公开(公告)号：US20150187871A1

公开(公告)日：2015-07-02

申请号：US14644607

申请日：2015-03-11

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Christian Hecht ,  Roland Rupp ,  Rudolf Elpelt

IPC: H01L29/06 ,  H01L21/265 ,  H01L29/16

CPC classification number: H01L29/0623 ,  H01L21/046 ,  H01L21/2652 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/872

Abstract: A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer including a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including the first conductivity type.

Abstract translation: 碳化硅器件包括包括第一导电类型的外延碳化硅层和位于包含第二导电类型的外延碳化硅层内的埋入横向碳化硅边缘终止区。 埋入的侧面碳化硅边缘终端区域由包括第一导电类型的碳化硅表面层覆盖。

公开(公告)号：US20250063775A1

公开(公告)日：2025-02-20

申请号：US18794077

申请日：2024-08-05

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Caspar Leendertz ,  Rudolf Elpelt ,  Björn Fischer

IPC: H01L29/06 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a transistor having a plurality of gate trenches formed in a semiconductor substrate, the gate trenches patterning the semiconductor substrate into ridges. The transistor further includes a gate electrode arranged in at least one of the gate trenches. A source region, a channel region and a part of a current spread region are arranged in the ridges. The semiconductor device further includes a superjunction structure arranged at a larger distance to the source region than the channel region. The superjunction structure includes a first compensation region of the first conductivity type and a second compensation region of the second conductivity type. A doping concentration of the doped portion of the second conductivity type of the channel region decreases in a second horizontal direction intersecting the first horizontal direction from a region close to the gate electrode to a central portion of the ridge.

公开(公告)号：US20240194778A1

公开(公告)日：2024-06-13

申请号：US18080427

申请日：2022-12-13

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Frank Hille ,  Caspar Leendertz ,  Armin Willmeroth

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/266 ,  H01L29/06 ,  H01L29/16

CPC classification number: H01L29/7811 ,  H01L21/26513 ,  H01L21/266 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1608

Abstract: A semiconductor device includes: a semiconductor substrate having an active device region that includes a plurality of device cells and a termination region between the active device region and an edge of the semiconductor substrate; a field termination structure in the termination region and including a continuous region of a first conductivity type and a plurality of rings of the first conductivity type in the continuous region and having a higher average doping concentration than the continuous region; and a charge balance structure in the active device region and including interleaved columns of the first conductivity type and of a second conductivity type opposite the first conductivity type. The charge balance structure extends into the termination region below the field termination structure such that at least an outermost one of the columns of the first conductivity type is connected to the continuous region of the field termination structure.

公开(公告)号：US11757031B2

公开(公告)日：2023-09-12

申请号：US16998484

申请日：2020-08-20

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Caspar Leendertz

IPC: H01L29/78 ,  H01L29/872 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/7806 ,  H01L29/1608 ,  H01L29/66734 ,  H01L29/872

Abstract: According to an embodiment of a semiconductor device, the device includes: a plurality of device cells formed in a semiconductor substrate, each device cell including a transistor structure and a Schottky diode structure; and a superjunction structure that includes alternating regions of a first conductivity type and of a second conductivity type formed in the semiconductor substrate. For each transistor structure, a channel region of the transistor structure and a Schottky metal region of an adjacent one of the Schottky diode structures are interconnected by semiconductor material of the first conductivity type without interruption by any of the regions of the second conductivity type of the superjunction structure, the semiconductor material of the first conductivity type including one or more of the regions of the first conductivity type of the superjunction structure.

公开(公告)号：US11626477B2

公开(公告)日：2023-04-11

申请号：US17375034

申请日：2021-07-14

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Thomas Basler ,  Wolfgang Bergner ,  Rudolf Elpelt ,  Romain Esteve ,  Michael Hell ,  Daniel Kueck ,  Caspar Leendertz ,  Dethard Peters ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/10

Abstract: A semiconductor component includes: gate structures extending from a first surface into an SiC semiconductor body; a drift zone of a first conductivity type formed in the SiC semiconductor body; first mesas and second mesas arranged between the gate structures in the SiC semiconductor body; body areas of a second conductivity type arranged in the first mesas and the second mesas, the body areas each adjoining a first side wall of one of the gate structures; first shielding areas of the second conductivity type adjoining a second side wall of one of the gate structures; second shielding areas of the second conductivity type adjoining the body areas in the second mesas; and diode areas of the conductivity type of the drift zone, the diode areas forming Schottky contacts with a load electrode between the first shielding areas and the second shielding areas.

