CONTACTLESS SCREENING OF A QUBIT
    2.
    发明公开

    公开(公告)号:US20230333138A1

    公开(公告)日:2023-10-19

    申请号:US18339705

    申请日:2023-06-22

    CPC classification number: G01Q60/00 G06N10/00

    Abstract: Systems, devices, computer-implemented methods, and computer program products to facilitate contactless screening of a qubit are provided. According to an embodiment, a system can comprise a memory that stores computer executable components and a processor that executes the computer executable components stored in the memory. The computer executable components can comprise a scanner component that establishes a direct microwave coupling of a scanning probe device to a qubit of a quantum device. The computer executable components can further comprise a parameter extraction component that determines qubit frequency of the qubit based on the direct microwave coupling.

    Contactless screening of a qubit
    3.
    发明授权

    公开(公告)号:US11726109B2

    公开(公告)日:2023-08-15

    申请号:US17137009

    申请日:2020-12-29

    CPC classification number: G01Q60/00 G06N10/00

    Abstract: Systems, devices, computer-implemented methods, and computer program products to facilitate contactless screening of a qubit are provided. According to an embodiment, a system can comprise a memory that stores computer executable components and a processor that executes the computer executable components stored in the memory. The computer executable components can comprise a scanner component that establishes a direct microwave coupling of a scanning probe device to a qubit of a quantum device. The computer executable components can further comprise a parameter extraction component that determines qubit frequency of the qubit based on the direct microwave coupling.

    TRANSMON QUBITS WITH SELF DEFINED JUNCTIONS

    公开(公告)号:US20210151659A1

    公开(公告)日:2021-05-20

    申请号:US16684404

    申请日:2019-11-14

    Abstract: A method of making a Josephson junction in a superconducting qubit includes providing a substrate having a convex structure with a first face and a second face meeting at an edge; depositing a first layer of superconducting material on the first face; oxidizing the first layer to form a layer of oxide material on a surface of the first layer; and depositing a second layer of the superconducting material on the second face. A portion of the second layer is in contact with a portion of the layer of oxide material at or in the vicinity of the edge such that the portion of the layer of oxide material is sandwiched between a portion of the first layer and the portion of the second layer to define a Josephson junction at or in the vicinity of the edge.

    ELECTRICAL LEADS FOR TRENCHED QUBITS

    公开(公告)号:US20210119104A1

    公开(公告)日:2021-04-22

    申请号:US17135584

    申请日:2020-12-28

    Abstract: Techniques for forming quantum circuits, including connections between components of quantum circuits, are presented. A trench can be formed in a dielectric material, by removing a portion of the dielectric material and a portion of conductive material layered on top of the dielectric material, to enable creation of circuit components of a circuit. The trench can define a regular nub or compensated nub to facilitate creating electrical leads connected to the circuit components on a nub. The compensated nub can comprise recessed regions to facilitate depositing material during evaporation to form the leads. For compensated nub implementation, material can be evaporated in two directions, with oxidation performed in between such evaporations, to contact leads and form a Josephson junction. For regular nub implementation, material can be evaporated in four directions, with oxidation performed in between the third and fourth evaporations, to contact leads and form a Josephson junction.

    Electrical leads for trenched qubits

    公开(公告)号:US10916690B2

    公开(公告)日:2021-02-09

    申请号:US16202828

    申请日:2018-11-28

    Abstract: Techniques for forming quantum circuits, including connections between components of quantum circuits, are presented. A trench can be formed in a dielectric material, by removing a portion of the dielectric material and a portion of conductive material layered on top of the dielectric material, to enable creation of circuit components of a circuit. The trench can define a regular nub or compensated nub to facilitate creating electrical leads connected to the circuit components on a nub. The compensated nub can comprise recessed regions to facilitate depositing material during evaporation to form the leads. For compensated nub implementation, material can be evaporated in two directions, with oxidation performed in between such evaporations, to contact leads and form a Josephson junction. For regular nub implementation, material can be evaporated in four directions, with oxidation performed in between the third and fourth evaporations, to contact leads and form a Josephson junction.

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