Microelectromechanical tunneling gyroscope and an assembly for making a microelectromechanical tunneling gyroscope therefrom
    41.
    发明授权
    Microelectromechanical tunneling gyroscope and an assembly for making a microelectromechanical tunneling gyroscope therefrom 失效
    微机电隧道陀螺仪和用于从其制造微机电隧道陀螺仪的组件

    公开(公告)号:US06841838B2

    公开(公告)日:2005-01-11

    申请号:US10223874

    申请日:2002-08-19

    摘要: A method of making a micro electromechanical gyroscope. A cantilevered beam structure, first portions of side drive electrodes and a mating structure are defined on a first substrate or wafer; and at least one contact structure, second portions of the side drive electrodes and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer and the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and also between the first and second portions of the side drive electrodes to cause a bond to occur therebetween. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.

    摘要翻译: 制造微机电陀螺仪的方法。 悬臂梁结构,侧驱动电极的第一部分和配合结构限定在第一基板或晶片上; 并且至少一个接触结构,侧驱动电极的第二部分和配合结构限定在第二衬底或晶片上,第二衬底或晶片上的配合结构与第一衬底上的配合结构互补形状,或 并且所述侧驱动电极的第一和第二部分彼此互补形状。 在至少一个配合结构和侧驱动电极的一个或第一和第二部分中提供粘结层,优选共晶粘结层。 第一基板的配合结构被移动成与第二基板或晶片的配合结构面对面的关系。 在两个基板之间施加压力,使得在接合或共晶层处的两个配合结构之间以及侧驱动电极的第一和第二部分之间发生接合,从而在它们之间发生接合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。 键优选为共晶键。

    Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same
    42.
    发明授权
    Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same 失效
    单晶,双晶片,隧道传感器或具有硅绝缘体衬底的开关及其制造方法

    公开(公告)号:US06580138B1

    公开(公告)日:2003-06-17

    申请号:US09629682

    申请日:2000-08-01

    IPC分类号: H01L2982

    摘要: A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on an etch stop layer on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer and the etch stop layer are removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

    摘要翻译: 一种制造微机电开关或隧道传感器的方法。 在第一衬底或晶片上的蚀刻停止层上限定悬臂梁结构和配合结构; 并且在第二衬底或晶片上限定至少一个接触结构和配合结构,所述第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。 在至少一个配合结构上提供粘合层,优选共晶粘合层。 第一基板的配合结构被移动成与第二基板或晶片的配合结构面对面的关系。 在两个基板之间施加压力,以便在接合或共晶层处在两个配合结构之间发生结合。 然后去除第一衬底或晶片和蚀刻停止层以释放悬臂梁结构以相对于第二衬底或晶片移动。

    Single crystal tunneling sensor or switch with silicon beam structure and a method of making same
    43.
    发明授权
    Single crystal tunneling sensor or switch with silicon beam structure and a method of making same 失效
    单晶隧道传感器或具有硅梁结构的开关及其制造方法

    公开(公告)号:US06563184B1

    公开(公告)日:2003-05-13

    申请号:US09629680

    申请日:2000-08-01

    IPC分类号: H01L2982

    CPC分类号: H01H1/0036 H01H59/0009

    摘要: A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. At least one of the mating structures includes a protrusion extending from a major surface of at least one of said substrates. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

    摘要翻译: 一种制造微机电开关或隧道传感器的方法。 在第一基板或晶片上限定悬臂梁结构和配合结构; 并且在第二衬底或晶片上限定至少一个接触结构和配合结构,所述第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。 配合结构中的至少一个包括从至少一个所述基底的主表面延伸的突起。 在至少一个配合结构上提供粘合层,优选共晶粘合层。 第一基板的配合结构被移动成与第二基板或晶片的配合结构面对面的关系。 在两个基板之间施加压力,以便在接合或共晶层处在两个配合结构之间发生结合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。

    Method of manufacturing a dual wafer tunneling gyroscope
    44.
    发明授权
    Method of manufacturing a dual wafer tunneling gyroscope 失效
    双晶硅隧道陀螺仪的制造方法

    公开(公告)号:US06555404B1

    公开(公告)日:2003-04-29

    申请号:US09629679

    申请日:2000-08-01

    IPC分类号: H01L2100

    摘要: A method of making a micro electromechanical gyroscope. A cantilevered beam structure, first portions of side drive electrodes and a mating structure are defined on a first substrate or wafer; and at least one contact structure, second portions of the side drive electrodes and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer and the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and also between the first and second portions of the side drive electrodes to cause a bond to occur therebetween. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.

    摘要翻译: 制造微机电陀螺仪的方法。 悬臂梁结构,侧驱动电极的第一部分和配合结构限定在第一基板或晶片上; 并且至少一个接触结构,侧驱动电极的第二部分和配合结构限定在第二衬底或晶片上,第二衬底或晶片上的配合结构与第一衬底上的配合结构互补形状,或 并且所述侧驱动电极的第一和第二部分彼此互补形状。 在至少一个配合结构和侧驱动电极的一个或第一和第二部分中提供粘结层,优选共晶粘结层。 第一基板的配合结构被移动成与第二基板或晶片的配合结构面对面的关系。 在两个基板之间施加压力,使得在接合或共晶层处的两个配合结构之间以及侧驱动电极的第一和第二部分之间发生接合,从而在它们之间发生接合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。 键优选为共晶键。