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公开(公告)号：US20160266217A1
公开(公告)日：2016-09-15
申请号：US15160244
申请日：2016-05-20
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Wolfgang Raberg
IPC: G01R33/09
CPC classification number: G01R33/091 , G01R33/098
Abstract: Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently oriented serially connected portions. In another embodiment, an xMR strip includes a varying width or other characteristic. Such configurations can address discontinuities associated with conventional xMR sensors and improve xMR sensor performance.
Abstract translation: 实施例涉及包括巨磁阻（GMR），隧道磁阻（TMR）或各向异性磁阻（AMR）的xMR传感器以及xMR传感器内的xMR条的配置。 在一个实施例中，xMR条包括多个不同尺寸和/或不同取向的串联连接部分。 在另一个实施例中，xMR条带包括变化的宽度或其它特征。 这种配置可以解决与常规xMR传感器相关的不连续性，并改善xMR传感器性能。
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公开(公告)号：US20150185297A1
公开(公告)日：2015-07-02
申请号：US14141660
申请日：2013-12-27
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Armin Satz , Wolfgang Raberg , Hubert Brueckl , Dieter Suess
IPC: G01R33/09
CPC classification number: G01R33/093 , G01R33/095 , G01R33/096 , G01R33/098
Abstract: A device according to an embodiment may comprise a magneto-resistive structure comprising a magnetic free layer with a spontaneously generated in-plane closed flux magnetization pattern and a magnetic reference layer having a non-closed flux magnetization pattern.
Abstract translation: 根据实施例的装置可以包括磁阻结构，其包括具有自发生成的平面内磁通磁化模式的磁性自由层和具有非闭合磁通磁化模式的磁性参考层。
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公开(公告)号：US20230160929A1
公开(公告)日：2023-05-25
申请号：US17534677
申请日：2021-11-24
Applicant: Infineon Technologies AG
Inventor： Milan Agrawal , Dominik Durner , Wolfgang Raberg
CPC classification number: G01R15/207 , G01R19/0092
Abstract: The described techniques address issues associated with coreless current sensors by implementing a current sensor solution that may use as few as two, two-dimensional (2D) linear sensors. The discussed techniques provide a coreless current sensor solution that is independent of the sensor position with respect to a current-carrying conductor. An algorithm is also described for auto-calibration of sensor position with respect to a current-carrying conductor to calculate the current flowing through the conductor. The calculation of current may be performed independent of the position of the current-carrying conductor with respect to the sensor, and thus the disclosed techniques provide additional advantages regarding installation flexibility without sacrificing measurement accuracy.
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44.发明申请公开(公告)号：US20230066358A1
公开(公告)日：2023-03-02
申请号：US17461117
申请日：2021-08-30
Applicant: Infineon Technologies AG
Inventor： Dieter Suess , Udo Ausserlechner , Armin Satz , Klemens Pruegl , Wolfgang Raberg , Milan Agrawal , Johannes Guettinger , Michael Kirsch
IPC: G01R33/07
Abstract: The described techniques facilitate the use of a magnetic field sensor that implements the same magnetic layer stack for the detection of the x, y, and z components of an external magnetic field. The sensor advantageously is insensitive to orthogonal stray fields and operates with a reduced offset compared to conventional magnetic field sensors. The linear regime implemented by the sensor to facilitate magnetic field detection may also be adjusted per application by tuning the current strength.
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公开(公告)号：US11467232B2
公开(公告)日：2022-10-11
申请号：US16948478
申请日：2020-09-21
Applicant: Infineon Technologies AG
Inventor： Clemens Muehlenhoff , Wolfgang Raberg , Dieter Suess
Abstract: Example implementations are concerned with magnetoresistive sensors and with corresponding fabrication methods for magnetoresistive sensors. One example here relates to a magnetoresistive sensor having a layer stack. The layer stack comprises a reference layer having a reference magnetization, which is fixed and has a first magnetic orientation. The layer stack comprises a magnetically free layer. The magnetically free layer has a magnetically free magnetization. The magnetically free magnetization is variable in the presence of an external magnetic field. The magnetically free magnetization has a second magnetic orientation in a ground state. One of the first or the second magnetic orientation is oriented in-plane and the other is oriented out-of-plane. The layer stack comprises a metal multilayer. In this case, either the metal multilayer is arranged adjacent to the magnetically free layer, or the metal multilayer constitutes the magnetically free layer.
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Patent Agency Ranking
公开(公告)号：US11333721B2
公开(公告)日：2022-05-17
申请号：US15160244
申请日：2016-05-20
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Wolfgang Raberg
IPC: G01R33/09
Abstract: Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently oriented serially connected portions. In another embodiment, an xMR strip includes a varying width or other characteristic. Such configurations can address discontinuities associated with conventional xMR sensors and improve xMR sensor performance.
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47.发明授权公开(公告)号：US10585148B2
公开(公告)日：2020-03-10
申请号：US15375995
申请日：2016-12-12
Applicant: Infineon Technologies AG
Inventor： Anton Bachleitner Hofmann , Hubert Brueckl , Klemens Pruegl , Wolfgang Raberg , Armin Satz , Dieter Suess , Tobias Wurft
Abstract: An embodiment relates to a magnetic sensor device (500) comprising a magneto-resistive structure (501). The magneto-resistive structure (501) comprises a magnetic free layer (502) configured to spontaneously generate a closed flux magnetization pattern in the free layer (502). The magneto-resistive structure (500) also comprises a magnetic reference layer (506) having a non-closed flux reference magnetization pattern. The magnetic sensor device (500) further comprises a current generator (580) configured to generate an electric current in one or more layers of the magneto-resistive structure (501). The electric current has a non-zero directional component perpendicular to the reference magnetization pattern.
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公开(公告)号：US09959890B2
公开(公告)日：2018-05-01
申请号：US15400521
申请日：2017-01-06
Applicant: Infineon Technologies AG
Inventor： Wolfgang Raberg , Andreas Strasser , Hermann Wendt , Klemens Pruegl
CPC classification number: G11B5/3903 , G01R33/09 , G11B5/3909 , G11B2005/3996
Abstract: A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL. The second etching process can also etch a portion of the magnetoresistive stack. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.
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公开(公告)号：US09691970B2
公开(公告)日：2017-06-27
申请号：US14966205
申请日：2015-12-11
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Wolfgang Raberg , Stephan Schmitt
Abstract: A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer are separated by a portion of the electrically insulating layer.
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公开(公告)号：US20170125044A1
公开(公告)日：2017-05-04
申请号：US15400521
申请日：2017-01-06
Applicant: Infineon Technologies AG
Inventor： Wolfgang Raberg , Andreas Strasser , Hermann Wendt , Klemens Pruegl
IPC: G11B5/39
CPC classification number: G11B5/3903 , G01R33/09 , G11B5/3909 , G11B2005/3996
Abstract: A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL. The second etching process can also etch a portion of the magnetoresistive stack. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.
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