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公开(公告)号：US08811920B2
公开(公告)日：2014-08-19
申请号：US13287713
申请日：2011-11-02
Applicant: Robert Deuchars , Jean-Christophe Berchtold , Joseph Hubert Colles , David Zimlich , Chris Levesque , William David Southcombe , David E. Jones , Scott Yoder , Terry J. Stockert
Inventor： Robert Deuchars , Jean-Christophe Berchtold , Joseph Hubert Colles , David Zimlich , Chris Levesque , William David Southcombe , David E. Jones , Scott Yoder , Terry J. Stockert
CPC classification number: H03F1/0227 , H03F1/0261 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/602 , H03F3/72 , H03F2200/171 , H03F2200/222 , H03F2200/27 , H03F2200/318 , H03F2200/336 , H03F2200/387 , H03F2200/411 , H03F2200/414 , H03F2200/417 , H03F2200/451 , H03F2200/504 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2203/21106 , H03F2203/21142 , H03F2203/21157
Abstract: A direct current (DC)-DC converter having a DC-DC converter semiconductor die and an alpha flying capacitive element is disclosed. The DC-DC converter semiconductor die includes a first series alpha switching element, a second series alpha switching element, a first alpha flying capacitor connection node, which is about over the second series alpha switching element, and a second alpha flying capacitor connection node, which is about over the first series alpha switching element. The alpha flying capacitive element is electrically coupled between the first alpha flying capacitor connection node and the second alpha flying capacitor connection node. By locating the first alpha flying capacitor connection node and the second alpha flying capacitor connection node about over the second series alpha switching element and the first series alpha switching element, respectively, lengths of transient current paths may be minimized, thereby reducing noise and potential interference.
Abstract translation: 公开了具有DC-DC转换器半导体管芯和α型飞行电容元件的直流（DC）-DC转换器。 DC-DC转换器半导体管芯包括第一系列α开关元件，第二串联α开关元件，大约在第二串联α开关元件上方的第一α型飞秒电容器连接节点和第二α型飞秒电容器连接节点， 这是关于超过第一系列α开关元件。 α飞行电容元件电耦合在第一α型飞秒电容器连接节点和第二α型飞秒电容器连接节点之间。 通过分别在第二系列α开关元件和第一系列α开关元件周围定位第一个α飞秒电容器连接节点和第二个α飞秒电容器连接节点，可以将瞬态电流路径的长度最小化，从而降低噪声和潜在干扰 。
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公开(公告)号：US08706063B2
公开(公告)日：2014-04-22
申请号：US13304943
申请日：2011-11-28
Applicant: Hirofumi Honjo , Brian Baxter , Stuart Williams , Roman Zbigniew Arkiszewski , David E. Jones , Chris Levesque , William David Southcombe , Scott Yoder , Terry J. Stockert
Inventor： Hirofumi Honjo , Brian Baxter , Stuart Williams , Roman Zbigniew Arkiszewski , David E. Jones , Chris Levesque , William David Southcombe , Scott Yoder , Terry J. Stockert
CPC classification number: H03F1/0227 , H03F1/0261 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/602 , H03F3/72 , H03F2200/171 , H03F2200/222 , H03F2200/27 , H03F2200/318 , H03F2200/336 , H03F2200/387 , H03F2200/411 , H03F2200/414 , H03F2200/417 , H03F2200/451 , H03F2200/504 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2203/21106 , H03F2203/21142 , H03F2203/21157
Abstract: A power amplifier (PA) envelope power supply, which provides an envelope power supply signal to radio frequency (RF) PA circuitry, and a process to prevent undershoot of the PA envelope power supply is disclosed. The process includes determining if an envelope control signal to the PA envelope power supply has a step change from a high magnitude to a low magnitude that exceeds a step change limit. Such a step change may cause undershoot of the PA envelope power supply. As such, if the step change exceeds the step change limit, the envelope control signal is modified to use an intermediate magnitude for period of time. Otherwise, if the step change does not exceed the step change limit, the envelope control signal is not modified.
