公开(公告)号：US20090011301A1

公开(公告)日：2009-01-08

申请号：US12161605

申请日：2007-01-31

申请人： Michihiko Matsumoto ,  Keisuke Suzuki

发明人： Michihiko Matsumoto ,  Keisuke Suzuki

IPC分类号： H01M8/04

CPC分类号： H01M8/04082 ,  H01M8/04313 ,  H01M8/04328 ,  H01M8/04358 ,  H01M8/04373 ,  H01M8/04388 ,  H01M8/04395 ,  H01M8/04425 ,  H01M8/04559 ,  H01M8/04589 ,  H01M8/04619 ,  H01M8/04626 ,  H01M8/04753 ,  H01M8/04761 ,  H01M8/0494 ,  H01M8/04947 ,  H01M2250/20 ,  Y02T90/32

摘要： A fuel cell system of a type that uses an accessory to supply fuel gas and oxidant gas to a fuel cell to generate electric power is disclosed. The fuel cell system includes a load parameter detector that detects a load parameter of the accessory. An actual accessory power computing device computes the electric power actually consumed by the accessory based on the detected load parameter. A steady accessory power computing device computes a steady accessory electric power consumption by the accessory that would be needed for supplying the fuel cell with gas to generate an amount of required electric power from the fuel cell system based on the steady electric power consumption characteristics of the accessory. An accessory power correcting device computes an electric power correction quantity such that the correction quantity may be combined with the steady accessory power to approach the actual accessory electric power consumption and the accessory power correcting device corrects the steady accessory electric power consumption based on the electric power correction quantity. A power generation controller controls the power generation of the fuel cell system based upon the required electric power to be generated by the fuel cell system and upon the computed steady accessory electric power consumption corrected by the accessory power correcting device.

摘要翻译： 公开了一种使用附件向燃料电池供应燃料气体和氧化剂气体以产生电力的燃料电池系统。 燃料电池系统包括检测附件的负载参数的负载参数检测器。 实际的配件功率计算设备基于检测到的负载参数来计算附件实际消耗的电力。 稳定的附属功率计算装置计算由附件提供的稳定的辅助电力消耗，该附件将为燃料电池供应气体而需要，以便根据燃料电池系统的稳定电力消耗特性产生来自燃料电池系统的所需电力量 附件。 附件功率校正装置计算电力校正量，使得校正量可以与稳定的附件功率组合以接近实际的辅助电力消耗，并且附件功率校正装置基于电力来校正稳定的附件电力消耗 校正量。 发电控制器基于由燃料电池系统产生的所需电力以及由附件功率校正装置校正的所计算的稳定附件电力消耗来控制燃料电池系统的发电。

公开(公告)号：US07342036B2

公开(公告)日：2008-03-11

申请号：US10932856

申请日：2004-09-02

申请人： Keisuke Suzuki ,  Jeffrey W. Bode

发明人： Keisuke Suzuki ,  Jeffrey W. Bode

IPC分类号： C07D261/20

CPC分类号： C07D261/20

摘要： The present invention provides isoxazole derivatives represented by the following formula (I): (wherein R1 represents a hydrogen atom, C1-C20 hydrocarbon group or —C(═O)OR1a (wherein R1a represents a C1-C10 alkyl group, etc.); R2 and R3 represent a hydrogen atom, halogen atom, hydroxy group, C1-C20 alkyl group or C6-C20 aryl group, etc.; R4 represents a hydrogen atom, halogen atom, hydroxy group, cyano group, nitro group, amino group, C1-C20 hydrocarbon group, C1-C10 alkoxy group, C1-C10 acyl group, 5- to 7-membered heterocyclic group, etc.; R5 represents a hydrogen atom, halogen atom, hydroxy group, optionally substituted C1-C20 hydrocarbon group, C1-C20 alkoxy group, 5- to 7-membered heterocyclic group, etc.; and, n represents 0, 1, 2, 3 or 4), and a process of producing the same. The compounds are useful as intermediates for synthesis of pharmaceutical compounds, agricultural chemicals, dye compounds, etc. having the isoxazole skeleton.

