公开(公告)号：USD662068S1

公开(公告)日：2012-06-19

申请号：US29403075

申请日：2011-09-30

Applicant: Chiu-Lin Yao ,  Chia-Liang Hsu ,  Ching-Bei Lin ,  Sheng-Fang Hung

Designer： Chiu-Lin Yao ,  Chia-Liang Hsu ,  Ching-Bei Lin ,  Sheng-Fang Hung

公开(公告)号：US20100314657A1

公开(公告)日：2010-12-16

申请号：US12813621

申请日：2010-06-11

Applicant: Min-Hsun Hsieh ,  Chien-Yuan Wang ,  Jin-Ywan Lin ,  Chiu-Lin Yao

Inventor： Min-Hsun Hsieh ,  Chien-Yuan Wang ,  Jin-Ywan Lin ,  Chiu-Lin Yao

IPC: H01L33/42

CPC classification number: H01L33/42 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.

Abstract translation: 光电子器件包括半导体叠层层; 位于半导体堆叠层上的第一透明导电氧化物（以下简称为“TCO”）层，其中第一TCO层具有至少一个开口; 以及覆盖所述第一TCO层的第二TCO层，其中所述第二TCO层填充到所述第一TCO层的开口中并与所述半导体堆叠层接触，并且所述第一TCO层和所述第二TCO层中的一个形成欧姆接触 与半导体堆叠层。

公开(公告)号：US07834369B2

公开(公告)日：2010-11-16

申请号：US12230054

申请日：2008-08-22

Applicant: Chiu-Lin Yao ,  Ta-Cheng Hsu

Inventor： Chiu-Lin Yao ,  Ta-Cheng Hsu

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L33/387 ,  H01L2933/0016

Abstract: This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.

Abstract translation: 本发明提供一种具有粗糙表面的光电半导体器件及其制造方法。 光电子半导体器件包括具有粗糙表面的半导体堆叠和覆盖半导体叠层的电极层。 粗糙表面包括具有第一形貌的第一区域和具有第二形貌的第二区域。 该方法包括以下步骤：在衬底上形成半导体堆叠，在半导体堆叠上形成电极层，热处理半导体堆叠，以及湿蚀刻半导体叠层的表面以形成粗糙表面。

公开(公告)号：US20090302334A1

公开(公告)日：2009-12-10

申请号：US12482419

申请日：2009-06-10

Applicant: Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Wen-Huang Liu

Inventor： Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Wen-Huang Liu

IPC: H01L33/00 ,  H01L29/88

CPC classification number: H01L25/0753 ,  F21K9/00 ,  H01L27/153 ,  H01L2224/24 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting element array includes a conductive substrate; an adhesive layer disposed on the conductive substrate; a first epitaxial light-emitting stack layers disposed on the adhesive layer, the first epitaxial light-emitting stack layers including a first p-contact and an first n-contact, wherein the first p-contact and the first n-contact are disposed on the same side of the first epitaxial light-emitting stack layer; and a second epitaxial light-emitting stack layers disposed on the adhesive layer including a second p-contact and an second n-contact, wherein the second p-contact and the second n-contact are disposed on the opposite side of the epitaxial light-emitting stack layer; wherein the first epitaxial light-emitting stack layers and the second epitaxial light-emitting stack layers are electrically connected in anti-parallel.

Abstract translation: 发光元件阵列包括导电基板; 设置在导电基板上的粘合剂层; 布置在所述粘合剂层上的第一外延发光堆叠层，所述第一外延发光堆叠层包括第一p型接触和第一n型接触，其中所述第一p型接触和所述第一n型接触设置在 第一外延发光堆叠层的同一侧; 以及设置在所述粘合剂层上的第二外延发光叠层，包括第二p型接触和第二n型接触，其中所述第二p型接触和所述第二n型接触设置在所述外延发光层的相对侧上， 发射堆叠层; 其中所述第一外延发光堆叠层和所述第二外延发光堆叠层以反并联方式电连接。

公开(公告)号：US20090050930A1

公开(公告)日：2009-02-26

申请号：US12230054

申请日：2008-08-22

Applicant: Chiu-Lin Yao ,  Ta-Cheng Hsu

Inventor： Chiu-Lin Yao ,  Ta-Cheng Hsu

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L33/387 ,  H01L2933/0016

Abstract: This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.

Abstract translation: 本发明提供一种具有粗糙表面的光电半导体器件及其制造方法。 光电子半导体器件包括具有粗糙表面的半导体叠层和覆盖半导体叠层的电极层。 粗糙表面包括具有第一形貌的第一区域和具有第二形貌的第二区域。 该方法包括以下步骤：在衬底上形成半导体堆叠，在半导体堆叠上形成电极层，热处理半导体堆叠，以及湿蚀刻半导体叠层的表面以形成粗糙表面。