公开(公告)号：US07968447B2

公开(公告)日：2011-06-28

申请号：US12465013

申请日：2009-05-13

Applicant: Young-Ho Lee ,  Jae-Hwang Sim ,  Jae-Kwan Park ,  Mo-Seok Kim ,  Jong-Min Lee ,  Dong-Sik Lee

Inventor： Young-Ho Lee ,  Jae-Hwang Sim ,  Jae-Kwan Park ,  Mo-Seok Kim ,  Jong-Min Lee ,  Dong-Sik Lee

IPC: H01L21/4763

CPC classification number: H01L21/76816 ,  H01L21/31144

Abstract: A semiconductor device may include plugs disposed in a zigzag pattern, interconnections electrically connected to the plugs and a protection pattern which is interposed between the plugs and the interconnections to selectively expose the plugs. The interconnections may include a connection portion which is in contact with plugs selectively exposed by the protection pattern. A method of manufacturing a semiconductor device includes, after forming a molding pattern and a mask pattern, selectively etching a protection layer using the mask pattern to form a protection pattern exposing a plug.

Abstract translation: 半导体器件可以包括以锯齿形图案布置的插塞，电连接到插头的互连和插入在插头和互连之间的保护图案以选择性地暴露插头。 互连可以包括与由保护图案选择性地暴露的插头接触的连接部分。 制造半导体器件的方法包括：在形成模制图案和掩模图案之后，使用掩模图案选择性地蚀刻保护层以形成露出插头的保护图案。

公开(公告)号：US07893104B2

公开(公告)日：2011-02-22

申请号：US12041372

申请日：2008-03-03

Applicant: Jong-Min Lee ,  Dae-Wook Kim ,  Young-Doo Jun ,  Seong-Guen Oh

Inventor： Jong-Min Lee ,  Dae-Wook Kim ,  Young-Doo Jun ,  Seong-Guen Oh

IPC: A61K31/28 ,  A61K31/695 ,  A61K47/00

CPC classification number: B82Y30/00 ,  A01N59/16 ,  C07B2200/11 ,  C08J3/2053 ,  C08K3/36 ,  C08K5/548 ,  C08L39/06 ,  Y10T428/2993 ,  Y10T428/2998 ,  A01N25/04 ,  A01N25/08 ,  A01N25/12 ,  A01N25/34 ,  A01N2300/00

Abstract: Size-controlled immobilization of metal nano-clusters onto particles or nanoparticles is achieved using a polyol process. Polyol processing makes it possible to use thiol groups as a chemical protocol to functionalize the surface of particles, such as silica and polystyrene nanoparticles. Metal nano-clusters, such as silver, gold, platinum and palladium, nucleate and grow on the surface of the particles. The metal nano-clusters may be synthesized in a one-pot process from metal salts, nitrates, nitrites, sulfates, sulfites and the like. Any source of metal ions compatible with the polyol suspension and selected particles may be used. The size of immobilized metal nano-clusters may be controlled by additions of a poly(vinylpyrrolidone) or other polymer capable of regulating the metal ion reduction and nucleation process and by controlling concentration of metal ions, the nucleation and/or growth temperatures, and processing time.

Abstract translation: 使用多元醇工艺可以将金属纳米簇的尺寸控制固定在颗粒或纳米颗粒上。 多元醇加工使得可以使用硫醇基团作为化学方案来官能化颗粒表面，如二氧化硅和聚苯乙烯纳米颗粒。 金属纳米簇，例如银，金，铂和钯，在颗粒表面成核并生长。 金属纳米簇可以在一锅法中由金属盐，硝酸盐，亚硝酸盐，硫酸盐，亚硫酸盐等合成。 可以使用与多元醇悬浮液和选定颗粒相容的任何金属离子源。 固定金属纳米簇的大小可以通过加入聚（乙烯基吡咯烷酮）或其它能够调节金属离子还原和成核过程并通过控制金属离子浓度，成核和/或生长温度和加工的聚合物来控制 时间。

公开(公告)号：US20100298578A1

公开(公告)日：2010-11-25

申请号：US12563885

申请日：2009-09-21

Applicant: Jong-San Chang ,  Young-Kyu Hwang ,  Jung-Ho Lee ,  Jong-Min Lee ,  Min-Hee Jung

