Chemical mechanical polishing pad and chemical mechanical polishing method
    41.
    发明申请
    Chemical mechanical polishing pad and chemical mechanical polishing method 有权
    化学机械抛光垫和化学机械抛光方法

    公开(公告)号:US20050014376A1

    公开(公告)日:2005-01-20

    申请号:US10892096

    申请日:2004-07-16

    CPC分类号: B24B37/205 B24B37/013

    摘要: A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 μm or less.

    摘要翻译: 化学机械抛光垫。 垫包含分散在水不溶性基质材料中的水不溶性基质和水溶性颗粒,并且在与抛光表面相对的一侧上具有抛光表面和非抛光表面。 垫具有从抛光表面与非抛光表面光学连通的透光区域。 透光区域的非抛光表面的表面粗糙度(Ra)为10μm以下。

    Polishing pad for semiconductor wafer, polishing multilayered body for semiconductor wafer having same, and method for polishing semiconductor wafer
    42.
    发明授权
    Polishing pad for semiconductor wafer, polishing multilayered body for semiconductor wafer having same, and method for polishing semiconductor wafer 有权
    用于半导体晶片的抛光垫,用于其半导体晶片的抛光多层体,以及用于研磨半导体晶片的方法

    公开(公告)号:US07323415B2

    公开(公告)日:2008-01-29

    申请号:US10529742

    申请日:2004-04-23

    IPC分类号: H01L21/302

    CPC分类号: B24B37/205

    摘要: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoints detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the present invention comprises a substrate 11 for a polishing pad provided with a through hole penetrating from surface to back, a light transmitting part 12 fitted in the through hole, the light transmitting part comprises a water-insoluble matrix material (1,2-polybutadiene) and a water-soluble particle (β-cyclodextrin) dispersed in the water-insoluble matrix material, and the water-soluble particle is less than 5% by volume based on 100% by volume of the total amount of the water-insoluble matrix material and the water-soluble particle. In addition, the laminated body for polishing of the present invention comprises a supporting layer on a backside of the polishing pad. These polishing pad and laminated body for polishing can comprise a fixing layer 13 on a backside.

    摘要翻译: 本发明的目的是提供一种用于半导体晶片的抛光垫和用于抛光其配备的半导体晶片的层叠体,其可以在不降低抛光性能的情况下进行光学终点检测以及半导体的抛光方法 晶圆使用它们。 本发明的抛光垫包括用于抛光垫的基板11,该抛光垫具有从表面向后穿透的通孔,安装在通孔中的透光部12,透光部包括水不溶性基质材料(1 ,2-聚丁二烯)和分散在水不溶性基质材料中的水溶性颗粒(β-环糊精),并且水溶性颗粒的体积百分比小于5体积% 水不溶性基质材料和水溶性颗粒。 另外,本发明的研磨用层叠体在研磨垫的背面具有支撑层。 这些抛光垫和用于抛光的层压体可以在背面上包括固定层13。

    Polishing pad for semiconductor wafer and laminated body for polishing of semiconductor wafer equipped with the same as well as method for polishing of semiconductor wafer
    44.
    发明申请
    Polishing pad for semiconductor wafer and laminated body for polishing of semiconductor wafer equipped with the same as well as method for polishing of semiconductor wafer 有权
    用于半导体晶片的抛光垫和用于抛光配备有其的半导体晶片的层叠体以及半导体晶片的抛光方法

    公开(公告)号:US20060128271A1

    公开(公告)日:2006-06-15

    申请号:US10529742

    申请日:2004-04-23

    IPC分类号: B24B49/00 B24B1/00 B24B7/30

    CPC分类号: B24B37/205

    摘要: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the present invention comprises a substrate 11 for a polishing pad provided with a through hole penetrating from surface to back, a light transmitting part 12 fitted in the through hole, the light transmitting part comprises a water-insoluble matrix material (1,2-polybutadiene) and a water-soluble particle (β-cyclodextrin) dispersed in the water-insoluble matrix material, and the water-soluble particle is less than 5% by volume based on 100% by volume of the total amount of the water-insoluble matrix material and the water-soluble particle. In addition, the laminated body for polishing of the present invention comprises a supporting layer on a backside of the polishing pad. These polishing pad and laminated body for polishing can comprise a fixing layer 13 on a backside.