摘要翻译： 本发明提供由下式（I）表示的异恶唑衍生物：其中R 1表示氢原子，C 1 -C 20烷基， 烃基或-C（-O）OR 1a（其中R 1a表示C 1〜C 10 - 烷基等）; R 2和R 3代表氢原子，卤素原子，羟基，C 1 -C 3 > 20个烷基或C 6 -C 20芳基等; R 4表示氢原子，卤素原子 ，羟基，氰基，硝基，氨基，C 1 -C 20烃基，C 1 -C 10 C 1 -C 10烷基，C 1 -C 10酰基，5-至7-元杂环基等; R 5， 表示氢原子，卤素原子，羟基，任选取代的C 1 -C 20烃基，C 1 -C 20 烷氧基，5-至7-元杂环基等;和， n表示0,1,2,3或4）及其制备方法。 该化合物可用作合成具有异恶唑骨架的药物化合物，农药，染料化合物等的中间体。

公开(公告)号：US20080058530A1

公开(公告)日：2008-03-06

申请号：US11933937

申请日：2007-11-01

申请人： Keisuke Suzuki ,  Jeffrey Bode

发明人： Keisuke Suzuki ,  Jeffrey Bode

IPC分类号： C07D261/20

CPC分类号： C07D261/20

摘要： The present invention provides isoxazole derivatives represented by the following formula (I): (wherein R1 represents a hydrogen atom, C1-C20 hydrocarbon group or —C(═O)OR1a (wherein R1a represents a C1-C10 alkyl group, etc.); R2 and R3 represent a hydrogen atom, halogen atom, hydroxy group, C1-C20 alkyl group or C6-C20 aryl group, etc.; R4 represents a hydrogen atom, halogen atom, hydroxy group, cyano group, nitro group, amino group, C1-C20 hydrocarbon group, C1-C10 alkoxy group, C1-C10 acyl group, 5- to 7-membered heterocyclic group, etc.; R5 represents a hydrogen atom, halogen atom, hydroxy group, optionally substituted C1-C20 hydrocarbon group, C1-C20 alkoxy group, 5- to 7-membered heterocyclic group, etc.; and, n represents 0, 1, 2, 3 or 4), and a process of producing the same. The compounds are useful as intermediates for synthesis of pharmaceutical compounds, agricultural chemicals, dye compounds, etc. having the isoxazole skeleton.

摘要翻译： 本发明提供由下式（I）表示的异恶唑衍生物：其中R 1表示氢原子，C 1 -C 20烷基， 烃基或-C（-O）OR 1a（其中R 1a表示C 1〜C 10 - 烷基等）; R 2和R 3代表氢原子，卤素原子，羟基，C 1 -C 3 > 20个烷基或C 6 -C 20芳基等; R 4表示氢原子，卤素原子 ，羟基，氰基，硝基，氨基，C 1 -C 20烃基，C 1 -C 10 C 1 -C 10烷基，C 1 -C 10酰基，5-至7-元杂环基等; R 5， 表示氢原子，卤素原子，羟基，任选取代的C 1 -C 20烃基，C 1 -C 20 烷氧基，5-至7-元杂环基等;和， n表示0,1,2,3或4）及其制备方法。 该化合物可用作合成具有异恶唑骨架的药物化合物，农药，染料化合物等的中间体。

公开(公告)号：US07304002B2

公开(公告)日：2007-12-04

申请号：US10519451

申请日：2003-07-07

申请人： Tatsuo Nishita ,  Tsukasa Yonekawa ,  Keisuke Suzuki ,  Toru Sato

发明人： Tatsuo Nishita ,  Tsukasa Yonekawa ,  Keisuke Suzuki ,  Toru Sato

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02238 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/31658

摘要： A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film.In a method for oxidation of a surface of an object to be processed in a single processing container 8 which can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen species in a vacuum atmosphere, setting a processing pressure to 133 Pa or below, and setting a processing temperature to 400° C. or above. Under these conditions, high interplanar uniformity is maintained and oxide films with favorable film quality are obtained by oxidizing nitride films on the surfaces of a plurality of objects to be processed.

摘要翻译： 提供了一种用于氧化被处理物体的方法，其中氧化物膜可以提供良好的膜质量，并且可以通过氮化物膜的热氧化获得氮化物膜和氧化物膜的层压结构。

公开(公告)号：US20060280976A1

公开(公告)日：2006-12-14

申请号：US10568579

申请日：2004-08-16

申请人： Hiroaki Hashigaya ,  Keisuke Suzuki ,  Tetsuya Kamihara

发明人： Hiroaki Hashigaya ,  Keisuke Suzuki ,  Tetsuya Kamihara

IPC分类号： H01M8/04 ,  H01M8/12

CPC分类号： H01M8/04388 ,  H01M8/0258 ,  H01M8/0267 ,  H01M8/04089 ,  H01M8/04119 ,  H01M8/04134 ,  H01M8/04171 ,  H01M8/04291 ,  H01M8/04395 ,  H01M8/04402 ,  H01M8/0441 ,  H01M8/04417 ,  H01M8/04425 ,  H01M8/04432 ,  H01M8/04753 ,  H01M8/04768 ,  H01M8/04776 ,  H01M8/04783 ,  H01M8/04992 ,  H01M8/241 ,  H01M8/2457 ,  H01M2250/20 ,  Y02T90/32

