公开(公告)号：US09696577B2

公开(公告)日：2017-07-04

申请号：US14931109

申请日：2015-11-03

Applicant: Japan Display Inc.

Inventor： Muneharu Akiyoshi ,  Kisako Ninomiya ,  Yasushi Kawata ,  Hirotaka Hayashi ,  Arichika Ishida

IPC: G02F1/1333 ,  G02F1/1335 ,  G02F1/1362

CPC classification number: G02F1/133502 ,  G02F1/1362 ,  G02F1/136209

Abstract: According to one embodiment, a reflective type liquid crystal display device provided can suppress light leakage into a thin film transistor due to entry of extraneous light. An array substrate includes a glass substrate, a plurality of thin film transistors, a plurality of pixel electrodes, and a metal film. The plurality of thin film transistors are provided to the glass substrate. The plurality of pixel electrodes are spaced apart from each other and driven by the thin film transistors. The plurality of pixel electrodes reflect extraneous light entering the reflective type display device from a counter substrate side. The metal film is provided between a gap between the pixel electrodes and each of the thin film transistors.

公开(公告)号：US09647134B2

公开(公告)日：2017-05-09

申请号：US15051786

申请日：2016-02-24

Applicant: Japan Display Inc.

Inventor： Masato Hiramatsu ,  Masayoshi Fuchi ,  Arichika Ishida

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02 ,  H01L21/465 ,  H01L21/443 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/443 ,  H01L21/465 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78696

Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

公开(公告)号：US20160027921A1

公开(公告)日：2016-01-28

申请号：US14804395

申请日：2015-07-21

Applicant: Japan Display Inc.

Inventor： Hidekazu MIYAKE ,  Arichika Ishida ,  Norihiro Uemura ,  Hiroto Miyake ,  Isao Suzumura ,  Yohei Yamaguchi

IPC: H01L29/786 ,  H01L29/24 ,  G02F1/1368 ,  H01L27/12

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: According to one embodiment, a display device includes thin-film transistor. The thin-film transistor includes a first semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a second semiconductor layer, a first electrode and a second electrode. The gap between the bottom surface of the gate electrode and the upper surface of the first channel region of the first semiconductor layer is larger than the gap between the upper surface of the gate electrode and the bottom surface of the second channel region of the second semiconductor layer.

Abstract translation: 根据一个实施例，显示装置包括薄膜晶体管。 薄膜晶体管包括第一半导体层，第一绝缘膜，栅电极，第二绝缘膜，第二半导体层，第一电极和第二电极。 栅电极的底表面和第一半导体层的第一沟道区的上表面之间的间隙大于栅电极的上表面和第二半导体的第二沟道区的底表面之间的间隙 层。

公开(公告)号：US20140346497A1

公开(公告)日：2014-11-27

申请号：US14256267

申请日：2014-04-18

Applicant: Japan Display Inc.

Inventor： Masato HIRAMATSU ,  Masayoshi Fuchi ,  Arichika Ishida

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/443 ,  H01L21/465 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78696

Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

Abstract translation: 根据一个实施例，薄膜晶体管包括形成在衬底的一部分上的氧化物半导体层，形成在氧化物半导体层上的二氧化硅膜的第一栅极绝缘膜和通过CVD法的硅烷基源 气体，通过CVD法用TEOS源气体形成在第一栅极绝缘膜上的二氧化硅膜的第二栅极绝缘膜，以及形成在第二栅极绝缘膜上的栅电极。