公开(公告)号：US06800570B2

公开(公告)日：2004-10-05

申请号：US10131473

申请日：2002-04-25

申请人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

发明人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

IPC分类号： H01L2131

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604

摘要： A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.