    摘要翻译: 本发明的目的是提供一种用于半导体晶片的抛光垫和用于抛光配备有该半导体晶片的半导体晶片的半导体晶片的层叠体,其可以在不降低抛光性能的情况下进行光学终点检测以及半导体的抛光方法 晶圆使用它们。 本发明的抛光垫包括用于抛光垫的基板11,该抛光垫具有从表面向后穿透的通孔,安装在通孔中的透光部12,透光部包括水不溶性基质材料(1 ,2-聚丁二烯)和分散在水不溶性基质材料中的水溶性颗粒(β-环糊精),并且水溶性颗粒的体积百分比小于5体积% 水不溶性基质材料和水溶性颗粒。 另外,本发明的研磨用层叠体在研磨垫的背面具有支撑层。 这些抛光垫和用于抛光的层压体可以在背面上包括固定层13。

    Composition for polishing pad and polishing pad using the same
    48.
    发明授权
    Composition for polishing pad and polishing pad using the same 有权
    用于抛光垫的组合物和使用其的抛光垫

    公开(公告)号:US06790883B2

    公开(公告)日:2004-09-14

    申请号:US09867541

    申请日:2001-05-31

    IPC分类号: C08L300

    摘要: An object of the invention is to provide a polishing pad having the excellent slurry retaining properties and the large removal rate and a composition for a polishing pad which can form such the polishing pad. A composition for polishing pad of the invention is comprising a water-insoluble matrix material containing a crosslinked polymer and a water-soluble particle dispersed in the water-insoluble matrix material. The elongation remaining after breaking is 100% or less when a test piece comprising the water-insoluble matrix material is broken at 80° C. according to JIS K 6251. A polishing pad of the invention is that at least a part of the polishing pad comprises the composition for polishing pad.

    摘要翻译: 本发明的目的是提供一种抛光垫,该抛光垫具有优异的浆料保持性能和较大的去除速率以及可形成这种抛光垫的抛光垫组合物。 本发明的抛光垫组合物包含含有交联聚合物的水不溶性基质材料和分散在水不溶性基质材料中的水溶性颗粒。 根据JIS K 6251,当包含水不溶性基质材料的试验片在80℃下破裂时,断裂后剩余的伸长率为100%以下。本发明的研磨垫是至少一部分研磨垫 包括用于抛光垫的组合物。

    Aqueous dispersion for chemical mechanical polishing
    49.
    发明授权
    Aqueous dispersion for chemical mechanical polishing 有权
    化学机械抛光用水分散体

    公开(公告)号:US06383240B1

    公开(公告)日:2002-05-07

    申请号:US09672310

    申请日:2000-09-29

    IPC分类号: C09K314

    摘要: It is an object of the present invention to provide an aqueous dispersion for CMP that has low generation of coarse particles from abrasive particles or the like during storage or transport and maintains excellent polishing performance The aqueous dispersion for CMP according to the first aspect of the invention comprises abrasive particles, an amphipathic compound and water. The aqueous dispersion for CMP according to the second aspect of the invention comprising abrasive particles and water, wherein a boundary film is formed at the interface between the aqueous dispersion and the air. The boundary film may comprise an amphipathic compound. The HLB value of the amphipathic compound is preferably greater than 0 but no greater than 6. As amphipathic compounds there may be used one or more compounds selected from among [1] aliphatic alcohols, [2] fatty acids, [3] sorbitan fatty acid esters, [4] glycerin fatty acid esters, [5] propylene glycol fatty acid esters and [6] polyethylene glycol fatty acid esters.

    摘要翻译: 本发明的一个目的是提供一种用于CMP的水性分散体,其在储存或运输期间具有低磨粒颗粒等的粗颗粒,并保持优异的抛光性能。根据本发明第一方面的用于CMP的水性分散体 包括磨料颗粒,两亲性化合物和水。 根据本发明第二方面的用于CMP的水性分散体包含研磨颗粒和水,其中在水分散体和空气之间的界面处形成边界膜。 边界膜可以包含两亲性化合物。 两亲化合物的HLB值优选大于0但不大于6.作为两性化合物,可以使用一种或多种选自[1]脂肪醇,[2]脂肪酸,[3]脱水山梨糖醇脂肪酸 酯,[4]甘油脂肪酸酯,[5]丙二醇脂肪酸酯和[6]聚乙二醇脂肪酸酯。