公开(公告)号：US09825125B2

公开(公告)日：2017-11-21

申请号：US15297261

申请日：2016-10-19

Applicant: DENSO CORPORATION

Inventor： Yuichi Takeuchi

IPC: H01L29/06 ,  H01L21/82 ,  H01L29/66 ,  H01L29/808 ,  H01L29/16 ,  H01L21/04 ,  H01L29/10

CPC classification number: H01L29/063 ,  H01L21/0455 ,  H01L21/0475 ,  H01L21/8213 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1058 ,  H01L29/1066 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/8083

Abstract: In a silicon carbide semiconductor device, a trench penetrates a source region and a first gate region and reaches a drift layer. On an inner wall of the trench, a channel layer of a first conductivity-type is formed by epitaxial growth. On the channel layer, a second gate region of a second conductivity-type is formed. A first depressed portion is formed at an end portion of the trench to a position deeper than a thickness of the source region so as to remove the source region at the end portion of the trench. A corner portion of the first depressed portion is covered by a second conductivity-type layer.

公开(公告)号：US09614071B2

公开(公告)日：2017-04-04

申请号：US14262121

申请日：2014-04-25

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Masahiro Sugimoto ,  Yuichi Takeuchi

IPC: H01L29/94 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16

CPC classification number: H01L29/7813 ,  H01L29/0623 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608

Abstract: A semiconductor device formed on a silicon carbide substrate that has a front surface on which an electrode is provided and a back surface on which an electrode is provided includes a drain layer, a drift layer, a base layer, a gate electrode that is located in a trench that extends from the front surface into the drift layer and is insulated by an insulating film, a source layer, a buried layer that is provided between the drift layer and the base layer and is formed such that the depth from the front surface to an end thereof on the side of the drift layer is greater than the depth from the front surface to a distal end of the trench, and a first epitaxial layer that is provided between the buried layer and the base layer and has a higher impurity concentration than the buried layer.

公开(公告)号：US09515160B2

公开(公告)日：2016-12-06

申请号：US15001726

申请日：2016-01-20

Applicant: DENSO CORPORATION ,  KAZUMI CHIDA

Inventor： Yuichi Takeuchi ,  Kazumi Chida ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC: H01L29/66 ,  H01L29/423 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/04 ,  H01L29/739 ,  H01L29/78 ,  H01L29/16 ,  H01L29/04 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/66068 ,  H01L21/02529 ,  H01L21/0455 ,  H01L21/0475 ,  H01L21/049 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

Abstract: In a method for producing an SiC semiconductor device, a p type layer is formed in a trench by epitaxially growing, and is then left only on a bottom portion and ends of the trench by hydrogen etching, thereby to form a p type SiC layer. Thus, the p type SiC layer can be formed without depending on diagonal ion implantation. Since it is not necessary to separately perform the diagonal ion implantation, it is less likely that a production process will be complicated due to transferring into an ion implantation apparatus, and thus manufacturing costs reduce. Since there is no damage due to a defect caused by the ion implantation, it is possible to reduce a drain leakage and to reliably restrict the p type SiC layer from remaining on the side surface of the trench.

Abstract translation: 在制造SiC半导体器件的方法中，通过外延生长在沟槽中形成p型层，然后仅通过氢蚀刻留在沟槽的底部和端部，从而形成p型SiC层。 因此，可以不依赖于对角离子注入来形成p型SiC层。 由于不需要单独进行对角线离子注入，因此生产工艺由于转移到离子注入装置中而不太可能复杂，因此制造成本降低。 由于由于离子注入引起的缺陷而没有损坏，因此可以减少漏极泄漏并且可靠地限制p型SiC层残留在沟槽的侧表面上。

公开(公告)号：US20140159058A1

公开(公告)日：2014-06-12

申请号：US14235116

申请日：2012-08-10

Applicant: DENSO CORPORATION

Inventor： Yuichi Takeuchi

IPC: H01L29/808 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/063 ,  H01L21/0455 ,  H01L21/0475 ,  H01L21/8213 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1058 ,  H01L29/1066 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/8083

Abstract: In a silicon carbide semiconductor device, a trench penetrates a source region and a first gate region and reaches a drift layer. On an inner wall of the trench, a channel layer of a first conductivity-type is formed by epitaxial growth. On the channel layer, a second gate region of a second conductivity-type is formed. A first depressed portion is formed at an end portion of the trench to a position deeper than a thickness of the source region so as to remove the source region at the end portion of the trench. A corner portion of the first depressed portion is covered by a second conductivity-type layer.

Abstract translation: 在碳化硅半导体器件中，沟槽穿透源极区域和第一栅极区域并到达漂移层。 在沟槽的内壁上，通过外延生长形成第一导电类型的沟道层。 在沟道层上形成第二导电类型的第二栅极区域。 第一凹部形成在沟槽的端部至比源极区域的厚度更深的位置，从而去除沟槽端部的源极区域。 第一凹陷部分的角部被第二导电型层覆盖。