公开(公告)号：US20080142869A1

公开(公告)日：2008-06-19

申请号：US11987294

申请日：2007-11-29

Applicant: Kong-Sam Jang ,  Jeong-uk Han ,  Yong-tae Kim ,  Weon-ho Park

Inventor： Kong-Sam Jang ,  Jeong-uk Han ,  Yong-tae Kim ,  Weon-ho Park

IPC: H01L29/788 ,  H01L21/336

CPC classification number: H01L29/7885 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/40114 ,  H01L29/42328

Abstract: Example embodiments relate to a non-volatile memory device and a method of forming the same. A non-volatile memory device according to example embodiments may include a conductive pattern provided on the semiconductor substrate. A tunnel insulator may be provided on the conductive pattern. A memory gate structure may be provided on the semiconductor substrate so as to cover a first end of the conductive pattern. The first end may include an upward tapering, first protrusion. A select gate structure may be provided on the semiconductor substrate so as to cover the second end of the conductive pattern. The second end may include an upward tapering, second protrusion. The coverage of the first protrusion by the memory gate structure may be greater than the coverage of the second protrusion by the select gate structure.

Abstract translation: 示例性实施例涉及非易失性存储器件及其形成方法。 根据示例性实施例的非易失性存储器件可以包括设置在半导体衬底上的导电图案。 隧道绝缘体可以设置在导电图案上。 可以在半导体衬底上提供存储栅结构，以便覆盖导电图案的第一端。 第一端可包括向上逐渐变细的第一突起。 可以在半导体衬底上设置选择栅极结构，以覆盖导电图案的第二端。 第二端可以包括向上渐缩的第二突起。 通过存储器栅极结构的第一突起的覆盖可以大于通过选择栅极结构的第二突起的覆盖。

公开(公告)号：US20070262373A1

公开(公告)日：2007-11-15

申请号：US11800650

申请日：2007-05-07

Applicant: Weon-ho Park ,  Jeong-uk Han ,  Yong-tae Kim ,  Tea-kwang Yu ,  Kwang-tae Kim ,  Ji-hoon Park

Inventor： Weon-ho Park ,  Jeong-uk Han ,  Yong-tae Kim ,  Tea-kwang Yu ,  Kwang-tae Kim ,  Ji-hoon Park

IPC: H01L29/792

CPC classification number: H01L29/7885 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324

Abstract: A non-volatile memory integrated circuit device and a method of fabricating the same are disclosed. The non-volatile memory integrated circuit device includes a semiconductor substrate, a tunneling dielectric layer, a memory gate and a select gate, a floating junction region, a bit line junction region and a common source region, and a tunneling-prevention dielectric layer pattern. The tunneling dielectric layer is formed on the semiconductor substrate. The memory gate and a select gate are formed on the tunneling dielectric layer to be spaced apart from each other. The floating junction region is formed within the semiconductor substrate between the memory gate and the select gate, the bit line junction region is formed opposite the floating junction region with respect to the memory gate, and a common source region is formed opposite the floating junction region with respect to the select gate. The tunneling-prevention dielectric layer pattern is interposed between the semiconductor substrate and the tunneling dielectric layer, and is configured to overlap part of the memory gate.

Abstract translation: 公开了一种非易失性存储器集成电路器件及其制造方法。 非易失性存储器集成电路器件包括半导体衬底，隧道电介质层，存储栅极和选择栅极，浮置结区域，位线结区域和公共源极区域，以及防止隧道的电介质层图案 。 隧道介电层形成在半导体衬底上。 存储器栅极和选择栅极形成在隧道电介质层上以彼此间隔开。 在存储栅极和选择栅极之间的半导体衬底内形成浮点结区域，与存储栅极相对地形成位线接合区域，并且与浮置结区域相对形成公共源极区域 相对于选择门。 防止隧道的电介质层图案介于半导体衬底和隧穿电介质层之间，并被配置为与存储器栅极的一部分重叠。