Abstract translation: 公开了一种向射频（RF）PA电路提供包络电源信号的功率放大器（PA）封装电源，以及防止PA封装电源的下冲的过程。 该过程包括确定到PA包络电源的包络控制信号是否具有从高幅度到超过阶梯变化极限的低幅值的阶跃变化。 这种改变可能会导致PA信封电源的下冲。 这样，如果阶梯变化超过阶梯变化极限，则包络控制信号被修改为在一段时间内使用中间幅度。 否则，如果步进更改不超过阶跃变化限制，则不会更改包络控制信号。
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43.发明授权Split current current digital-to-analog converter (IDAC) for dynamic device switching (DDS) of an RF PA stage 有权分流电流数字到模拟转换器（IDAC）用于RF PA级的动态器件切换（DDS）公开(公告)号：US08565694B2
公开(公告)日：2013-10-22
申请号：US13289379
申请日：2011-11-04
Applicant: David E. Jones , Chris Levesque , William David Southcombe , Scott Yoder , Terry J. Stockert
Inventor： David E. Jones , Chris Levesque , William David Southcombe , Scott Yoder , Terry J. Stockert
CPC classification number: H03F1/0227 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/245 , H03F2200/18 , H03F2200/336 , H04B2001/0416
Abstract: A split current current digital-to-analog converter (IDAC) and a radio frequency (RF) power amplifier (PA) stage are disclosed. The split current IDAC operates in a selected one of a group of DDS operating modes and provides a group of array bias signals based on the selected one of the group of DDS operating modes. Each of the group of array bias signals is a current signal. The RF PA stage includes a group of arrays of amplifying transistor elements. The RF PA stage biases at least one of the group of arrays of amplifying transistor elements based on the group of array bias signals. Further, the RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using at least one of the group of arrays of amplifying transistor elements that is biased.
Abstract translation: 公开了分流电流数模转换器（IDAC）和射频（RF）功率放大器（PA）级。 分流电流IDAC以一组DDS操作模式中的所选择的一个操作，并且基于所选择的一组DDS操作模式提供一组阵列偏置信号。 阵列偏置信号组中的每一个是电流信号。 RF PA级包括一组放大晶体管元件阵列。 RF PA级基于阵列偏置信号组来偏置放大晶体管元件的一组阵列中的至少一个。 此外，RF PA级接收并放大RF级输入信号，以使用被偏置的放大晶体管元件的阵列组中的至少一个来提供RF级输出信号。
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公开(公告)号：US08559898B2
公开(公告)日：2013-10-15
申请号：US13287735
申请日：2011-11-02
Applicant: David E. Jones , Chris Levesque , William David Southcombe , Scott Yoder , Terry J. Stockert
Inventor： David E. Jones , Chris Levesque , William David Southcombe , Scott Yoder , Terry J. Stockert
CPC classification number: H03F1/0227 , H03F1/0261 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/602 , H03F3/72 , H03F2200/171 , H03F2200/222 , H03F2200/27 , H03F2200/318 , H03F2200/336 , H03F2200/387 , H03F2200/411 , H03F2200/414 , H03F2200/417 , H03F2200/451 , H03F2200/504 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2203/21106 , H03F2203/21142 , H03F2203/21157
Abstract: A radio frequency (RF) power amplifier (PA) amplifying transistor of an RF PA stage and an RF PA temperature compensating bias transistor of the RF PA stage are disclosed. The RF PA amplifying transistor includes a first array of amplifying transistor elements and a second array of amplifying transistor elements. The RF PA temperature compensating bias transistor provides temperature compensation of bias of the RF PA amplifying transistor. Further, the RF PA temperature compensating bias transistor is located between the first array and the second array. As such, the RF PA temperature compensating bias transistor is thermally coupled to the first array and the second array. The RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor.
