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公开(公告)号：US20090057654A1
公开(公告)日：2009-03-05
申请号：US12197710
申请日：2008-08-25
CPC分类号： H01L29/66984 , B82Y25/00 , H01F10/3268 , H01L43/08
摘要： A spin FET of an aspect of the present invention includes source/drain regions, a channel region between the source/drain regions, and a gate electrode above the channel region. Each of the source/drain regions includes a stack structure which is comprised of a low work function material and a ferromagnet. The low work function material is a non-oxide which is comprised of one of Mg, K, Ca and Sc, or an alloy which includes the non-oxide of 50 at % or more.
摘要翻译： 本发明的一个自旋FET包括源极/漏极区域，源极/漏极区域之间的沟道区域和沟道区域上方的栅极电极。 源极/漏极区域中的每一个包括由低功函数材料和铁磁体组成的堆叠结构。 低功函数材料是由Mg，K，Ca和Sc中的一种或包含50原子％以上的非氧化物的合金构成的非氧化物。
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公开(公告)号：US08294489B2
公开(公告)日：2012-10-23
申请号：US12404606
申请日：2009-03-16
IPC分类号： H03K19/177
CPC分类号： H03K19/1776 , G11C13/0002 , H03K19/17764 , H03K19/1778 , H03K19/17784 , H03K19/18
摘要： A programmable logic circuit includes: an input circuit configured to receive a plurality of input signals; and a programmable cell array including a plurality of unit programmable cells arranged in a matrix form, each of the unit programmable cells including a first memory circuit of resistance change type including a first transistor and a second memory circuit of resistance change type including a second transistor, the first and second memory circuits connected in parallel, each gate of the first transistors on same row respectively receiving one input signal, each gate of the second transistors on same row receiving an inverted signal of the one input signal, output terminals of the first and second memory circuits on same column being connected to a common output line.
摘要翻译： 可编程逻辑电路包括：输入电路，被配置为接收多个输入信号; 以及包括以矩阵形式布置的多个单元可编程单元的可编程单元阵列，每个单元可编程单元包括电阻改变型的第一存储器电路，包括第一晶体管和包括第二晶体管的电阻变化型的第二存储器电路 并联连接的第一和第二存储器电路，同一行上的第一晶体管的每个栅极分别接收一个输入信号，同一行上的第二晶体管的每个栅极接收一个输入信号的反相信号，第一个输出端的输出端 并且同一列上的第二存储器电路连接到公共输出线。
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公开(公告)号：US20090244960A1
公开(公告)日：2009-10-01
申请号：US12481726
申请日：2009-06-10
IPC分类号： G11C11/15
CPC分类号： G11C11/15 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01L43/08
摘要： It is made possible to provide a highly reliable magnetoresistive effect element and a magnetic memory that operate with low power consumption and current writing and without element destruction. The magnetoresistive effect element includes a first magnetization pinned layer comprising at least one magnetic layer and in which a magnetization direction is pinned, a magnetization free layer in which a magnetization direction is changeable, a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer, a non-magnetic metal layer provided on a first region in an opposite surface of the magnetization free layer from the tunnel barrier layer, a dielectric layer provided on a second region other than the first region in the opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided to cover opposite surfaces of the non-magnetic metal layer and the dielectric layer from the magnetization free layer.
摘要翻译： 可以提供高可靠性的磁阻效应元件和磁存储器，其以低功耗和电流写入操作，并且不会损坏元件。 磁阻效应元件包括包含至少一个磁性层并且其中磁化方向被钉扎的第一磁化固定层，其中磁化方向可变的磁化自由层，设置在第一磁化固定层和第二磁化层之间的隧道势垒层 磁化自由层，非磁性金属层，设置在磁化自由层的与隧道势垒层相反的表面的第一区域上，介电层设置在第二区域之外，该第二区域与磁化相反的表面中的第一区域 自由层从隧道势垒层; 以及第二磁化固定层，其设置成覆盖非磁性金属层和电介质层与磁化自由层的相对表面。
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公开(公告)号：US07248497B2
公开(公告)日：2007-07-24
申请号：US11626285
申请日：2007-01-23
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/115 , H01L29/66984 , H01L29/7881
摘要： An spin-injection FET includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.
摘要翻译： 自旋注入FET包括其磁化方向固定的第一铁磁体，其磁化方向由自旋注入电流改变的第二铁磁体，形成在第一和第二铁磁体之间的通道上的栅极，第一铁磁体， 驱动器/沉降器，其控制自旋喷射电流的方向以确定第二铁磁体的磁化方向，自旋喷射电流通过通道，辅助电流通过的布线，辅助电流产生磁 第二铁磁体的磁化容易轴方向的第二驱动器/沉降片，以及控制通过导线的辅助电流的方向的第二驱动器/沉降片。
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公开(公告)号：US20070115716A1
公开(公告)日：2007-05-24
申请号：US11626285
申请日：2007-01-23
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/115 , H01L29/66984 , H01L29/7881
摘要： An spin-injection FET according to an embodiment of the invention includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.