Inventor： Jong-San Chang ,  Young-Kyu Hwang ,  Jung-Ho Lee ,  Jong-Min Lee ,  Min-Hee Jung

IPC: C07D319/12 ,  C07F7/28 ,  C01G23/02 ,  B01J21/06

CPC classification number: C07D319/12

Abstract: The present disclosure discloses a catalyst for directly producing a lactide which is a cyclic ester used as a monomer for polylactides, and a method for directly producing a lactide using the catalyst, the method including the transesterification reaction between two molecules of an ester of lactic acid or a mixture containing the ester of lactic acid with a small amount of lactic acid and oligomer of lactic acid under an inert environment in the presence of a titanium-based catalyst or a catalyst mixture containing the titanium-based catalyst so as to produce lactide while simultaneously removing an alcohol (ROH) generated as a by-product. As compared to a conventional commercialized process, since the method for producing a lactide in accordance with the present disclosure is a novel process capable of directly producing the lactide from the ester of lactic acid, energy consumption is low and the lactide can be produced through a simple process showing a high yield while maintaining optical property (D-form or L-form optical isomer).

Abstract translation: 本公开公开了一种用于直接生产丙交酯的催化剂，其是用作聚交酯的单体的环状酯，以及使用该催化剂直接生产丙交酯的方法，包括两分子乳酸酯之间的酯交换反应的方法 或含有乳酸酯与少量乳酸和乳酸低聚物的混合物在惰性环境下，在钛基催化剂或含有钛基催化剂的催化剂混合物存在下，以产生丙交酯，同时 同时除去作为副产物产生的醇（ROH）。 与传统的商业化方法相比，由于根据本公开的制备丙交酯的方法是能够从乳酸酯直接生产丙交酯的新方法，能量消耗低，并且丙交酯可以通过 简单的方法在保持光学性质（D型或L型光学异构体）下显示高产率。

公开(公告)号：US07364977B2

公开(公告)日：2008-04-29

申请号：US10857655

申请日：2004-05-28

Applicant: Byoung-Gue Min ,  Kyung-Ho Lee ,  Seong-Il Kim ,  Jong-Min Lee ,  Chul-Won Ju

Inventor： Byoung-Gue Min ,  Kyung-Ho Lee ,  Seong-Il Kim ,  Jong-Min Lee ,  Chul-Won Ju

IPC: H01L21/8222

CPC classification number: H01L29/66318 ,  H01L29/7371

Abstract: Disclosed are a heterojunction bipolar transistor and a method of fabricating the same. A first dielectric layer easily etched is deposited on the overall surface of a substrate before an isolation region is defined. The first dielectric layer and a sub-collector layer are selectively etched, and then a second dielectric layer etched at a low etch rate is deposited on the overall surface of the substrate. Via holes are formed in the first and second dielectric layers, and then the first dielectric layer is removed using a difference between etch characteristics of the first and second dielectric layers. Accordingly, a reduction in power gain, generated at the interface of a compound semiconductor and a dielectric insulating layer (the second dielectric layer), can be eliminated.

Abstract translation: 公开了异质结双极晶体管及其制造方法。 在限定隔离区之前，易于蚀刻的第一电介质层沉积在基板的整个表面上。 选择性地蚀刻第一介电层和次集电极层，然后以低蚀刻速率蚀刻的第二电介质层沉积在基板的整个表面上。 在第一和第二电介质层中形成通孔，然后使用第一和第二电介质层的蚀刻特性之间的差异去除第一介电层。 因此，可以消除在化合物半导体和介电绝缘层（第二介电层）的界面处产生的功率增益的降低。

公开(公告)号：US20070085128A1

公开(公告)日：2007-04-19

申请号：US11608672

申请日：2006-12-08

Applicant: Dong-Sauk KIM ,  Ho-Seok Lee ,  Byung-Jun Park ,  Il-Young Kwon ,  Jong-Min Lee ,  Hyeong-Soo Kim ,  Jin-Woong Kim ,  Hyung-Bok Choi ,  Dong-Woo Shin

Inventor： Dong-Sauk KIM ,  Ho-Seok Lee ,  Byung-Jun Park ,  Il-Young Kwon ,  Jong-Min Lee ,  Hyeong-Soo Kim ,  Jin-Woong Kim ,  Hyung-Bok Choi ,  Dong-Woo Shin

IPC: H01L29/76

CPC classification number: H01L27/10855 ,  H01L27/0207 ,  H01L27/10814

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed that are capable of preventing a short of lower electrodes caused by a leaning or lifting phenomenon while forming the lower electrodes and securing enough capacitance of a capacitor by widening an effective capacitor area. The inventive semiconductor device includes: a plurality of capacitor plugs disposed in an orderly separation distance; and a plurality of lower electrodes used for a capacitor and disposed in an orderly separation distance to be respectively connected with the capacitor plugs.

