公开(公告)号：US06710509B1

公开(公告)日：2004-03-23

申请号：US09038717

申请日：1998-01-28

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H01L4108

CPC分类号： H03H9/02574 ,  H03H9/02551 ,  H03H9/25

摘要： A surface acoustic wave device includes a quartz substrate, a piezoelectric thin film disposed on the quartz substrate and an interdigital electrode in contact with the piezoelectric thin film. The quartz substrate has an angle &phgr; at the Euler angle (0, &phgr;, &thgr;) which is selected such that the quartz substrate has a negative temperature coefficient of delay at a predetermined propagation direction &thgr;. The piezoelectric thin film has a positive temperature coefficient of delay, a thickness which is selected such that a fundamental mode of a leaky surface acoustic wave is excited on the quartz substrate, and the surface acoustic wave device operates using the fundamental mode of the leaky surface acoustic wave. It is preferable that the surface acoustic wave device has a quartz substrate with a Euler angle (0, 119°-138°, 85°-95°) and the normalized thickness of the piezoelectric thin film within the range of about 0.01 to about 0.15.

摘要翻译： 表面声波装置包括石英基板，设置在石英基板上的压电薄膜和与压电薄膜接触的叉指电极。 石英衬底在欧拉角（0，phi，θ）处具有角度phi，其被选择为使得石英衬底在预定传播方向θ具有负温度系数延迟。 压电薄膜具有正温度系数延迟，其厚度被选择为使得在石英衬底上激发泄漏表面声波的基本模式，并且声表面波器件使用漏表面的基本模式进行操作 声波。 优选的是，表面声波装置具有欧拉角（0,119°-138°，85°-95°）的石英基板，压电薄膜的归一化厚度在约0.01至约0.15的范围内 。

公开(公告)号：US06437363B1

公开(公告)日：2002-08-20

申请号：US09390558

申请日：1999-09-03

申请人： Michio Kadota ,  Takashi Fujii

发明人： Michio Kadota ,  Takashi Fujii

IPC分类号： H01L2912

CPC分类号： H01L33/16 ,  H01L33/007 ,  H01L33/0075

摘要： A semiconductor photonic device includes a substrate having a cleavage plane perpendicular to a principal plane thereof; a ZnO film on the substrate; and a compound semiconductor layer expressed by InxGayAlzN (x+y+z=1, 0≦x≦1, 0≦y ≦1, 0≦z≦1).

摘要翻译： 半导体光子器件包括具有垂直于其主平面的解理面的衬底; 衬底上的ZnO膜; 和由InxGayAlzN（x + y + z =1,0,0≤x≤1,0<= y <= 1,0

公开(公告)号：US06377139B1

公开(公告)日：2002-04-23

申请号：US09521829

申请日：2000-03-09

申请人： Hideya Horiuchi ,  Michio Kadota ,  Junya Ago ,  Takao Mukai

发明人： Hideya Horiuchi ,  Michio Kadota ,  Junya Ago ,  Takao Mukai

IPC分类号： H03H925

CPC分类号： H03H9/6436 ,  H03H9/02669 ,  H03H9/02677 ,  H03H9/6433 ,  H03H9/6463

摘要： An edge reflection type surface acoustic wave device utilizes a Shear Horizontal type surface acoustic wave and includes a surface acoustic wave substrate, and at least two interdigital transducers provided on one main surface of the surface acoustic wave substrate. First and second grooves are formed on the opposite ends in the surface acoustic wave propagation direction of the area where the interdigital transducer is provided. The first and second grooves extend from the one main surface of the surface acoustic wave substrate toward the other main surface thereof without reaching the other main surface. The grooves extend substantially perpendicularly to the surface acoustic wave propagation direction so as to define first and second edges for reflecting the surface acoustic wave. The first and second edges are defined by the inner sideively. walls of the first and second grooves, respectively.