Abstract translation: 公开了RF PA级的射频（RF）功率放大器（PA）放大晶体管和RF PA级的RF PA温度补偿偏置晶体管。 RF PA放大晶体管包括放大晶体管元件的第一阵列和放大晶体管元件的第二阵列。 RF PA温度补偿偏置晶体管提供RF PA放大晶体管的偏置的温度补偿。 此外，RF PA温度补偿偏置晶体管位于第一阵列和第二阵列之间。 因此，RF PA温度补偿偏置晶体管热耦合到第一阵列和第二阵列。 RF PA级接收并放大RF级输入信号，以使用RF PA放大晶体管提供RF级输出信号。
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公开(公告)号：US08489048B2
公开(公告)日：2013-07-16
申请号：US13304762
申请日：2011-11-28
Applicant: Roman Zbigniew Arkiszewski , Brian Baxter , Stuart Williams , Hirofumi Honjo , William David Southcombe , David E. Jones , Chris Levesque , Scott Yoder , Terry J. Stockert
Inventor： Roman Zbigniew Arkiszewski , Brian Baxter , Stuart Williams , Hirofumi Honjo , William David Southcombe , David E. Jones , Chris Levesque , Scott Yoder , Terry J. Stockert
Abstract: Power amplifier (PA) control circuitry and PA bias circuitry are disclosed. During one slot of a multislot transmit burst from radio frequency (RF) PA circuitry, the PA control circuitry selects one PA bias level of the RF PA circuitry and the RF PA circuitry has one output power level. The RF PA circuitry has a next output power level during an adjacent next slot of the multislot transmit burst. If the one output power level exceeds the next output power level by more than a power drop limit, then the PA control circuitry maintains the one PA bias level during the adjacent next slot. If the one output power level significantly exceeds the next output power level, but by less than the power drop limit, then the PA control circuitry selects a next PA bias level, which is less than the one PA bias level, during the adjacent next slot.
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Patent Agency Ranking
公开(公告)号：US20120299646A1
公开(公告)日：2012-11-29
申请号：US13304796
申请日：2011-11-28
Applicant: William David Southcombe , Jason Millard , Chris Levesque , Brian Baxter , Roman Zbigniew Arkiszewski , David E. Jones , Scott Yoder , Terry J. Stockert
Inventor： William David Southcombe , Jason Millard , Chris Levesque , Brian Baxter , Roman Zbigniew Arkiszewski , David E. Jones , Scott Yoder , Terry J. Stockert
IPC: H03G3/20
CPC classification number: H03F1/0227 , H03F1/0261 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/602 , H03F3/72 , H03F2200/171 , H03F2200/222 , H03F2200/27 , H03F2200/318 , H03F2200/336 , H03F2200/387 , H03F2200/411 , H03F2200/414 , H03F2200/417 , H03F2200/451 , H03F2200/504 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2203/21106 , H03F2203/21142 , H03F2203/21157
Abstract: A power amplifier (PA) envelope power supply and a process to select a converter operating mode of the PA envelope power supply are disclosed. The PA envelope power supply operates in one of a first converter operating mode and a second converter operating mode. The process for selecting the converter operating mode is based on a selected communications mode of a radio frequency (RF) communications system, a target output power from RF PA circuitry of the RF communications system, and a direct current (DC) power supply voltage.
