Levitated reticle-masking blade stage
    41.
    发明授权
    Levitated reticle-masking blade stage 有权
    悬浮的掩模掩模刀片阶段

    公开(公告)号:US07372548B2

    公开(公告)日:2008-05-13

    申请号:US11218620

    申请日:2005-09-06

    IPC分类号: G03B27/72 G03B27/62

    摘要: A method, apparatus, and system for controlling a reticle-masking blade in a photolithography system. A reticle-masking blade is supported with a reticle-masking blade carriage assembly. The reticle-masking blade carriage assembly is levitated at a position with respect to a reference frame and at an orientation with respect to the reference frame. Preferably, the reticle-masking blade carriage assembly is electromagnetically levitated. At least one of the position and the orientation of the reticle-masking blade carriage assembly is measured. At least one of the position and the orientation of the reticle-masking blade carriage assembly is controlled. Optionally, the reticle-masking blade carriage assembly is moved within a dimension within a range defined by the reference frame. The dimension can be two dimensions. The movement of the reticle-masking blade carriage assembly can be controlled.

    摘要翻译: 一种用于在光刻系统中控制掩模掩模刀片的方法,装置和系统。 掩模版掩模刀片由掩模版掩模刀片托架组件支撑。 掩模版掩模刀片托架组件相对于参考框架在相对于参考框架的取向处悬浮。 优选地,掩模掩模刮板滑架组件是电磁悬浮的。 测量掩模版掩模片滑架组件的位置和取向中的至少一个。 掩模版掩模刀片支架组件的位置和取向中的至少一个被控制。 可选地,掩模版掩模刮板滑架组件在由参考框限定的范围内的尺寸内移动。 尺寸可以是两个维度。 可以控制掩模掩模刮板托架组件的运动。

    Drive for reticle-masking blade stage
    42.
    发明授权
    Drive for reticle-masking blade stage 有权
    驱动掩模掩模刀片舞台

    公开(公告)号:US07359037B2

    公开(公告)日:2008-04-15

    申请号:US11128315

    申请日:2005-05-13

    IPC分类号: G03B27/72 G03B27/62

    摘要: A method, apparatus, and system for controlling a reticle-masking blade in a photolithography system. A reticle-masking blade is supported with a reticle-masking blade carriage assembly. The reticle-masking blade carriage assembly is levitated at a position with respect to a reference frame and at an orientation with respect to the reference frame. Preferably, the reticle-masking blade carriage assembly is electromagnetically levitated. At least one of the position and the orientation of the reticle-masking blade carriage assembly is measured. At least one of the position and the orientation of the reticle-masking blade carriage assembly is controlled. Optionally, the reticle-masking blade carriage assembly is moved within a dimension within a range defined by the reference frame. The dimension can be two dimensions. The movement of the reticle-masking blade carriage assembly can be controlled.

    摘要翻译: 一种用于在光刻系统中控制掩模掩模刀片的方法,装置和系统。 掩模版掩模刀片由掩模版掩模刀片托架组件支撑。 掩模版掩模刀片托架组件相对于参考框架在相对于参考框架的取向处悬浮。 优选地,掩模掩模刮板滑架组件是电磁悬浮的。 测量掩模版掩模片滑架组件的位置和取向中的至少一个。 掩模版掩模刀片支架组件的位置和取向中的至少一个被控制。 可选地,掩模版掩模刮板滑架组件在由参考框限定的范围内的尺寸内移动。 尺寸可以是两个维度。 可以控制掩模掩模刮板托架组件的运动。

    Wafer handling method for use in lithography patterning
    43.
    发明授权
    Wafer handling method for use in lithography patterning 有权
    用于光刻图案的晶片处理方法

    公开(公告)号:US07298459B2

    公开(公告)日:2007-11-20

    申请号:US11182192

    申请日:2005-07-15

    IPC分类号: G03B27/32 G03B27/58

    摘要: A method utilizing a lithography system comprises a lithography patterning chamber, a wafer exchange chamber separated from the lithography patterning chamber by a first gate valve, and at least one alignment load-lock separated from the wafer exchange chamber by a second gate valve. The alignment load-lock includes an alignment stage that aligns a wafer during pump-down. The alignment load-lock can be uni-directional or bi-directional. The lithography system can include one or multiple alignment load-locks.

    摘要翻译: 使用光刻系统的方法包括光刻图案化室,通过第一闸阀与光刻图案化室分离的晶片交换室以及通过第二闸阀与晶片交换室分离的至少一个对准负载锁定。 对准负载锁定包括在抽空期间对准晶片的对准级。 对齐负载锁定可以是单向的或双向的。 光刻系统可以包括一个或多个对准加载锁。

    Active faceted mirror system for lithography

    公开(公告)号:US20060103908A1

    公开(公告)日:2006-05-18

    申请号:US10986076

    申请日:2004-11-12

    IPC分类号: G02B26/00

    摘要: An active faceted mirror system is disclosed. The active faceted mirror system includes a set of active facet mirror devices, a base plate and a set of pins for mounting the active facet mirror devices to the base plate. Each of the active facet mirror devices includes a mirror substrate with a reflective surface and a bearing hole on the reverse side for mounting. Additionally, each of the active facet mirror devices includes at least three actuator targets located on the back side of the mirror substrate, a jewel bearing and a flexure for supporting the mirror substrate. The base plate includes a series of bearing holes for mounting the active facet mirror devices and at least three actuators for each of the active facet mirror devices. A set of facet controllers located on the base plate can be used to control the positioning of the active facet mirror devices to produce a desired illumination effect.

