的下表面接收电信号，多个导电区域通过由具有通孔或凹槽的材料的氧化物形成的顺序连接的氧化区域而被绝缘。

公开(公告)号：US07767106B2

公开(公告)日：2010-08-03

申请号：US11775561

申请日：2007-07-10

Applicant: Chienliu Chang

Inventor： Chienliu Chang

IPC: B44C1/22

CPC classification number: H01L31/1884 ,  H01L31/022466 ,  H01L31/022483 ,  Y02E10/50

Abstract: Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.

Abstract translation: 提供了至少包含In，Ga和Zn的氧化物半导体膜的干式蚀刻方法，其包括在含有卤素系气体的气体气氛中蚀刻氧化物半导体膜。

公开(公告)号：US20100123366A1

公开(公告)日：2010-05-20

申请号：US12615070

申请日：2009-11-09

Applicant: Chienliu Chang

Inventor： Chienliu Chang

IPC: H02N11/00 ,  H04R31/00

CPC classification number: B81C1/00158 ,  B06B1/0292 ,  B81B2201/0285 ,  H04R19/005 ,  H04R31/00 ,  H04R2201/003 ,  Y10T29/49005 ,  Y10T29/49007

Abstract: An electromechanical transducer of the present invention includes a first electrode, a vibrating membrane formed above the first electrode through a gap, a second electrode formed on the vibrating membrane, and an insulating protective layer formed on a surface of the second electrode side. A region where the protective layer is not formed is present on at least part of a surface of the vibrating membrane.

Abstract translation: 本发明的机电换能器包括第一电极，通过间隙形成在第一电极上方的振动膜，形成在振动膜上的第二电极和形成在第二电极侧的表面上的绝缘保护层。 在振动膜的表面的至少一部分上存在未形成保护层的区域。

公开(公告)号：US20100035378A1

公开(公告)日：2010-02-11

申请号：US12514209

申请日：2007-11-20

Applicant: Chienliu Chang

Inventor： Chienliu Chang

IPC: H01L21/465 ,  C09K13/00

CPC classification number: H01L29/7869 ,  H01L21/465 ,  H01L29/66969

Abstract: An etching method is provided in which selective etching can be carried out for an amorphous oxide semiconductor film including at least one of gallium and zinc, and indium. In the etching method, the selective etching is performed using an alkaline etching solution. The alkaline etching solution contains especially ammonia in a specific concentration range.

Abstract translation: 提供了一种蚀刻方法，其中可以对包括镓和锌中的至少一种以及铟的非晶氧化物半导体膜进行选择性蚀刻。 在蚀刻方法中，使用碱性蚀刻溶液进行选择性蚀刻。 碱性蚀刻溶液特别含有特定浓度范围的氨。

公开(公告)号：US20090296515A1

公开(公告)日：2009-12-03

申请号：US11722938

申请日：2006-12-27

Applicant: Takahiro Ezaki ,  Susumu Yasuda ,  Mamoru Tsukada ,  Takayuki Teshima ,  Kazumichi Nakahama ,  Chienliu Chang

Inventor： Takahiro Ezaki ,  Susumu Yasuda ,  Mamoru Tsukada ,  Takayuki Teshima ,  Kazumichi Nakahama ,  Chienliu Chang

IPC: B01F15/02 ,  B01F15/06 ,  H01L21/306

CPC classification number: B01F13/0059 ,  B01F5/0256 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00828 ,  B01J2219/00889 ,  B01J2219/0095 ,  B01J2219/00952

Abstract: A fluid mixing apparatus is constituted by a plurality of flow passageways for conveying fluids, respectively, and jet outlets, corresponding to and communicating with the flow passageways, respectively, for jetting the fluids therefrom so that movement directions of the fluids intersect each other to mix the fluids. The jet outlets are provided at a surface of a substrate in which the flow passageways are provided. At least one of the flow passageways communicating with at least one of the jet outlets has a center axis partially shifted from a center axis of at least one of the jet outlets so as to incline a movement direction of a fluid jetted from at least one of the jet outlets with respect to the surface of the substrate.

Abstract translation: 流体混合装置由分别用于输送流体的多个流动通道和分别对应于流动通道并与流动通道连通的喷射出口构成，用于从其中喷射流体，使得流体的移动方向彼此相交以混合 流体。 喷射出口设置在设置有流路的基板的表面。 与至少一个喷射出口连通的至少一个流动通道具有一个中心轴线，该中心轴线从至少一个喷射出口的中心轴线部分地移动，以便使流体从至少一个喷射出口喷射的流体的运动方向倾斜 喷射出口相对于基底的表面。

公开(公告)号：US20090031548A1

公开(公告)日：2009-02-05

申请号：US12173158

申请日：2008-07-15

Applicant: Yoshitaka Zaitsu ,  Chienliu Chang ,  Masao Majima

Inventor： Yoshitaka Zaitsu ,  Chienliu Chang ,  Masao Majima

IPC: B23P9/00

CPC classification number: B81C1/00174 ,  B81B2203/058 ,  Y10T29/4902 ,  Y10T29/49861 ,  Y10T29/49904 ,  Y10T29/49922

Abstract: In a structure fabrication method for fabricating a structure including an inclined part inclined to a principal plane of a substrate by plastically deforming a work piece having the substrate with the principal plane, the structure fabrication method includes the steps of providing in the work piece a projection configured to protrude from a first surface and away from the principal plane of the substrate; and bending the work piece toward a second surface opposite to the first surface. The bending is accomplished by applying a force on a block including an inclined pressure plane that is abutted on the projection for plastically deforming the work piece, in which in bending the work piece, the direction of a first force applied on the work piece intersects with the direction of a second force of the inclined pressure plane pushing the projection.

Abstract translation: 在一种结构制造方法中，所述结构制造方法包括以下步骤：在所述工件上设置突起部，所述突出部 被配置为从所述第一表面突出并远离所述基板的主平面; 并且将工件朝着与第一表面相对的第二表面弯曲。 弯曲是通过在包括倾斜压力平面的块上施加力来实现的，所述倾斜压力平面抵靠在突出部上，用于使工件塑性变形，其中在弯曲工件时，施加在工件上的第一力的方向与 推动突起的倾斜压力平面的第二力的方向。

公开(公告)号：US20070287296A1

公开(公告)日：2007-12-13

申请号：US11802276

申请日：2007-05-22

Applicant: Chienliu Chang

Inventor： Chienliu Chang

IPC: H01L21/465

CPC classification number: H01L21/465 ,  H01L29/66969 ,  H01L29/7869 ,  H01L31/1884 ,  Y02E10/50

Abstract: Provided is a dry etching method for an oxide semiconductor film made of In—Ga—Zn—O, in which an etching gas containing a hydrocarbon is used in a dry etching process for the oxide semiconductor film made of In—Ga—Zn—O formed on a substrate.

Abstract translation: 提供了一种由In-Ga-Zn-O制成的氧化物半导体膜的干蚀刻方法，其中在由In-Ga-Zn-O制成的氧化物半导体膜的干法蚀刻工艺中使用含有烃的蚀刻气体 形成在基板上。