公开(公告)号：US07238572B2

公开(公告)日：2007-07-03

申请号：US11096038

申请日：2005-03-31

Applicant: Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

Inventor： Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

IPC: H01L21/336

CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/66825

Abstract: A method of manufacturing an EEPROM cell includes growing a first oxide layer on a semiconductor substrate; forming a first conductive layer on the first oxide layer; forming a first conductive pattern and a tunneling oxide layer by patterning the first conductive layer and the first oxide layer, the tunneling oxide layer being disposed under the first conductive pattern; forming a gate oxide layer on sidewalls of the first conductive pattern and the substrate and forming a second conductive pattern on both sides of the first conductive pattern; forming a conductive layer for a floating gate by electrically connecting the first conductive pattern to the second conductive pattern; forming a coupling oxide layer on the conductive layer for the floating gate; forming a third conductive layer on the coupling oxide layer; and forming a select transistor and a control transistor by patterning the third conductive layer, the coupling oxide layer, and the conductive layer for the floating gate. The select transistor is spaced apart from the control transistor. The select transistor, which is formed on the tunneling oxide layer, includes a gate stack formed of a select gate, a first coupling oxide pattern, and a first floating gate, and the control transistor includes a gate stack formed of a control gate, a second coupling oxide pattern, and a second floating gate.

Abstract translation: 制造EEPROM单元的方法包括在半导体衬底上生长第一氧化物层; 在所述第一氧化物层上形成第一导电层; 通过图案化所述第一导电层和所述第一氧化物层来形成第一导电图案和隧道氧化物层，所述隧穿氧化物层设置在所述第一导电图案下方; 在所述第一导电图案和所述基板的侧壁上形成栅氧化层，并在所述第一导电图案的两侧上形成第二导电图案; 通过将所述第一导电图案电连接到所述第二导电图案来形成用于浮置栅极的导电层; 在浮栅的导电层上形成耦合氧化物层; 在所述耦合氧化物层上形成第三导电层; 以及通过图案化第三导电层，耦合氧化物层和浮栅的导电层来形成选择晶体管和控制晶体管。 选择晶体管与控制晶体管间隔开。 形成在隧道氧化物层上的选择晶体管包括由选择栅极，第一耦合氧化物图案和第一浮置栅极形成的栅极堆叠，并且控制晶体管包括由控制栅极形成的栅极堆叠， 第二耦合氧化物图案和第二浮栅。

公开(公告)号：US20070063267A1

公开(公告)日：2007-03-22

申请号：US11600765

申请日：2006-11-17

Applicant: Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

Inventor： Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

IPC: H01L21/336

CPC classification number: H01L27/11568 ,  H01L27/115

Abstract: A self-aligned 1 bit silicon oxide nitride oxide silicon (SONOS) cell and a method of fabricating the same has high uniformity between adjacent SONOS cells, since the lengths of nitride layers do not vary due to misalignment when etching word lines of the 1 bit SONOS cells. An insulating layer pattern that forms a sidewall of a word line is formed on a semiconductor substrate, and a word line for a gate is formed on the sidewall thereof. Etching an ONO layer using a self-aligned etching spacer provides uniform adjacent SONOS cells.

Abstract translation: 自对准1比特氧化硅氮氧化物硅（SONOS）单元及其制造方法在相邻SONOS单元之间具有高均匀性，因为当蚀刻1比特的字线时，氮化物层的长度不会由于未对准而变化 SONOS细胞。 在半导体衬底上形成形成字线侧壁的绝缘层图案，在其侧壁上形成用于栅极的字线。 使用自对准蚀刻间隔物蚀刻ONO层提供均匀的相邻SONOS电池。

公开(公告)号：US07141473B2

公开(公告)日：2006-11-28

申请号：US10912046

申请日：2004-08-06

Applicant: Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

Inventor： Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

IPC: H01L21/336

CPC classification number: H01L27/11568 ,  H01L27/115

Abstract: A self-aligned 1 bit silicon oxide nitride oxide silicon (SONOS) cell and a method of fabricating the same has high uniformity between adjacent SONOS cells, since the lengths of nitride layers do not vary due to misalignment when etching word lines of the 1 bit SONOS cells. An insulating layer pattern that forms a sidewall of a word line is formed on a semiconductor substrate, and a word line for a gate is formed on the sidewall thereof. Etching an ONO layer using a self-aligned etching spacer provides uniform adjacent SONOS cells.

