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    Memory devices and methods of operating the same
    41.
    发明授权
    Memory devices and methods of operating the same 有权
    内存设备及操作方法

    公开(公告)号：US08456900B2

    公开(公告)日：2013-06-04

    申请号：US12926443

    申请日：2010-11-18

    Applicant: Myoung-jae Lee ,  Dong-soo Lee ,  Chang-bum Lee ,  Seung-ryul Lee

    Inventor： Myoung-jae Lee ,  Dong-soo Lee ,  Chang-bum Lee ,  Seung-ryul Lee

    IPC: G11C11/00

    CPC classification number: G11C13/0007 ,  G11C13/003 ,  G11C2013/0073 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/72 ,  G11C2213/73 ,  G11C2213/74 ,  G11C2213/76 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

    Abstract: A memory device includes a memory cell. The memory cell includes: a bipolar memory element and a bidirectional switching element. The bidirectional switching element is connected to ends of the bipolar memory element, and has a bidirectional switching characteristic. The bidirectional switching element includes: a first switching element and a second switching element. The first switching element is connected to a first end of the bipolar memory element and has a first switching direction. The second switching element is connected to a second end of the bipolar memory element and has a second switching direction. The second switching direction is opposite to the first switching direction.

    Abstract translation: 存储器件包括存储器单元。 存储单元包括：双极存储元件和双向开关元件。 双向开关元件连接到双极存储元件的端部，并且具有双向开关特性。 双向开关元件包括：第一开关元件和第二开关元件。 第一开关元件连接到双极存储元件的第一端并且具有第一开关方向。 第二开关元件连接到双极存储元件的第二端并具有第二开关方向。 第二切换方向与第一切换方向相反。

    BURST-MODE OPTICAL SIGNAL RECEIVER
    47.
    发明申请
    BURST-MODE OPTICAL SIGNAL RECEIVER 审中-公开
    BURST模式光信号接收器

    公开(公告)号：US20110129235A1

    公开(公告)日：2011-06-02

    申请号：US13056216

    申请日：2009-04-23

    Applicant: Quen Le ,  Jong-deog Kim ,  Mun-seob Lee ,  Dong-soo Lee

    Inventor： Quen Le ,  Jong-deog Kim ,  Mun-seob Lee ,  Dong-soo Lee

    IPC: H04B10/06

    CPC classification number: H04B10/693

    Abstract: A burst-mode optical receiver is provided. The burst-mode optical receiver includes a preamplifier, a post-amplifier integrated into one body together with the preamplifier, and an operation controller for controlling operation of the preamplifier and the post-amplifier using an external reset signal input from a single external reset input terminal. As a result, it is possible to implement a burst-mode receiver for a gigabit-capable passive optical network (GPON) in which a preamplifier unit and a post-amplifier unit are integrated.

    Abstract translation: 提供突发模式光接收机。 突发模式光接收机包括前置放大器，与前置放大器一体地集成在一个主体中的后置放大器以及用于使用从单个外部复位输入输入的外部复位信号来控制前置放大器和后置放大器的操作的操作控制器 终奌站。 结果，可以实现其中集成了前置放大器单元和后置放大器单元的千兆位无源光网络（GPON）的突发模式接收机。

    Resistive random access memory device and memory array including the same
    48.
    发明申请
    Resistive random access memory device and memory array including the same 有权
    电阻随机存取存储器件和包含相同的存储器阵列

    公开(公告)号：US20110049464A1

    公开(公告)日：2011-03-03

    申请号：US12805430

    申请日：2010-07-30

    Applicant: Chang-bum Lee ,  Dong-soo Lee ,  Chang-Jung Kim

    Inventor： Chang-bum Lee ,  Dong-soo Lee ,  Chang-Jung Kim

    IPC: H01L45/00

    CPC classification number: H01L45/04 ,  G11C13/0007 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146

    Abstract: A resistive random access memory (RRAM) includes a resistive memory layer of a transition metal oxide, such as Ni oxide, and is doped with a metal material. The RRAM may include at least one first electrode, a resistive memory layer on the at least one first electrode, the resistive memory layer including a Ni oxide layer doped with at least one element selected from a group consisting of Fe, Co, and Sn, and at least one second electrode on the resistive memory layer. The RRAM device may include a plurality of first electrodes and a plurality of second electrodes, and the resistive memory layer may be between the plurality of first electrodes and the plurality of second electrodes.