摘要翻译： 边缘反射型声表面波装置利用剪切水平型弹性表面波，并且包括表面声波基板和设置在弹性表面波基板的一个主表面上的至少两个叉指式换能器。 第一和第二槽形成在设置叉指换能器的区域的表面声波传播方向的相对端。 第一和第二槽从声表面波衬底的一个主表面向另一个主表面延伸而不到达另一个主表面。 凹槽基本上垂直于声表面波传播方向延伸，以便限定用于反射表面声波的第一和第二边缘。 第一和第二边缘由内侧确定。 第一和第二槽的壁分别。

公开(公告)号：US06356167B1

公开(公告)日：2002-03-12

申请号：US09374088

申请日：1999-08-12

申请人： Michio Kadota ,  Jun Nakanishi ,  Makoto Kumatoriya

发明人： Michio Kadota ,  Jun Nakanishi ,  Makoto Kumatoriya

IPC分类号： H03H925

CPC分类号： H03H9/25 ,  H03H9/0259

摘要： A surface acoustic wave resonator includes a piezoelectric substrate made of a langasite single crystal and an interdigital transducer made of Al provided on the surface of the piezoelectric substrate. A Euler angle (&phgr;, &thgr;, &phgr;) of the piezoelectric substrate is approximately (0°, 140° to 150°, 24° ±1°), and the film thickness H of the interdigital transducer is within the range of about 0.005 to 0.15 with respect to the wavelength &lgr; of a surface acoustic wave generated on the piezoelectric substrate.

摘要翻译： 表面声波谐振器包括由AlGaAs单晶构成的压电基板和由Al构成的交叉指型换能器，其设置在压电基板的表面上。 压电基片的欧拉角（phi，θ，phi）约为（0°，140°至150°，24°±1°），叉指式换能器的膜厚H在约0.005至 0.15相对于在压电基板上产生的表面声波的波长λ。

公开(公告)号：US06297712B1

公开(公告)日：2001-10-02

申请号：US09317071

申请日：1999-05-14

申请人： Michio Kadota ,  Haruo Morii ,  Kazuhiko Morozumi ,  Junya Ago ,  Hideya Horiuchi

发明人： Michio Kadota ,  Haruo Morii ,  Kazuhiko Morozumi ,  Junya Ago ,  Hideya Horiuchi

IPC分类号： H03H972

CPC分类号： H03H9/6433 ,  H03H9/02669 ,  H03H9/02779 ,  H03H9/02992 ,  H03H9/14538 ,  H03H9/6459 ,  H03H9/6469

摘要： A surface acoustic wave filter apparatus includes a plurality of stages of multi-mode filters defined by edge-reflection type surface acoustic wave devices and electrically connected in series with each other. The plurality of stages of multi-mode filters are provided on a common piezoelectric substrate and arranged in a direction which is substantially perpendicular to the propagation direction of surface acoustic waves. Ground electrodes are located between the stages of the plurality of stages of multi-mode filters.

摘要翻译： 表面声波滤波器装置包括由边缘反射型弹性表面波器件限定并且彼此串联电连接的多级多模式滤波器级。 多级滤波器的多级设置在公共压电基片上并且布置在基本上垂直于表面声波的传播方向的方向上。 接地电极位于多级过滤器的多级阶段之间。

公开(公告)号：US06291257B1

公开(公告)日：2001-09-18

申请号：US09342607

申请日：1999-06-29

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  H01S5/021 ,  H01S5/32341

摘要： A semiconductor photonic device contains a substrate: a ZnO buffer layer; and a compound semiconductor layer represented by InxGayAlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1), wherein the ZnO buffer has a thickness of about 3,500 Å or more and is aligned in a c-axis direction.

摘要翻译： 半导体光子器件包含衬底：ZnO缓冲层; 和由InxGayAlzN（其中x + y + z = 1,0 <= x <= 1,0 <= y <= 1和0 <= z <= 1）表示的化合物半导体层，其中ZnO缓冲液具有 约3,500或更大的厚度并且在c轴方向上对准。

公开(公告)号：US06282357B1

公开(公告)日：2001-08-28

申请号：US09386853

申请日：1999-08-31

申请人： Michio Kadota ,  Tsuyoshi Iwamoto

发明人： Michio Kadota ,  Tsuyoshi Iwamoto

IPC分类号： G02B610

CPC分类号： G02F1/335

摘要： An acousto-optic deflector which has a thin film waveguide layer on a buffer layer formed on a substrate and an IDT and light incidence/emergence means on the thin film waveguide layer. As the thin film waveguide layer, a piezoelectric material such as a ZnO film is used. As the substrate, a material with a resistivity of not more than 20 &OHgr;cm is used. Sezawa waves are excited on the thin film waveguide layer by the IDT, and a laser beam traveling in the thin film waveguide layer is deflected by the Sezawa waves. If the ZnO thin film waveguide layer has a thickness of h and if the excited Sezawa waves have a wavelength of &lgr;, 0.2