Abstract translation: 公开了功率放大器（PA）封装电源和选择PA封装电源的转换器工作模式的过程。 PA包络电源以第一转换器工作模式和第二转换器工作模式工作。 用于选择转换器操作模式的过程基于射频（RF）通信系统的所选通信模式，来自RF通信系统的RF PA电路的目标输出功率和直流（DC）电源电压。
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47.发明申请公开(公告)号：US20120282869A1
公开(公告)日：2012-11-08
申请号：US13288517
申请日：2011-11-03
Applicant: William David Southcombe , Chris Levesque , Roman Zbigniew Arkiszewski , David E. Jones , Scott Yoder , Terry J. Stockert
Inventor： William David Southcombe , Chris Levesque , Roman Zbigniew Arkiszewski , David E. Jones , Scott Yoder , Terry J. Stockert
IPC: H04W88/00
CPC classification number: H03F1/0227 , H03F1/0261 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/602 , H03F3/72 , H03F2200/171 , H03F2200/222 , H03F2200/27 , H03F2200/318 , H03F2200/336 , H03F2200/387 , H03F2200/411 , H03F2200/414 , H03F2200/417 , H03F2200/451 , H03F2200/504 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2203/21106 , H03F2203/21142 , H03F2203/21157
Abstract: A power amplifier (PA) envelope power supply, radio frequency (RF) PA circuitry, and a process to select a converter operating mode of the PA envelope power supply based on linearity requirements of the RF PA circuitry is disclosed. The PA envelope power supply operates in one of a first converter operating mode and a second converter operating mode. The process for selecting the converter operating mode is based on a required degree of linearity of the RF PA circuitry. The PA envelope power supply provides an envelope power supply signal to the RF PA circuitry. Selection of the converter operating mode may provide efficient operation of the PA envelope power supply and the envelope power supply signal needed for proper operation of the RF PA circuitry.
Abstract translation: 公开了功率放大器（PA）封装电源，射频（RF）PA电路以及基于RF PA电路的线性要求来选择PA封装电源的转换器工作模式的过程。 PA包络电源以第一转换器工作模式和第二转换器工作模式工作。 用于选择转换器操作模式的过程基于RF PA电路所需的线性度。 PA封装电源为RF PA电路提供信号电源信号。 选择转换器工作模式可以提供PA封装电源的有效运行和RF PA电路正常工作所需的封装电源信号。
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公开(公告)号：US20120280752A1
公开(公告)日：2012-11-08
申请号：US13287735
申请日：2011-11-02
Applicant: David E. Jones , Chris Levesque , William David Southcombe , Scott Yoder , Terry J. Stockert
Inventor： David E. Jones , Chris Levesque , William David Southcombe , Scott Yoder , Terry J. Stockert
IPC: H03F3/04
CPC classification number: H03F1/0227 , H03F1/0261 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/602 , H03F3/72 , H03F2200/171 , H03F2200/222 , H03F2200/27 , H03F2200/318 , H03F2200/336 , H03F2200/387 , H03F2200/411 , H03F2200/414 , H03F2200/417 , H03F2200/451 , H03F2200/504 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2203/21106 , H03F2203/21142 , H03F2203/21157
Abstract: A radio frequency (RF) power amplifier (PA) amplifying transistor of an RF PA stage and an RF PA temperature compensating bias transistor of the RF PA stage are disclosed. The RF PA amplifying transistor includes a first array of amplifying transistor elements and a second array of amplifying transistor elements. The RF PA temperature compensating bias transistor provides temperature compensation of bias of the RF PA amplifying transistor. Further, the RF PA temperature compensating bias transistor is located between the first array and the second array. As such, the RF PA temperature compensating bias transistor is thermally coupled to the first array and the second array. The RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor.
