公开(公告)号：US20230320236A1

公开(公告)日：2023-10-05

申请号：US18063722

申请日：2022-12-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Douglas M. Gill ,  Martin O. Sandberg ,  Vivekananda P. Adiga ,  Jason S. Orcutt ,  Jerry M. Chow

IPC: G06N10/00 ,  H10N60/12 ,  H10N60/80

CPC classification number: H10N60/805 ,  G06N10/00 ,  H10N60/12 ,  B82Y10/00

Abstract: A method for adjusting a resonance frequency of a qubit in a quantum mechanical device includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit comprising capacitor pads; and removing substrate material from the backside of the substrate at an area opposite the at least one qubit to alter a capacitance around the at least one qubit so as to adjust a resonance frequency of the at least one qubit.

公开(公告)号：US11621466B2

公开(公告)日：2023-04-04

申请号：US17129514

申请日：2020-12-21

Applicant: International Business Machines Corporation

Inventor： Salvatore B. Olivadese ,  Patryk Gumann ,  Jerry M. Chow

IPC: H01P3/08 ,  H01P11/00 ,  H01P5/08 ,  H01P1/30

Abstract: A stripline that is usable in a quantum application (q-stripline) includes a first polyimide film and a second polyimide film. The q-stripline further includes a first center conductor and a second center conductor formed between the first polyimide film and the second polyimide film. The q-stripline has a first pin configured through the second polyimide film to make electrical and thermal contact with the first center conductor.

公开(公告)号：US11552236B2

公开(公告)日：2023-01-10

申请号：US16752146

申请日：2020-01-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Douglas M. Gill ,  Martin O. Sandberg ,  Vivekananda P. Adiga ,  Jason S. Orcutt ,  Jerry M. Chow

IPC: H01L39/02 ,  G06N10/00 ,  H01L39/22 ,  B82Y10/00

Abstract: A method for adjusting a resonance frequency of a qubit in a quantum mechanical device includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit comprising capacitor pads; and removing substrate material from the backside of the substrate at an area opposite the at least one qubit to alter a capacitance around the at least one qubit so as to adjust a resonance frequency of the at least one qubit.

公开(公告)号：US11424522B2

公开(公告)日：2022-08-23

申请号：US16751444

申请日：2020-01-24

Applicant: International Business Machines Corporation

Inventor： Salvatore Bernardo Olivadese ,  Patryk Gumann ,  Jay M. Gambetta ,  Jerry M. Chow

IPC: H01P1/22 ,  H01P11/00 ,  H01P1/30 ,  G06N10/00 ,  H01L39/00

Abstract: Techniques for facilitating reduced thermal resistance attenuator on high-thermal conductivity substrates for quantum applications are provided. A device can comprise a substrate that provides a thermal conductivity level that is more than a defined thermal conductivity level. The device can also comprise one or more grooved transmission lines formed in the substrate. The one or more grooved transmission lines can comprise a powder substance. Further, the device can comprise one or more copper heat sinks formed in the substrate. The one or more copper heat sinks can provide a ground connection. Further, the one or more copper heat sinks can be formed adjacent to the one or more grooved transmission lines.

公开(公告)号：US20220221104A1

公开(公告)日：2022-07-14

申请号：US17144749

申请日：2021-01-08

Applicant: International Business Machines Corporation

Inventor： Jerry M. Chow ,  Patryk Gumann

IPC: F17C3/08 ,  F25B9/10 ,  F25B9/12

Abstract: Techniques facilitating efficient thermal profile management within cryogenic environments are provided. In one example, a cryostat can comprise a plurality of thermal stages intervening between a 4-Kelvin (K) stage and a Cold Plate stage. The plurality of thermal stages can include a Still stage and an intermediate thermal stage that provides additional cooling capacity for the cryostat. The intermediate thermal stage can be directly coupled mechanically to the Still stage via a support rod.