摘要翻译： 根据本发明的实施例的自旋注入FET包括其磁化方向固定的第一铁磁体，其磁化方向由自旋注入电流改变的第二铁磁体，形成在第一 和第二铁磁体，第一驱动器/沉降器，其控制自旋喷射电流的方向以确定第二铁磁体的磁化方向，自旋喷射电流通过通道，辅助电流通过的布线 辅助电流产生第二铁磁体的磁化容易轴方向的磁场，以及控制通过导线的辅助电流的方向的第二驱动器/沉降片。
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公开(公告)号：US07200037B2
公开(公告)日：2007-04-03
申请号：US11255101
申请日：2005-10-21
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/115 , H01L29/66984 , H01L29/7881
摘要： An spin-injection FET includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.
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公开(公告)号：US20070007609A1
公开(公告)日：2007-01-11
申请号：US11368383
申请日：2006-03-07
CPC分类号： G11C11/15 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01L43/08
摘要： It is made possible to provide a highly reliable magnetoresistive effect element and a magnetic memory that operate with low power consumption and current writing and without element destruction. The magnetoresistive effect element includes a first magnetization pinned layer comprising at least one magnetic layer and in which a magnetization direction is pinned, a magnetization free layer in which a magnetization direction is changeable, a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer, a non-magnetic metal layer provided on a first region in an opposite surface of the magnetization free layer from the tunnel barrier layer, a dielectric layer provided on a second region other than the first region in the opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided to cover opposite surfaces of the non-magnetic metal layer and the dielectric layer from the magnetization free layer.
摘要翻译： 可以提供高可靠性的磁阻效应元件和磁存储器，其以低功耗和电流写入操作，并且不会损坏元件。 磁阻效应元件包括包含至少一个磁性层并且其中磁化方向被钉扎的第一磁化固定层，其中磁化方向可变的磁化自由层，设置在第一磁化固定层和第二磁化层之间的隧道势垒层 磁化自由层，非磁性金属层，设置在磁化自由层的与隧道势垒层相反的表面的第一区域上，介电层设置在第二区域之外，该第二区域与磁化相反的表面中的第一区域 自由层从隧道势垒层; 以及第二磁化固定层，其设置成覆盖非磁性金属层和电介质层与磁化自由层的相对表面。
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公开(公告)号：US08310862B2
公开(公告)日：2012-11-13
申请号：US12481726
申请日：2009-06-10
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01L43/08
摘要： It is made possible to provide a highly reliable magnetoresistive effect element and a magnetic memory that operate with low power consumption and current writing and without element destruction. The magnetoresistive effect element includes a first magnetization pinned layer comprising at least one magnetic layer and in which a magnetization direction is pinned, a magnetization free layer in which a magnetization direction is changeable, a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer, a non-magnetic metal layer provided on a first region in an opposite surface of the magnetization free layer from the tunnel barrier layer, a dielectric layer provided on a second region other than the first region in the opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided to cover opposite surfaces of the non-magnetic metal layer and the dielectric layer from the magnetization free layer.
摘要翻译： 可以提供高可靠性的磁阻效应元件和磁存储器，其以低功耗和电流写入操作，并且不会损坏元件。 磁阻效应元件包括包含至少一个磁性层并且其中磁化方向被钉扎的第一磁化固定层，其中磁化方向可变的磁化自由层，设置在第一磁化固定层和第二磁化层之间的隧道势垒层 磁化自由层，非磁性金属层，设置在磁化自由层的与隧道势垒层相反的表面的第一区域上，介电层设置在第二区域之外，该第二区域与磁化相反的表面中的第一区域 自由层从隧道势垒层; 以及第二磁化固定层，其设置成覆盖非磁性金属层和电介质层与磁化自由层的相对表面。
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公开(公告)号：US08217438B2
公开(公告)日：2012-07-10
申请号：US12851072
申请日：2010-08-05
IPC分类号： H01L29/82
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/66984
摘要： A spin memory includes a magneto-resistance element having a first ferromagnetic layer in which a magnetization direction is pinned, a second ferromagnetic layer in which a magnetization direction changes, and a first nonmagnetic layer between the first and second ferromagnetic layers, a lower electrode and an upper electrode extending in a direction between 45 degrees and 90 degrees relative to an axis of hard magnetization of the second ferromagnetic layer, and sandwiching the magneto-resistance element at one end in a longitudinal direction, a switching element connected to another end in a longitudinal direction of the lower electrode, and a bit line connected to another end in a longitudinal direction of the upper electrode, wherein writing is carried out by supplying spin-polarized electrons to the second ferromagnetic layer and applying a magnetic field from the lower electrode and the upper electrode to the second ferromagnetic layer.
摘要翻译： 自旋存储器包括磁阻元件，其具有其中磁化方向被钉扎的第一铁磁层，磁化方向改变的第二铁磁层和第一和第二铁磁层之间的第一非磁性层，下电极和 相对于第二铁磁层的硬磁化轴在45度和90度之间的方向延伸的上电极，并且在纵向方向的一端夹着磁阻元件，开关元件连接到另一端 下电极的纵向方向和与上电极的纵向方向上的另一端连接的位线，其中通过向第二铁磁层提供自旋极化电子并从下电极施加磁场来进行写入，以及 上电极到第二铁磁层。
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公开(公告)号：US08134193B2
公开(公告)日：2012-03-13
申请号：US13170650
申请日：2011-06-28
IPC分类号： H01L29/76
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译： 可以减少自旋注入写入所需的电流。 磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。 当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。
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