摘要翻译： 声光偏转器，其在衬底上形成缓冲层上的薄膜波导层，在薄膜波导层上具有IDT和光入射/出射装置。 作为薄膜波导层，使用ZnO膜等压电材料。 作为基板，使用电阻率不超过20欧姆·厘米的材料。 Sezawa波被IDT在薄膜波导层上激发，并且在薄膜波导层中行进的激光束被Sezawa波偏转。 如果ZnO薄膜波导层具有h的厚度，并且如果激发的Sezawa波具有lamb的波长，则满足0.2

公开(公告)号：US6163099A

公开(公告)日：2000-12-19

申请号：US130926

申请日：1998-08-06

申请人： Michio Kadota ,  Makoto Kumatoriya

发明人： Michio Kadota ,  Makoto Kumatoriya

IPC分类号： H03H9/25 ,  H03H9/02 ,  H03H9/15

CPC分类号： H03H9/02574 ,  H03H9/0259

摘要： A surface acoustic wave device includes a piezoelectric substrate made of a Langasite single crystal and at least one interdigital transducer including a pair of comb-shaped electrodes which are interdigitated with each other and are in contact with the piezoelectric substrate. The piezoelectric substrate has a Euler angle of approximately (0.degree., 130.degree. to 170.degree., 23.degree. to 30.degree.), whereby the surface acoustic wave device has an excellent TCD and also has a large K.sup.2 value.

摘要翻译： 表面声波装置包括由朗氏硅单晶制成的压电基片和至少一个叉指式换能器，其包括彼此交叉指向并与压电基片接触的一对梳状电极。 压电基板具有大约（0°，130°至170°，23°至30°）的欧拉角，由此表面声波装置具有优异的TCD并且还具有大的K2值。

公开(公告)号：US5965969A

公开(公告)日：1999-10-12

申请号：US755094

申请日：1996-11-22

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H03H9/145 ,  H03H9/02 ,  H03H9/25 ,  H03H9/15

CPC分类号： H03H9/02574 ,  H03H9/25

摘要： A surface acoustic wave device includes a quartz substrate and generates surface acoustic waves having a high sonic speed. A surface acoustic wave device includes a surface wave substrate comprising a quartz substrate on which an ZnO thin film functioning as a piezoelectric thin film is disposed. IDTs comprising respective pairs of comb electrodes are disposed in contact with the ZnO thin film. A thickness and arrangement of the piezoelectric thin film relative to the quartz substrate and comb electrodes is such that a novel higher order mode of leakage elastic surface acoustic waves are generated and effectively used enable operation at higher sonic velocity and higher frequency.

摘要翻译： 表面声波装置包括石英基板并产生具有高声速的表面声波。 表面声波装置包括表面波基板，其包括石英基板，在该石英基板上设置有用作压电薄膜的ZnO薄膜。 包括各对梳状电极的IDT与ZnO薄膜接触地设置。 压电薄膜相对于石英基板和梳电极的厚度和布置使得产生新的高阶模态的弹性弹性表面声波，并且有效地使用能够在更高的声速和更高的频率下进行操作。

公开(公告)号：US5894185A

公开(公告)日：1999-04-13

申请号：US714822

申请日：1996-09-17

申请人： Takaaki Asada ,  Hideya Horiuchi ,  Akiteru Takatsuka ,  Michio Kadota

发明人： Takaaki Asada ,  Hideya Horiuchi ,  Akiteru Takatsuka ,  Michio Kadota

IPC分类号： H01L41/107 ,  H01L41/04

CPC分类号： H01L41/107

摘要： A piezoelectric transformer includes a piezoelectric plate in which a pair of cuts are formed in the piezoelectric plate at a position corresponding to a nodal point of the piezoelectric plate. The pair of cuts form a cut-out projection. Connection electrodes electrically connected to input electrodes are respectively formed on input-side cut-out projections. In this piezoelectric transformer, the desired support and electrical connection are made through the cut-out projections.

摘要翻译： 一种压电变压器包括压电板，其中在与压电板的节点对应的位置处在压电板中形成一对切口。 一对切口形成一个切口投影。 电连接到输入电极的连接电极分别形成在输入侧切口突起上。 在这种压电变压器中，通过切口突起形成所需的支撑和电连接。