Abstract translation: 公开了半导体装置及其制造方法，其能够通过扩大有效的电容器面积来形成下部电极并且通过扩大电容器的足够的电容来防止由倾斜或提升现象引起的较短的下部电极。 本发明的半导体器件包括：以有序的间隔距离设置的多个电容器插头; 以及多个用于电容器的下电极，并且以与电容器插头分别连接的有序分隔距离设置。

公开(公告)号：US20060255238A1

公开(公告)日：2006-11-16

申请号：US11390253

申请日：2006-03-28

Applicant: Jong-Min Lee

Inventor： Jong-Min Lee

IPC: G01J1/32

CPC classification number: H01S5/0683 ,  H04N1/40037

Abstract: An apparatus and method of controlling emission of a laser beam in an image forming apparatus. The method includes generating a first reference voltage and a second reference voltage corresponding to a normal mode and a toner save mode, supplying one of the first reference voltage and the second reference voltage corresponding to a mode selection signal in a switching manner, generating a first control voltage and second control voltage to control emission of the laser beam, and supplying a drive current corresponding to one of the generated first and second control voltages to a laser diode to control intensity of the laser beam according to the selection mode.

Abstract translation: 一种在图像形成装置中控制激光束的发射的装置和方法。 该方法包括产生对应于正常模式和调色剂节省模式的第一参考电压和第二参考电压，以切换方式提供对应于模式选择信号的第一参考电压和第二参考电压之一，产生第一参考电压 控制电压和第二控制电压以控制激光束的发射，并将与生成的第一和第二控制电压中的一个相对应的驱动电流提供给激光二极管，以根据选择模式控制激光束的强度。

公开(公告)号：US20060116161A1

公开(公告)日：2006-06-01

申请号：US11249648

申请日：2005-10-13

Applicant: Tae-Wook Lee ,  Sung-Gu Kim ,  Yong-Chul Yoon ,  Jong-Min Lee ,  Bong-Seok Choi

Inventor： Tae-Wook Lee ,  Sung-Gu Kim ,  Yong-Chul Yoon ,  Jong-Min Lee ,  Bong-Seok Choi

IPC: H04M1/00

CPC classification number: H04N5/76 ,  H04N5/4401 ,  H04N5/907 ,  H04N21/41407 ,  H04N21/4325 ,  H04N21/4334 ,  H04N21/4341

Abstract: A digital broadcasting data reception unit receives digital broadcasting data. A multimedia module parses the digital broadcasting data into video and audio data to output the video and audio data. A terminal control unit receives the digital broadcasting data from the digital broadcasting data reception unit when it is transmitted to the multimedia module, and parses the received digital broadcasting data into the video and audio data. A memory unit stores the video and audio data into which the digital broadcasting data is parsed by the terminal control unit according to a control operation of the terminal control unit.

公开(公告)号：US06951795B2

公开(公告)日：2005-10-04

申请号：US10744048

申请日：2003-12-24

Applicant: Min-Yong Lee ,  Hoon-Jung Oh ,  Jong-Min Lee

Inventor： Min-Yong Lee ,  Hoon-Jung Oh ,  Jong-Min Lee

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/20 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01L28/84 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a storage node oxide layer having a hole for forming a storage node on a substrate; forming a silicon layer on the storage node oxide layer having the hole; forming a photoresist on the silicon layer such that the photoresist fills the hole; forming a storage node having a cylinder shape inside of the hole by removing the silicon layer disposed on an upper surface of the storage node oxide layer; ion-implanting an impurity onto head portions of the storage node under a state that the photoresist remains; removing the photoresist; and growing metastable-polysilicon (MPS) grains on inner walls of the storage node.