    Abstract translation: 电阻随机存取存储器（RRAM）包括诸如Ni氧化物的过渡金属氧化物的电阻性存储层，并且掺杂有金属材料。 RRAM可以包括至少一个第一电极，至少一个第一电极上的电阻性存储器层，电阻性存储层包括掺杂有选自Fe，Co和Sn中的至少一种元素的Ni氧化物层， 以及电阻存储器层上的至少一个第二电极。 RRAM器件可以包括多个第一电极和多个第二电极，并且电阻性存储器层可以在多个第一电极和多个第二电极之间。

    METHOD FOR FILTERING OF ABNORMAL ONT WITH SAME SERIAL NUMBER IN A GPON SYSTEM
    49.
    发明申请
    METHOD FOR FILTERING OF ABNORMAL ONT WITH SAME SERIAL NUMBER IN A GPON SYSTEM 有权
    用于在GPON系统中过滤具有相同序列号的异常ONT的方法

    公开(公告)号：US20100272259A1

    公开(公告)日：2010-10-28

    申请号：US12747345

    申请日：2009-07-16

    Applicant: Kwang-ok Kim ,  Geun-yong Kim ,  Dong-soo Lee

    Inventor： Kwang-ok Kim ,  Geun-yong Kim ,  Dong-soo Lee

    IPC: H04K1/00 ,  H04L9/08

    CPC classification number: H04L9/32 ,  H04L9/0816 ,  H04L9/0825 ,  H04L63/0236 ,  H04L63/0442 ,  H04L63/061 ,  H04L63/0876 ,  H04L63/162 ,  H04Q11/0067

    Abstract: Disclosed is a method of registering only an authorized optical network terminal among a plurality of optical network terminals with the same serial number, in an optical line terminal, using a public key encryption algorithm, in a Gigabit Passive Optical Network (GPON). According to an exemplary aspect, a GPON system encrypts a physical layer OAM message transmitted/received for serial number registration of an optical network terminal, using a key distributed according to a public key encryption algorithm, and authenticates registration of the optical network terminal using the encrypted physical layer OAM message. Accordingly, it is possible to securely authenticate registration of an authorized optical network terminal and block registration of unauthorized optical network terminals.

    Abstract translation: 公开了一种在千兆无源光网络（GPON）中在光线路终端中使用公开密钥加密算法在仅具有相同序列号的多个光网络终端中注册授权的光网络终端的方法。 根据示例性方面，GPON系统使用根据公共密钥加密算法分发的密钥来加密发送/接收的用于光网络终端的序列号登记的物理层OAM消息，并且使用所述光网络终端对所述光网络终端的注册进行认证 加密物理层OAM消息。 因此，可以安全地认证授权的光网络终端的注册并阻止未经授权的光网络终端的登记。

    Method and apparatus for dynamically changing burst length using direct memory access control
    50.
    发明授权
    Method and apparatus for dynamically changing burst length using direct memory access control 有权
    使用直接存储器访问控制来动态地改变突发长度的方法和装置

    公开(公告)号：US07779174B2

    公开(公告)日：2010-08-17

    申请号：US11755021

    申请日：2007-05-30

    Applicant: Dong-soo Lee ,  Byong-woong Park

    Inventor： Dong-soo Lee ,  Byong-woong Park

    IPC: G06F13/00 ,  G06F13/28 ,  G06F15/167

    CPC classification number: G06F13/28

    Abstract: A direct memory access controlling method includes checking a length value of remaining data corresponding to data remaining after transmission of the data stored in the source memory to the destination memory, and a currently set burst length value, comparing the length value of the remaining data with the currently set burst length value based on a result of the checking, and selectively changing the currently set burst length value based on a result of the comparing, and transmitting data to the destination memory.

    Abstract translation: 一种直接存储器访问控制方法，包括检查对应于在存储在源存储器中的数据发送到目的地存储器之后剩余的剩余数据的长度值，以及当前设置的突发长度值，将剩余数据的长度值与 基于检查结果的当前设置的突发长度值，并且基于比较的结果选择性地改变当前设置的突发长度值，并将数据发送到目的地存储器。

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