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    EFFICIENT PHOTONIC CIRCUITS FOR LIQUID-COOLED HIGH-DENSITY DATACENTERS
    1.
    发明申请
    EFFICIENT PHOTONIC CIRCUITS FOR LIQUID-COOLED HIGH-DENSITY DATACENTERS 有权

    公开(公告)号：US20210026066A1

    公开(公告)日：2021-01-28

    申请号：US16518131

    申请日：2019-07-22

    Applicant: International Business Machines Corporation

    Inventor： Tymon Barwicz ,  Douglas M. Gill ,  William M. Green ,  Jason S. Orcutt ,  Jessie C. Rosenberg ,  Eugen Schenfeld ,  Chi Xiong

    IPC: G02B6/12 ,  G02B6/30 ,  H05K7/20

    Abstract: Photonic circuits are disclosed having an efficient optical power distribution network. Laser chips (InP) having different wavelengths are flip-chip assembled near the center of a silicon photonic chip. Each InP die has multiple optical lanes, but a given die has only one wavelength. Waveguides formed in the photonic chip are optically connected to the lanes, and fan out to form multiple waveguide sets, where each waveguide set has one of the waveguides from each of the different wavelengths, i.e., one waveguide from each InP die. The waveguide network is optimized to minimize the number of crossings that any given waveguide may have, and no waveguide having a particular wavelength crosses another waveguide of the same wavelength. The unique arrangements of light sources and waveguides allows the use of a smaller number of more intense laser sources, particularly in applications such as performance-optimized datacenters where liquid cooling systems may be leveraged.

    Material structures for front-end of the line integration of optical polarization splitters and rotators
    5.
    发明授权
    Material structures for front-end of the line integration of optical polarization splitters and rotators 有权
    光学偏振分离器和旋转器的线路集成前端的材料结构

    公开(公告)号：US08942519B2

    公开(公告)日：2015-01-27

    申请号：US13971390

    申请日：2013-08-20

    Applicant: International Business Machines Corporation

    Inventor： Tymon Barwicz ,  Douglas M. Gill ,  William M. Green ,  Marwan H. Khater ,  Yurii A. Vlasov

    IPC: G02B6/00 ,  G02B6/12 ,  G02B6/126

    CPC classification number: G02B6/126

    Abstract: A polarization splitter and rotator of a wafer chip, an opto-electronic device and method of use is disclosed. The first waveguide of the wafer chip is configured to receive an optical signal from an optical device and propagate a transverse electric eigenstate of the received optical signal. The second waveguide is configured to receive a transverse magnetic eigenstate of the received optical signal from the first waveguide. The second waveguide includes a splitter end, a middle section and a rotator end, wherein the splitter end includes a layer of polycrystalline silicon, a layer of silicon oxide and a layer of silicon nitride, the rotated end includes a layer single crystal silicon, a layer silicon oxide and a layer of silicon nitride, and the middle section includes layers of single crystal silicon, silicon oxide polycrystalline silicon and silicon nitride.

    Abstract translation: 公开了一种晶片芯片的偏振分离器和旋转器，光电器件和使用方法。 晶片芯片的第一波导被配置为从光学装置接收光信号并传播所接收的光信号的横向电本质状态。 第二波导被配置为从第一波导接收接收的光信号的横向磁本征状态。 第二波导包括分流器端部，中间部分和旋转器端部，其中分流器端部包括多晶硅层，氧化硅层和氮化硅层，旋转端包括层单晶硅， 层状氧化硅和氮化硅层，中间部分包括单晶硅层，氧化硅多晶硅层和氮化硅层。

    Material structures for front-end of the line integration of optical polarization splitters and rotators
    6.
    发明授权
    Material structures for front-end of the line integration of optical polarization splitters and rotators 有权
    光学偏振分离器和旋转器的线路集成前端的材料结构

    公开(公告)号：US08923665B2

    公开(公告)日：2014-12-30

    申请号：US13835725

    申请日：2013-03-15

    Applicant: International Business Machines Corporation

    Inventor： Tymon Barwicz ,  Douglas M. Gill ,  William M. Green ,  Marwan H. Khater ,  Yurii A. Vlasov

    IPC: G02B6/12 ,  G02B6/126

    CPC classification number: G02B6/126

    Abstract: A polarization splitter and rotator of a wafer chip, an opto-electronic device and method of use is disclosed. The first waveguide of the wafer chip is configured to receive an optical signal from an optical device and propagate a transverse electric eigenstate of the received optical signal. The second waveguide is configured to receive a transverse magnetic eigenstate of the received optical signal from the first waveguide. The second waveguide includes a splitter end, a middle section and a rotator end, wherein the splitter end includes a layer of polycrystalline silicon, a layer of silicon oxide and a layer of silicon nitride, the rotated end includes a layer single crystal silicon, a layer silicon oxide and a layer of silicon nitride, and the middle section includes layers of single crystal silicon, silicon oxide polycrystalline silicon and silicon nitride.

    Abstract translation: 公开了一种晶片芯片的偏振分离器和旋转器，光电器件和使用方法。 晶片芯片的第一波导被配置为从光学装置接收光信号并传播所接收的光信号的横向电本质状态。 第二波导被配置为从第一波导接收接收的光信号的横向磁本征状态。 第二波导包括分流器端部，中间部分和旋转器端部，其中分流器端部包括多晶硅层，氧化硅层和氮化硅层，旋转端包括层单晶硅， 层状氧化硅和氮化硅层，中间部分包括单晶硅层，氧化硅多晶硅层和氮化硅层。

    MATERIAL STRUCTURES FOR FRONT-END OF THE LINE INTEGRATION OF OPTICAL POLARIZATION SPLITTERS AND ROTATORS
    7.
    发明申请
    MATERIAL STRUCTURES FOR FRONT-END OF THE LINE INTEGRATION OF OPTICAL POLARIZATION SPLITTERS AND ROTATORS 有权

    公开(公告)号：US20140270628A1

    公开(公告)日：2014-09-18

    申请号：US13835725

    申请日：2013-03-15

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Tymon Barwicz ,  Douglas M. Gill ,  William M. Green ,  Marwan H. Khater ,  Yurii A. Vlasov

    IPC: G02B6/126

    CPC classification number: G02B6/126

    Abstract: A polarization splitter and rotator of a wafer chip, an opto-electronic device and method of use is disclosed. The first waveguide of the wafer chip is configured to receive an optical signal from an optical device and propagate a transverse electric eigenstate of the received optical signal. The second waveguide is configured to receive a transverse magnetic eigenstate of the received optical signal from the first waveguide. The second waveguide includes a splitter end, a middle section and a rotator end, wherein the splitter end includes a layer of polycrystalline silicon, a layer of silicon oxide and a layer of silicon nitride, the rotated end includes a layer single crystal silicon, a layer silicon oxide and a layer of silicon nitride, and the middle section includes layers of single crystal silicon, silicon oxide polycrystalline silicon and silicon nitride.

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