Abstract translation: 自对准1比特氧化硅氮氧化物硅（SONOS）单元及其制造方法在相邻SONOS单元之间具有高均匀性，因为当蚀刻1比特的字线时，氮化物层的长度不会由于未对准而变化 SONOS细胞。 在半导体衬底上形成形成字线侧壁的绝缘层图案，在其侧壁上形成用于栅极的字线。 使用自对准蚀刻间隔物蚀刻ONO层提供均匀的相邻SONOS电池。

公开(公告)号：US09172942B2

公开(公告)日：2015-10-27

申请号：US13586950

申请日：2012-08-16

Applicant: Yong-tae Kim ,  Jae-seung Kim ,  Seon-deok Hwang

Inventor： Yong-tae Kim ,  Jae-seung Kim ,  Seon-deok Hwang

IPC: H04N13/00 ,  H04N13/04 ,  H04N19/597

CPC classification number: H04N13/189 ,  H04N13/106 ,  H04N13/128 ,  H04N13/161 ,  H04N13/178 ,  H04N13/194 ,  H04N13/282 ,  H04N13/359 ,  H04N19/597 ,  H04N2213/003

Abstract: A method and apparatus for using header information of stereoscopic image data is provided. The method includes using three-dimensional reproduction period information related to three-dimensionally reproduced stereoscopic image data of image data recorded in a payload region of the stereoscopic image bitstream, in a header region of the stereoscopic image bitstream; recording camera information related to cameras used for obtaining a stereoscopic image, in the header region; recording parallax information between base and additional images of the stereoscopic image in the header region; and recording the image data in the payload region of the stereoscopic image bitstream.

Abstract translation: 提供了一种使用立体图像数据的标题信息的方法和装置。 该方法包括使用与立体图像比特流的有效负载区域中记录的图像数据的三维再现的立体图像数据相关的三维再现周期信息，在立体图像比特流的标题区域中; 在头部区域中记录与用于获得立体图像的相机相关的照相机信息; 在标题区域中的立体图像的基础图像和附加图像之间记录视差信息; 并将图像数据记录在立体图像比特流的有效载荷区域中。

公开(公告)号：US08929643B2

公开(公告)日：2015-01-06

申请号：US13404954

申请日：2012-02-24

Applicant: Yong-tae Kim ,  Jae-seung Kim ,  Dac-sik Kim

Inventor： Yong-tae Kim ,  Jae-seung Kim ,  Dac-sik Kim

IPC: G06K9/00 ,  G06T7/00

CPC classification number: G06T7/002 ,  G06T7/85

Abstract: Provided is a method of receiving multiview camera parameters for a stereoscopic image. The method includes: extracting multiview camera parameter information for a predetermined data section from a received stereoscopic image data stream; extracting matrix information including at least one of translation matrix information and rotation matrix information for the predetermined data section from the multiview camera parameter information; and restoring coordinate systems of multiview cameras by using the extracted matrix information.

Abstract translation: 提供了一种用于接收立体图像的多视点相机参数的方法。 该方法包括：从接收的立体图像数据流中提取预定数据段的多视点摄像机参数信息; 从所述多视点摄像机参数信息中提取包括所述预定数据部分的平移矩阵信息和旋转矩阵信息中的至少一个的矩阵信息; 并通过使用提取的矩阵信息恢复多视角摄像机的坐标系。

公开(公告)号：US08878836B2

公开(公告)日：2014-11-04

申请号：US12266870

申请日：2008-11-07

Applicant: Yong-tae Kim ,  Jae-yeon Song ,  Gun-ill Lee ,  Seo-young Hwang ,  Dae-sik Kim ,  Jae-seung Kim

Inventor： Yong-tae Kim ,  Jae-yeon Song ,  Gun-ill Lee ,  Seo-young Hwang ,  Dae-sik Kim ,  Jae-seung Kim

IPC: G06T15/00 ,  H04N19/50 ,  H04N19/597

CPC classification number: H04N19/597 ,  H04N19/50

Abstract: Provided are a method and apparatus for encoding and decoding a datastream into which multiview image information is inserted. The method of decoding a multiview image datastream includes extracting multiview image information including information on at least one view image of a multiview image, from at least one elementary stream of the multiview image datastream; extracting a multiview image parameter regarding the multiview image based on the number of elementary streams and a correlation between view images of the multiview image; and restoring the multiview image by using the extracted multiview image parameter and the extracted multiview image information.

Abstract translation: 提供了一种用于对数据流进行编码和解码的方法和装置，其中插入有多视图图像信息。 解码多视图图像数据流的方法包括从多视点图像数据流的至少一个基本流中提取包括关于多视图图像的至少一个视图图像的信息的多视图图像信息; 基于基本流的数量和多视图图像的观看图像之间的相关性提取关于多视图图像的多视图图像参数; 以及通过使用提取的多视图图像参数和所提取的多视图图像信息来恢复多视图图像。