摘要： A fuel cell stack (1) comprises a reactive gas passage (115, 1c, 116, 1a) and a water passage (117, 1b) substantially parallel thereto, and a reactive gas is humidified by water permeating from the water passage (117, 1b) through a porous member (112a, 112c). The pressure reduction amounts in the reactive gas passage (115, 1c, 116, 1a) and the water passage (117, 1b) are respectively calculated based on the power generation load of the stack (1). From the pressure reduction amounts in the water passage (117, 1b) and the reactive gas passage (115, 1c, 116, 1a), the pressure of the reactive gas supplied to the reactive gas passage (115, 1c, 116, 1a) is controlled such that the difference in pressure between the reactive gas passage (115, 1c, 116, 1a) and the water passage (117, 1b) is within a predetermined range, whereby the reactive gas is humidified in a desirable state.

摘要翻译： 燃料电池堆（1）包括反应性气体通道（115,1c，116,1a）和基本上平行于其的水通道（117,1b），并且反应性气体被从水通道 （117,1b）通过多孔构件（112a，112c）。 基于堆叠（1）的发电负荷，分别计算反应气体通路（115,1c，116,1a）和水通路（117,1b）中的减压量。 从水通路（117,1b）和反应气体通路（115,1c，116,1a）中的减压量，供应到反应气体通路（115,1c）的反应气体的压力， 116,1a）被控制为使得反应气体通道（115,1c，116,1a）和水通道（117,1b）之间的压力差在预定范围内，由此反应气体为 在理想状态下加湿。

公开(公告)号：US20060094248A1

公开(公告)日：2006-05-04

申请号：US10519451

申请日：2003-07-07

申请人： Tatsuo Nishita ,  Tsukasa Yonekawa ,  Keisuke Suzuki ,  Toru Sato

发明人： Tatsuo Nishita ,  Tsukasa Yonekawa ,  Keisuke Suzuki ,  Toru Sato

IPC分类号： H01L21/31

CPC分类号： H01L21/02238 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/31658

摘要： A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidation of a surface of an object to be processed in a single processing container 8 which can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen species in a vacuum atmosphere, setting a processing pressure to 133 Pa or below, and setting a processing temperature to 400° C. or above. Under these conditions, high interplanar uniformity is maintained and oxide films with favorable film quality are obtained by oxidizing nitride films on the surfaces of a plurality of objects to be processed.

摘要翻译： 提供了一种用于氧化被处理物体的方法，其中氧化物膜可以提供良好的膜质量，并且可以通过氮化物膜的热氧化获得氮化物膜和氧化物膜的层压结构。 在可以容纳多个待处理物体的单个处理容器8中对待处理物体的表面进行氧化的方法中，至少在所述表面露出氮化物膜，主要使用 活性羟基/氧物质，将处理压力设定在133Pa以下，将处理温度设定为400℃以上。 在这些条件下，通过在多个待处理物体的表面上氧化氮化物膜，维持高的晶面间均匀性，获得具有良好的膜质量的氧化物膜。

公开(公告)号：US20060003542A1

公开(公告)日：2006-01-05

申请号：US11157170

申请日：2005-06-21

申请人： Keisuke Suzuki ,  Kimiya Aoki ,  Kota Umezawa ,  Thomas Wilhelm Matthes ,  Uwe Wellhausen ,  Norbert Dyroff

发明人： Keisuke Suzuki ,  Kimiya Aoki ,  Kota Umezawa ,  Thomas Wilhelm Matthes ,  Uwe Wellhausen ,  Norbert Dyroff

IPC分类号： H01L21/76

CPC分类号： H01L21/02238 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/76235

摘要： A method of oxidizing an object to be processed comprises the steps of: providing an object to be processed W having a groove 4 formed on its surface in a processing vessel 22 capable of forming a vacuum therein, oxidizing the surface of the object to be processed in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. A temperature in the processing vessel during the oxidizing step is set to be equal to or less than 900° C. Thus, not only corner portions of shoulders of a trench (groove) but also corner portions of a bottom portion of the trench can be rounded to have curved surfaces so as to prevent a generation of facet.