Abstract translation: 公开了RF PA级的射频（RF）功率放大器（PA）放大晶体管和RF PA级的RF PA温度补偿偏置晶体管。 RFPA放大晶体管包括放大晶体管元件的第一阵列和放大晶体管元件的第二阵列。 RF PA温度补偿偏置晶体管提供RF PA放大晶体管的偏置的温度补偿。 此外，RF PA温度补偿偏置晶体管位于第一阵列和第二阵列之间。 因此，RF PA温度补偿偏置晶体管热耦合到第一阵列和第二阵列。 RF PA级接收并放大RF级输入信号，以使用RF PA放大晶体管提供RF级输出信号。
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49.发明申请LOOK-UP TABLE BASED CONFIGURATION OF MULTI-MODE MULTI-BAND RADIO FREQUENCY POWER AMPLIFIER CIRCUITRY 有权多模多频无线电频率放大器电路的基于表的配置公开(公告)号：US20120223774A1
公开(公告)日：2012-09-06
申请号：US13226814
申请日：2011-09-07
Applicant: William David Southcombe , David E. Jones , Chris Levesque , Scott Yoder , Terry J. Stockert
Inventor： William David Southcombe , David E. Jones , Chris Levesque , Scott Yoder , Terry J. Stockert
IPC: H03F3/68
CPC classification number: H03F1/0227 , H03F1/0261 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/602 , H03F3/72 , H03F2200/171 , H03F2200/222 , H03F2200/27 , H03F2200/318 , H03F2200/336 , H03F2200/387 , H03F2200/411 , H03F2200/414 , H03F2200/417 , H03F2200/451 , H03F2200/504 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2203/21106 , H03F2203/21142 , H03F2203/21157
Abstract: Circuitry, which includes multi-mode multi-band radio frequency (RF) power amplification circuitry, power amplifier (PA) control circuitry, and a PA-digital communications interface (DCI) is disclosed according to one embodiment of the circuitry. The PA control circuitry is coupled between the amplification circuitry and the PA-DCI, which is coupled to a digital communications bus, and configures the amplification circuitry. The amplification circuitry includes at least a first RF input and multiple RF outputs, such that at least some of the RF outputs are associated with multiple communications modes and at least some of the RF outputs are associated with multiple frequency bands. Configuration of the amplification circuitry associates one RF input with one RF output, and is correlated with configuration information defined by at least a first defined parameter set. The PA control circuitry stores at least a first look-up table (LUT), which provides the configuration information.
Abstract translation: 根据电路的一个实施例，公开了包括多模式多频带射频（RF）功率放大电路，功率放大器（PA）控制电路和PA-数字通信接口（DCI）的电路。 PA控制电路耦合在放大电路和耦合到数字通信总线的PA-DCI之间，并配置放大电路。 放大电路包括至少第一RF输入和多个RF输出，使得RF输出中的至少一些与多个通信模式相关联，并且至少一些RF输出与多个频带相关联。 放大电路的配置将一个RF输入与一个RF输出相关联，并且与由至少第一定义参数集定义的配置信息相关联。 PA控制电路至少存储提供配置信息的第一查询表（LUT）。
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50.发明申请ESD PROTECTION OF AN RF PA SEMICONDUCTOR DIE USING A PA CONTROLLER SEMICONDUCTOR DIE 有权使用PA控制器半导体器件的RF PA半导体器件的ESD保护公开(公告)号：US20120044606A1
公开(公告)日：2012-02-23
申请号：US13288373
申请日：2011-11-03
Applicant: David E. Jones , William David Southcombe , Chris Levesque , Scott Yoder , Terry J. Stockert
Inventor： David E. Jones , William David Southcombe , Chris Levesque , Scott Yoder , Terry J. Stockert
Abstract: A power amplifier (PA) controller semiconductor die and a first radio frequency (RF) PA semiconductor die are disclosed. The PA controller semiconductor die includes a first electro-static discharge (ESD) protection circuit, which ESD protects and provides a first ESD protected signal. The RF PA semiconductor die receives the first ESD protected signal. In one embodiment of the PA controller semiconductor die, the first ESD protected signal is an envelope power supply signal. The PA controller semiconductor die may be a Silicon complementary metal-oxide-semiconductor (CMOS) semiconductor die and the RF PA semiconductor die may be a Gallium Arsenide semiconductor die.
Abstract translation: 公开了功率放大器（PA）控制器半导体管芯和第一射频（RF）PA半导体管芯）。 PA控制器半导体管芯包括第一静电放电（ESD）保护电路，其ESD保护并提供第一ESD保护信号。 RF PA半导体管芯接收第一个ESD保护信号。 在PA控制器半导体管芯的一个实施例中，第一ESD保护信号是包络电源信号。 PA控制器半导体管芯可以是硅互补金属氧化物半导体（CMOS）半导体管芯，并且RF PA半导体管芯可以是砷化镓半导体管芯。
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