Abstract translation: 本发明涉及半导体器件的电容器的制造方法。 该方法包括以下步骤：在衬底上形成具有用于形成存储节点的孔的存储节点氧化物层; 在具有该孔的存储节点氧化物层上形成硅层; 在所述硅层上形成光致抗蚀剂，使得所述光致抗蚀剂填充所述孔; 通过去除设置在存储节点氧化物层的上表面上的硅层，形成在孔内部具有圆柱形状的存储节点; 在保留光致抗蚀剂的状态下将杂质离子注入存储节点的头部; 去除光致抗蚀剂; 并在存储节点的内壁上生长亚稳态多晶硅（MPS）晶粒。

公开(公告)号：US20050133820A1

公开(公告)日：2005-06-23

申请号：US10857655

申请日：2004-05-28

Applicant: Byoung-Gue Min ,  Kyung-Ho Lee ,  Seong-Il Kim ,  Jong-Min Lee ,  Chul-Won Ju

Inventor： Byoung-Gue Min ,  Kyung-Ho Lee ,  Seong-Il Kim ,  Jong-Min Lee ,  Chul-Won Ju

IPC: H01L21/331 ,  H01L29/737 ,  H01L29/739 ,  H01L21/8222 ,  H01L31/0328

CPC classification number: H01L29/66318 ,  H01L29/7371

Abstract: Disclosed are a heterojunction bipolar transistor and a method of fabricating the same. A first dielectric layer easily etched is deposited on the overall surface of a substrate before an isolation region is defined. The first dielectric layer and a sub-collector layer are selectively etched, and then a second dielectric layer etched at a low etch rate is deposited on the overall surface of the substrate. Via holes are formed in the first and second dielectric layers, and then the first dielectric layer is removed using a difference between etch characteristics of the first and second dielectric layers. Accordingly, a reduction in power gain, generated at the interface of a compound semiconductor and a dielectric insulating layer (the second dielectric layer), can be eliminated.

Abstract translation: 公开了异质结双极晶体管及其制造方法。 在限定隔离区之前，易于蚀刻的第一电介质层沉积在基板的整个表面上。 选择性地蚀刻第一介电层和次集电极层，然后以低蚀刻速率蚀刻的第二电介质层沉积在基板的整个表面上。 在第一和第二电介质层中形成通孔，然后使用第一和第二电介质层的蚀刻特性之间的差异去除第一介电层。 因此，可以消除在化合物半导体和介电绝缘层（第二介电层）的界面处产生的功率增益的降低。

公开(公告)号：US20050018525A1

公开(公告)日：2005-01-27

申请号：US10625277

申请日：2003-07-23

Applicant: Dong-Sauk Kim ,  Ho-Seok Lee ,  Byung-Jun Park ,  Il-Young Kwon ,  Jong-Min Lee ,  Hyeong-Soo Kim ,  Jin-Woong Kim ,  Hyung-Bok Choi ,  Dong-Woo Shin

Inventor： Dong-Sauk Kim ,  Ho-Seok Lee ,  Byung-Jun Park ,  Il-Young Kwon ,  Jong-Min Lee ,  Hyeong-Soo Kim ,  Jin-Woong Kim ,  Hyung-Bok Choi ,  Dong-Woo Shin

IPC: H01L21/8242 ,  G11C8/02 ,  H01L21/82 ,  H01L27/02 ,  H01L27/10 ,  H01L27/108

CPC classification number: H01L27/10855 ,  H01L27/0207 ,  H01L27/10814

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed that are capable of preventing a short of lower electrodes caused by a leaning or lifting phenomenon while forming the lower electrodes and securing enough capacitance of a capacitor by widening an effective capacitor area. The inventive semiconductor device includes: a plurality of capacitor plugs disposed in an orderly separation distance; and a plurality of lower electrodes used for a capacitor and disposed in an orderly separation distance to be respectively connected with the capacitor plugs.

Abstract translation: 公开了半导体装置及其制造方法，其能够通过扩大有效的电容器面积来形成下部电极并且通过扩大电容器的足够的电容来防止由倾斜或提升现象引起的较短的下部电极。 本发明的半导体器件包括：以有序的间隔距离设置的多个电容器插头; 以及多个用于电容器的下电极，并且以与电容器插头分别连接的有序分隔距离设置。