公开(公告)号：US11289637B2

公开(公告)日：2022-03-29

申请号：US16381563

申请日：2019-04-11

Applicant: International Business Machines Corporation

Inventor： Vivekananda P. Adiga ,  Martin O. Sandberg ,  Jerry M. Chow ,  Hanhee Paik

IPC: H01L39/22 ,  H01L39/02 ,  G06N10/00 ,  H01L39/12 ,  H01L39/24

Abstract: A qubit includes a substrate, and a first capacitor structure having a lower portion formed on a surface of the substrate and at least one first raised portion extending above the surface of the substrate. The qubit further includes a second capacitor structure having a lower portion formed on the surface of the substrate and at least one second raised portion extending above the surface of the substrate. The first capacitor structure and the second capacitor structure are formed of a superconducting material. The qubit further includes a junction between the first capacitor structure and the second capacitor structure. The junction is disposed at a predetermined distance from the surface of the substrate and has a first end in contact with the first raised portion and a second end in contact with the second raised portion.

公开(公告)号：US11227229B2

公开(公告)日：2022-01-18

申请号：US17027388

申请日：2020-09-21

Applicant: International Business Machines Corporation

Inventor： Jerry M. Chow ,  Sami Rosenblatt

IPC: G06N10/00 ,  H01L39/02 ,  H01L39/22

Abstract: A quantum computing device is formed using a first chip and a second chip, the first chip having a first substrate, a first set of pads, and a set of Josephson junctions disposed on the first substrate. The second chip has a second substrate, a second set of pads disposed on the second substrate opposite the first set of pads, and a second layer formed on a subset of the second set of pads. The second layer is configured to bond the first chip and the second chip. The subset of the second set of pads corresponds to a subset of the set of Josephson junctions selected to avoid frequency collision between qubits in a set of qubits. A qubit is formed using a Josephson junction from the subset of Josephson junctions and another Josephson junction not in the subset being rendered unusable for forming qubits.

公开(公告)号：US11170317B2

公开(公告)日：2021-11-09

申请号：US15455470

申请日：2017-03-10

Applicant: International Business Machines Corporation

Inventor： Jerry M. Chow ,  Jay M. Gambetta ,  Easwar Magesan ,  Sarah E. Sheldon

IPC: G06N10/00 ,  H03K19/195 ,  B82Y10/00

Abstract: In a system including a cross-resonance gate having a superconducting control qubit and having a superconducting target qubit coupled through a bus resonator, echo pulses are generated at a first frequency and directed to the control qubit, wherein the first frequency is on resonance with the control qubit. Cross-resonance pulses are generated at a second frequency on resonance with the target qubit and applied to the control qubit, wherein the generating and applying the cross-resonance pulses induce rotations on the target qubit through an interaction that is mediated by the bus resonator. Cancellation pulses are generated at the second frequency and applied to the target qubit. Sets of Hamiltonian tomographies may be measured to determine appropriate amplitudes and phases of the cross-resonance and cancellation pulses.

公开(公告)号：US20210119313A1

公开(公告)日：2021-04-22

申请号：US17131916

申请日：2020-12-23

Applicant: International Business Machines Corporation

Inventor： Salvatore Bernardo Olivadese ,  Patryk Gumann ,  Jay M. Gambetta ,  Jerry M. Chow

IPC: H01P1/22 ,  H01P1/30 ,  H01P11/00 ,  H01P3/08

Abstract: The technology described herein is directed towards a cryogenic-stripline microwave attenuator. A first high thermal conductivity substrate such as sapphire and a second high thermal conductivity substrate such as sapphire, along with a signal conductor comprising one or more attenuator lines between the substrates form a stripline. A compression component such as one or more screws, vias (plus clamps) and/or clamps presses the first high thermal conductivity substrate against one side of the signal conductor and presses the second high thermal conductivity substrate against another side of the signal conductor. The high thermal conductivity of the substrates facilitates improved thermalization, while the pressing of the substrates against the conductor reduces the thermal boundary (Kapitza) resistance and thereby, for example, improves thermalization and reduces thermal noise.

公开(公告)号：US10971790B2

公开(公告)日：2021-04-06

申请号：US16880478

申请日：2020-05-21

Applicant: International Business Machines Corporation

Inventor： Salvatore B. Olivadese ,  Patryk Gumann ,  Jerry M. Chow

IPC: H01P3/08 ,  H01P11/00 ,  H01L23/66 ,  H01L39/02 ,  H01L39/24

Abstract: A microstrip that is usable in a quantum application (q-microstrip) includes a ground plane, a polyimide film disposed over the ground plane at a first surface of the polyimide film, and a conductor formed on a second side of the polyimide film such that the first surface is substantially opposite to the second surface. A material of the conductor provides greater than a threshold thermal conductivity (TH) with a structure of a dilution fridge stage (stage).