    Method for recycling gases used in a lithography tool
    46.
    发明申请
    Method for recycling gases used in a lithography tool 有权
    在光刻工具中使用的再循环气体的方法

    公开(公告)号:US20050169767A1

    公开(公告)日:2005-08-04

    申请号:US11087639

    申请日:2005-03-24

    申请人: Stephen Roux

    发明人: Stephen Roux

    摘要: A system and method are used to isolate a first gas from a second gas using a third gas. A first chamber includes an element that emits light based on a first gas. A second chamber uses the emitted light to perform a process and includes the second gas. A gaslock that couples the first chamber to the second chamber. A gas source supplies a third gas between the first and the second gas in the gaslock, such that the first gas is isolated from the second gas in the gaslock. The first and third gas can be pumped from the first chamber and separated from one another, such that the first gas can be recycled for reuse to form the emitting light.

    摘要翻译: 使用系统和方法使用第三气体将第一气体与第二气体隔离。 第一室包括基于第一气体发光的元件。 第二室使用发射的光进行处理并且包括第二气体。 将第一室耦合到第二室的气闸。 气体源在气闸中的第一和第二气体之间提供第三气体,使得第一气体与气闸中的第二气体隔离。 第一和第三气体可以从第一室泵送并彼此分离,使得第一气体可以被再循环以重新使用以形成发射光。

    System for recycling gases used in a lithography tool
    47.
    发明授权
    System for recycling gases used in a lithography tool 有权
    用于光刻工具中回收气体的系统

    公开(公告)号:US06894293B2

    公开(公告)日:2005-05-17

    申请号:US10770476

    申请日:2004-02-04

    申请人: Stephen Roux

    发明人: Stephen Roux

    IPC分类号: G03F7/20 H01L21/027 H01J61/12

    摘要: A system and method are used to isolate a first gas from a second gas using a third gas. A first chamber includes an element that emits light based on a first gas. A second chamber uses the emitted light to perform a process and includes the second gas. A gaslock that couples the first chamber to the second chamber. A gas source supplies a third gas between the first and the second gas in the gaslock, such that the first gas is isolated from the second gas in the gaslock. The first and third gas can be pumped from the first chamber and separated from one another, such that the first gas can be recycled for reuse to form the emitting light.

    摘要翻译: 使用系统和方法使用第三气体将第一气体与第二气体隔离。 第一室包括基于第一气体发光的元件。 第二室使用发射的光进行处理并且包括第二气体。 将第一室耦合到第二室的气闸。 气体源在气闸中的第一和第二气体之间提供第三气体,使得第一气体与气闸中的第二气体隔离。 第一和第三气体可以从第一室泵送并彼此分离,使得第一气体可以被再循环以重新使用以形成发射光。

    Reticle barrier system for extreme ultra-violet lithography
    48.
    发明申请
    Reticle barrier system for extreme ultra-violet lithography 失效
    用于极紫外光刻的掩模版屏障系统

    公开(公告)号:US20050026045A1

    公开(公告)日:2005-02-03

    申请号:US10628326

    申请日:2003-07-29

    摘要: The present invention is directed to a reticle barrier system that prevents contaminants from landing on a mask within lithographic systems using extreme ultra violet light. In particular, a reticle barrier system is provided that consists of a mask barrier and a set of contact barriers. The mask barrier surrounds a mask formed on a reticle, while the contact barriers are affixed between the mask and contact spots on a reticle. The barriers have a height relative to the mask, and different geometries are provided. Collectively, the mask and contact barriers reduce the number of contaminants landing on a mask surface without the use of a pellicle. In an alternate embodiment, the reticle barrier system includes only a mask barrier. Similarly, in another alternate embodiment, the reticle barrier system includes only contact barriers.

    摘要翻译: 本发明涉及一种掩模版屏障系统,其防止污染物在使用极紫外光的光刻系统内的掩模上着落。 特别地,提供了由掩模屏障和一组接触屏障组成的掩模版屏障系统。 掩模屏障围绕形成在掩模版上的掩模,而接触屏障固定在掩模和掩模版上的接触点之间。 障碍物具有相对于掩模的高度,并且提供不同的几何形状。 总而言之,面罩和接触屏障减少了在不使用防护薄膜的情况下降落在掩模表面上的污染物的数量。 在替代实施例中,掩模版屏障系统仅包括掩模屏障。 类似地,在另一替代实施例中,掩模版屏障系统仅包括接触屏障。

    Reticle focus measurement system using multiple interferometric beams

    公开(公告)号:US06850330B2

    公开(公告)日:2005-02-01

    申请号:US10417257

    申请日:2003-04-17

    IPC分类号: G03F7/20 G03F9/00 G01B9/02

    摘要: A first set of interferometric measuring beams is used to determine a location of a patterned surface of a reticle and a reticle focus plane for a reticle that is back clamped to a reticle stage. A second set of interferometric measuring beams is used to determine a map of locations of the reticle stage during scanning in a Y direction. The two sets of interferometric measuring beams are correlated to relate the reticle focal plane to the map of the reticle stage. The information is used to control the reticle stage during exposure of a pattern on the patterned surface of the reticle onto a wafer.