公开(公告)号：US09236397B2

公开(公告)日：2016-01-12

申请号：US14172365

申请日：2014-02-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Judson R. Holt ,  Jinghong Li ,  Sanjay Mehta ,  Alexander Reznicek ,  Dominic J. Schepis

IPC: H01L27/12 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/16 ,  H01L21/84 ,  H01L29/66 ,  H01L21/02 ,  H01L21/265

CPC classification number: H01L27/1211 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/26506 ,  H01L21/31155 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L29/16 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795

Abstract: A composite spacer structure is formed on vertical sidewalls of a gate structure that is formed straddling a semiconductor fin. In one embodiment, the composite spacer structure includes an inner low-k dielectric material portion and an outer nitride material portion.

Abstract translation: 在跨越半导体鳍片的栅极结构的垂直侧壁上形成复合间隔物结构。 在一个实施例中，复合间隔物结构包括内部低k电介质材料部分和外部氮化物材料部分。

公开(公告)号：US20130175547A1

公开(公告)日：2013-07-11

申请号：US13783526

申请日：2013-03-04

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc.

Inventor： Kevin K. Chan ,  Abhishek Dube ,  Eric C. Harley ,  Judson R. Holt ,  Viorel C. Ontalus ,  Kathryn T. Schonenberg ,  Matthew W. Stoker ,  Keith H. Tabakman ,  Linda R. Black

IPC: H01L29/78

CPC classification number: H01L29/7848 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/84 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78618 ,  H01L29/78684

Abstract: A method for forming a field effect transistor device includes forming a gate stack portion on a substrate, forming a spacer portion on the gates stack portion and a portion of the substrate, removing an exposed portion of the substrate, epitaxially growing a first silicon material on the exposed portion of the substrate, removing a portion of the epitaxially grown first silicon material to expose a second portion of the substrate, and epitaxially growing a second silicon material on the exposed second portion of the substrate and the first silicon material.

Abstract translation: 一种用于形成场效应晶体管器件的方法，包括：在衬底上形成栅极叠层部分，在栅堆叠部分和衬底的一部分上形成间隔部分，去除衬底的暴露部分，将第一硅材料外延生长 衬底的暴露部分，去除外延生长的第一硅材料的一部分以暴露衬底的第二部分，以及在衬底的暴露的第二部分和第一硅材料上外延生长第二硅材料。