摘要:
In a semiconductor circuit, a high frequency level detecting unit detects a level of a high frequency component adjusted with a first adjusting unit, and a first control unit controls a first gain of the adjusting unit according to the level of the high frequency component thus detected. Further, a low frequency level detecting unit detects a level of a low frequency component adjusted with a second adjusting unit. A second control unit controls a second gain according to the level of the high frequency component and the level of the low frequency component thus adjusted, so that a difference between the level of the high frequency component adjusted with the first adjusting unit and the level of the low frequency component adjusted with the second adjusting unit becomes smaller than a specific level determined in advance.
摘要:
A developer cartridge includes a developer roller, a support member and a first seal member. The developer roller has a rotational axis and a peripheral surface. The peripheral surface includes a center zone and an end zone at one end portion in an axial direction. The support member supports the developer roller to be rotatable about the rotational axis. The support member has an opposing surface opposed to the end zone. A protrusion protrudes from the opposing surface, and extends in a direction crossing with the axial direction. The first seal member is disposed between the end zone and the opposing surface in order to prevent developer from leaking out of a space formed between the end zone and the opposing surface.
摘要:
A start-up circuit includes a power supply node which receives a power supply voltage, a ground node which receives a ground voltage, a first node, a first capacitor which is coupled between the first node and the ground node, a supply circuit which is coupled between the power supply node and the first node, and which supplies an electrical charge from the power supply node to the first capacitor, a discharge circuit which is coupled between the first node and the ground node, and which discharges an electrical charge stored in the first capacitor to the ground node, and an output circuit which is connected to the first node, and which outputs a start-up signal when a voltage level of the first node becomes higher than a set voltage level.
摘要:
A booster circuit uses a source voltage to generate a boosted voltage that is higher than the source voltage. The booster circuit has two capacitors. The two capacitors are alternately charged and discharged in response to a signal applied to an input terminal. The first capacitor is discharged to boost a voltage at the boosting node, whereas the second capacitor is discharged to boost the voltage at an output terminal. Further, the booster circuit includes a control circuit. When the voltage at the input terminal changes from an “H” level to an “L” level, the control circuit supplies a voltage for discharging the first capacitor to the first capacitor after the second capacitor has been brought into a charging state. Since the voltage at the output terminal is reduced by the charging of the second capacitor, a transistor is deactivated in response to the voltage at the output terminal. As a result, the boosting node and the source voltage can be prevented from being coupled by the transistor. The voltage at the boosting node is boosted by the discharge of the first capacitor, and the output terminal and the source voltage are coupled by a transistor that is activated in response to the boosted voltage at the boosting node. It is thus possible to increase the voltage at the output terminal to the source voltage VCC.
摘要:
A semiconductor device includes plural fuse wiring paths which extend substantially parallel to each other in a first direction, each of the fuse wiring paths having a fuse element. A normal column line extends in a second direction substantially perpendicular to the first direction, the normal column line corresponding to a normal memory cell which stores data. The semiconductor memory device further includes a redundant column line extending in the second direction, the redundant column line corresponding to a redundant memory cell which stores data. A logic circuit receives respective signals on the plural fuse wiring paths, and outputs a selection signal according to these signals. The semiconductor device also includes a switching circuit coupled between the logic circuit and the normal and redundant column lines, which receives an address signal and the selection signal, and which selectively transfers the address signal to the normal column line or the redundant column line in response to the selection signal.
摘要:
There is provided a semiconductor memory device 100 comprising memory cell blocks 20-1 to 20-n, decoder circuits 10-1 to 10-n that carry out the redundant operation provided so as to correspond to each memory cell block, a Roll Call signal transmission circuit 110 which detect if the redundant function is in operation; wherein each decoder circuit outputs a decoder signal FCi at low level to the Roll Call signal transmission circuit when the redundant function is in operation, but outputs a decoder signal at high level when the redundant function is not in operation, and wherein the Roll Call signal transmission circuit outputs a judgment signal at high level when all the decoder signals are at high level, but outputs a low level judgment signal when any of the decoder signals is at low level.
摘要:
A booster circuit uses a source voltage to generate a boosted voltage that is higher than the source voltage. The booster circuit has two capacitors. The two capacitors are alternately charged and discharged in response to a signal applied to an input terminal. The first capacitor is discharged to boost the voltage at the boosting node, whereas the second capacitor is discharged to boost the voltage at an output terminal. Further, the booster circuit includes a control circuit. When the voltage at the input terminal changes from an "H" level to an "L" level, the control circuit supplies a voltage for discharging the first capacitor to the first capacitor after the second capacitor has been brought into a charging state. Since the voltage at the output terminal is reduced by the charging of the second capacitor, a transistor is deactivated in response to the voltage at the output terminal. As a result, the boosting node and the source voltage can be prevented from being coupled by the transistor. The voltage at the boosting node is boosted by the discharge of the first capacitor, and the output terminal and the source voltage are coupled by a transistor that is activated in response to the boosted voltage at the boosting node. It is thus possible to increase the voltage at the output terminal to the source voltage V.sub.CC.
摘要:
A redundant semiconductor memory capable of functioning normally on the whole even if two column (or row) lines do not function normally. The semiconductor memory includes primary and secondary selection circuits, primary and secondary switchover circuits, and (N+2) memory cell groups. The primary switchover circuit receives a decoded address signal of N bits for selecting one memory sell group, and outputs to the secondary switchover circuit a signal of (N+1) bits which is generated by inserting a bit into a position of the inputted decoded address signal specified by the primary selection circuit. The secondary switchover circuit outputs to the memory cell groups a signal of (N+2) bits which is generated by inserting a bit into a position of the inputted signal specified by the secondary selection circuit.
摘要:
A data reading circuit of the present invention comprises a pair of data buses supplied with complementary potentials respectively, a first reference voltage source having a first potential, a second reference voltage source having a second potential, a first switch connected to the first reference voltage source and the pair of data buses and responsive to a first clamping signal thereby to electrically connect the first reference voltage source to the pair of data buses, and a second switch connected to the second reference voltage source and the pair of data buses and responsive to a second clamping signal thereby to electrically connect the second reference voltage source to the pair of data buses.
摘要:
An image forming apparatus includes a charging member for charging a surface of a photosensitive member to a first potential, an exposing member for partially exposing the charged surface of the photosensitive member such that a potential of the exposed portions becomes a second potential smaller than the first potential, a developer carrier for feeding developer onto the photosensitive member, a discharging-beam member for irradiating a discharging beam onto the photosensitive member having a developer image, and a control device configured to: control a developing bias to become a third potential larger than the second potential and smaller than the first potential; and control a discharging bias such that a potential of portions on the photosensitive member where the developer image has not been formed becomes a fourth potential not smaller than the third potential and smaller than the first potential.