公开(公告)号：US08538134B2

公开(公告)日：2013-09-17

申请号：US12146942

申请日：2008-06-26

Applicant: Yong-tae Kim ,  Jae-seung Kim ,  Dae-sik Kim

Inventor： Yong-tae Kim ,  Jae-seung Kim ,  Dae-sik Kim

IPC: G06K9/00

CPC classification number: H04N19/597 ,  H04N13/156 ,  H04N13/161 ,  H04N13/194 ,  H04N13/361

Abstract: Provided are a method and apparatus for receiving and generating an image data stream including a three dimensional (3D) image. The method of receiving an image data stream includes receiving an image data stream including at least one of two dimensional (2D) and 3D image data periods; extracting local 3D image parameters, which are parameters of each image data period, from the image data stream; and restoring at least one of 2D and 3D images by using the local 3D image parameters. In the method, each 3D image is composed of at least one of a base image and an additional image, and the local 3D image parameters include stereoscopic arrangement order information representing an arrangement order of the base image and additional image of the 3D image.

Abstract translation: 提供了一种用于接收和生成包括三维（3D）图像的图像数据流的方法和装置。 接收图像数据流的方法包括接收包括二维（2D）和3D图像数据周期中的至少一个的图像数据流; 从图像数据流中提取作为每个图像数据周期的参数的局部3D图像参数; 以及通过使用本地3D图像参数来恢复2D和3D图像中的至少一个。 在该方法中，每个3D图像由基本图像和附加图像中的至少一个构成，并且局部3D图像参数包括表示基本图像的排列顺序和3D图像的附加图像的立体排列顺序信息。

公开(公告)号：US08351436B2

公开(公告)日：2013-01-08

申请号：US12597850

申请日：2008-08-19

Applicant: Bin-yeong Yoon ,  Man-soo Han ,  Sung-chang Kim ,  Hark Yoo ,  Dong-soo Lee ,  Jong-deog Kim ,  Kyeong-hwan Doo ,  Yong-tae Kim ,  Kwang-ok Kim ,  Bong-kyu Kim ,  Geun-yong Kim ,  Sung-hoon Kwak ,  Mun-seob Lee ,  Le Quan

Inventor： Bin-yeong Yoon ,  Man-soo Han ,  Sung-chang Kim ,  Hark Yoo ,  Dong-soo Lee ,  Jong-deog Kim ,  Kyeong-hwan Doo ,  Yong-tae Kim ,  Kwang-ok Kim ,  Bong-kyu Kim ,  Geun-yong Kim ,  Sung-hoon Kwak ,  Mun-seob Lee ,  Le Quan

IPC: H04L12/28 ,  H04L12/56

CPC classification number: H04J3/1694 ,  H04J2203/0067 ,  H04Q11/0067 ,  H04Q2011/0064

Abstract: Provided are an apparatus and method for efficiently and dynamically allocating a bandwidth on a Time Division Multiple Access-based Passive Optical Network (TDMA PON). The dynamic bandwidth allocation apparatus for uplink data transmission of a plurality of Optical Network Units (ONUs) including a plurality of class queues corresponding to Transmission Container (T-CONT) types, the plurality of ONUs connected to an Optical Line Terminal (OLT) on a Passive Optical Network (PON), includes: a class queue information storage unit storing information regarding a bandwidth allocation period and an allocatable bandwidth amount for each T-CONT type; an allocation check table unit checking the bandwidth allocation period for the T-CONT type received from the class queue information storage unit, and determining an allocatable bandwidth amount for the T-CONT type; and a bandwidth allocation unit allocating an uplink bandwidth to the T-CONT type with reference to the bandwidth allocation period and the allocatable bandwidth amount for the T-CONT type, and re-allocating to each ONU an uplink bandwidth remaining after allocating a total uplink bandwidths to all T-CONT types.

Abstract translation: 提供了一种用于在基于时分多址接入的无源光网络（TDMA PON）上有效且动态地分配带宽的装置和方法。 用于包括对应于传输容器（T-CONT）类型的多个类队列的多个光网络单元（ONU）的上行链路数据传输的动态带宽分配装置，连接到光线路终端（OLT）上的多个ONU 无源光网络（PON）包括：类队列信息存储单元，存储关于每个T-CONT类型的带宽分配周期和可分配带宽量的信息; 分配检查表单元，检查从类队列信息存储单元接收到的T-CONT类型的带宽分配周期，以及确定T-CONT类型的可分配带宽量; 以及带宽分配单元，参照带宽分配期间和T-CONT类型的可分配带宽量向T-CONT类型分配上行链路带宽，并且在分配总上行链路之后向每个ONU重新分配剩余的上行链路带宽 所有T-CONT类型的带宽。