公开(公告)号：US11552170B2

公开(公告)日：2023-01-10

申请号：US17031358

申请日：2020-09-24

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Thomas Ganner ,  Caspar Leendertz

IPC: H01L29/10 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a silicon carbide semiconductor body. A first shielding region of a first conductivity type is connected to a first contact at a first surface of the silicon carbide semiconductor body. A current spread region of a second conductivity type is connected to a second contact at a second surface of the silicon carbide semiconductor body. A doping concentration profile of the current spread region includes peaks along a vertical direction perpendicular to the first surface. A doping concentration of one peak or one peak-group of the peaks is at least 50% higher than a doping concentration of any other peak of the current spread region. A vertical distance between the one peak or the one peak-group of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region.

公开(公告)号：US11380756B2

公开(公告)日：2022-07-05

申请号：US16733329

申请日：2020-01-03

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Rudolf Elpelt ,  Romain Esteve ,  Thomas Ganner ,  Jens Peter Konrath ,  Larissa Wehrhahn-Kilian

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47

Abstract: A silicon carbide device includes a silicon carbide body including a source region of a first conductivity type, a cathode region of the first conductivity type and separation regions of a second conductivity type. A stripe-shaped gate structure extends along a first direction and adjoins the source region and the separation regions. The silicon carbide device includes a first load electrode. Along the first direction, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region. The source region and the first load electrode form an ohmic contact. The first load electrode and the cathode region form a Schottky contact.

公开(公告)号：US20220199766A1

公开(公告)日：2022-06-23

申请号：US17505716

申请日：2021-10-20

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Caspar Leendertz

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/78 ,  H01L29/872 ,  H01L29/808 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/66

Abstract: A semiconductor device includes: a SiC substrate; a device structure in or on the SiC substrate and subject to an electric field during operation of the semiconductor device; a current-conduction region of a first conductivity type in the SiC substrate adjoining the device structure; and a shielding region of a second conductivity type laterally adjacent to the current-conduction region and configured to at least partly shield the device structure from the electric field. The shielding region has a higher net doping concentration than the current-conduction region, and has a length (L) measured from a first position which corresponds to a bottom of the device structure to a second position which corresponds to a bottom of the shielding region. The current-conduction region has a width (d) measured between opposing lateral sides of the current-conduction region, and L/d is in a range of 1 to 10.

公开(公告)号：US11367775B1

公开(公告)日：2022-06-21

申请号：US17128745

申请日：2020-12-21

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Caspar Leendertz

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/78 ,  H01L21/265 ,  H01L29/66 ,  H01L29/47

Abstract: A semiconductor device includes: a SiC substrate; a device structure in or on the SiC substrate and subject to an electric field during operation of the semiconductor device; a current-conduction region of a first conductivity type in the SiC substrate below and adjoining the device structure; and a shielding region of a second conductivity type laterally adjacent to the current-conduction region and configured to at least partly shield the device structure from the electric field. The shielding region has a higher net doping concentration than the current-conduction region, and has a length (L) measured from a first position which corresponds to a bottom of the device structure to a second position which corresponds to a bottom of the shielding region. The current-conduction region has a width (d) measured between opposing lateral sides of the current-conduction region, and L/d is in a range of 1 to 10.

公开(公告)号：US20210134960A1

公开(公告)日：2021-05-06

申请号：US17080950

申请日：2020-10-27

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Rudolf Elpelt ,  Anton Mauder

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/66 ,  H01L29/04

Abstract: A silicon carbide device includes a silicon carbide body having a hexagonal crystal lattice with a c-plane and with further main planes. The further main planes include a-planes and m-planes. A mean surface plane of the silicon carbide body is tilted to the c-plane by an off-axis angle. The silicon carbide body includes a columnar portion with column sidewalls. At least three of the column sidewalls are oriented along a respective one of the further main planes. A trench gate structure is in contact with the at least three of the column sidewalls.