摘要翻译： 氧化被处理物的方法包括以下步骤：提供待处理物体W，其具有在其表面上形成有能够在其中形成真空的处理容器22中的凹槽4，氧化被处理物体的表面 在包括通过将氧化性气体和还原性气体供应到处理容器中以使气体相互作用而产生的活性氧和活性羟基的气氛中。 氧化步骤中的处理容器内的温度设定为900℃以下。因此，沟槽（槽）的肩部的角部以及沟槽的底部的角部不仅可以是 圆形以具有曲面以便防止产生小面。

公开(公告)号：US20050272269A1

公开(公告)日：2005-12-08

申请号：US11086671

申请日：2005-03-23

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

IPC分类号： H01L21/31 ,  C23C8/12 ,  C23C8/16 ,  C23C16/00 ,  H01L21/316 ,  H01L21/469

CPC分类号： C23C8/12 ,  C23C8/16 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.

摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。

公开(公告)号：US06972235B2

公开(公告)日：2005-12-06

申请号：US10494530

申请日：2003-09-16

申请人： Tsukasa Yonekawa ,  Keisuke Suzuki

发明人： Tsukasa Yonekawa ,  Keisuke Suzuki

IPC分类号： H01L21/76 ,  H01L21/00 ,  H01L21/762 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L21/67109 ,  H01L21/3247 ,  H01L21/76232

摘要： A method of processing a semiconductor substrate includes a step of forming a trench (16) in a surface of the substrate, by etching the substrate (W), and a step of rounding a corner (10) of the substrate formed at a mouth of the trench (16), by heat-processing the substrate (W). The step of rounding the corner (10) includes a first heat process performed in a hydrogen gas atmosphere with a process temperature T set to be 850° C.

摘要翻译： 一种处理半导体衬底的方法包括通过蚀刻衬底（W）在衬底的表面中形成沟槽（16）的步骤，以及将形成在基底（W）的基底的角部（10）四舍五入的步骤 沟槽（16），通过热处理衬底（W）。 对角部（10）进行四舍五入的步骤包括在氢气气氛中进行的第一热处理，处理温度T设定为850℃。

公开(公告)号：US20050026978A1

公开(公告)日：2005-02-03

申请号：US10932856

申请日：2004-09-02

申请人： Keisuke Suzuki ,  Jeffrey Bode

发明人： Keisuke Suzuki ,  Jeffrey Bode

IPC分类号： C07D261/20 ,  A61K31/42

CPC分类号： C07D261/20

摘要： The present invention provides isoxazole derivatives represented by the following formula (I): (wherein R1 represents a hydrogen atom, C1-C20 hydrocarbon group or —C(═O)OR1a (wherein R1a represents a C1-C10 alkyl group, etc.); R2 and R3 represent a hydrogen atom, halogen atom, hydroxy group, C1-C20 alkyl group or C6-C20 aryl group, etc.; R4 represents a hydrogen atom, halogen atom, hydroxy group, cyano group, nitro group, amino group, C1-C20 hydrocarbon group, C1-C10 alkoxy group, C1-C10 acyl group, 5- to 7-membered heterocyclic group, etc.; R5 represents a hydrogen atom, halogen atom, hydroxy group, optionally substituted C1-C20 hydrocarbon group, C1-C20 alkoxy group, 5- to 7-membered heterocyclic group, etc.; and, n represents 0, 1, 2, 3 or 4), and a process of producing the same. The compounds are useful as intermediates for synthesis of pharmaceutical compounds, agricultural chemicals, dye compounds, etc. having the isoxazole skeleton.

摘要翻译： 本发明提供由下式（I）表示的异恶唑衍生物：其中R 1表示氢原子，C 1 -C 20烃基或-C（= O）OR 1a（其中R 1a表示 C1-C10烷基等）; R 2和R 3表示氢原子，卤素原子，羟基，C 1 -C 20烷基或C 6 -C 20芳基等; R 4表示 氢原子，卤素原子，羟基，氰基，硝基，氨基，C1-C20烃基，C1-C10烷氧基，C1-C10酰基，5-至7-元杂环基等; R 代表氢原子，卤素原子，羟基，任选取代的C 1 -C 20烃基，C 1 -C 20烷氧基，5-至7-元杂环基等;且n表示0,1,2， 3或4）及其制备方法。 该化合物可用作合成具有异恶唑骨架的药物化合物，农药，染料化合物等的中间体。