公开(公告)号：US06334896B1

公开(公告)日：2002-01-01

申请号：US09600033

申请日：2000-07-11

申请人： Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1504

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206

摘要： A method for producing a silicon single crystal, wherein, when a silicon single crystal is grown by the Czochralski method, the crystal is pulled with such conditions as present in a region defined by a boundary between a V-rich region and an N-region and a boundary between an N-region and an I-rich region in a defect distribution chart showing defect distribution which is plotted with D [mm] as abscissa and F/G [mm2/° C.·min] as ordinate, wherein D represents a distance between center of the crystal and periphery of the crystal, F/G [mm/min] represents a pulling rate and G [° C./mm] represents an average temperature gradient along the crystal pulling axis direction in the temperature range of from the melting point of silicon to 1400° C., and time required for crystal temperature to pass through the temperature region of from 900° C. to 600° C. is controlled to be 700 minutes or shorter, and a silicon single crystal wafer grown by the Czochralski method, which is a silicon single crystal wafer having N-region for its entire plane, and does not generate OSFs by a single-step thermal oxidation treatment, but generates OSFs by a two-step thermal oxidation treatment. According to the method, a silicon single crystal wafer of an extremely low defect density, which has the N-region for the entire plane of the crystal, is obtained by the CZ, while maintaining high productivity.

摘要翻译： 一种硅单晶的制造方法，其中，当通过切克劳斯斯克方法生长硅单晶时，以存在于富V区和N区之间的边界的区域中的条件拉伸晶体 和缺陷分布图中的N区域和富I区域之间的边界，示出了以D [mm]为横坐标绘制的缺陷分布，F / G [mm2 /℃·min]为纵坐标，其中D 表示晶体的中心和晶体的周边之间的距离，F / G [mm / min]表示拉伸速度，G [℃/ mm]表示在温度范围内沿着拉晶轴方向的平均温度梯度 从硅的熔点到1400℃，晶体温度通过900℃至600℃的温度所需的时间被控制为700分钟或更短，并且硅单晶 通过Czochralski方法生长的晶片，其是硅单体 晶片在其整个平面上具有N区，并且不通过单步热氧化处理产生OSF，而是通过两步热氧化处理产生OSF。 根据该方法，通过CZ获得具有用于整个晶体平面的N区域的具有极低缺陷密度的硅单晶晶片，同时保持高生产率。

公开(公告)号：US6120599A

公开(公告)日：2000-09-19

申请号：US454841

申请日：1999-12-06

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

摘要： In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm.sup.2 /.degree. C..multidot.min at the center of the crystal, where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. Additionally, the single crystal is pulled such that the interstitial oxygen concentration becomes less than 24 ppma, or the time required to pass through a temperature zone of 1050-850.degree. C. within the crystal is controlled to become 140 minutes or less. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, which therefore has an extremely low defect density, and whose entire surface is usable.

摘要翻译： 在制造硅单晶晶片的方法中，根据Czochralski法生长硅单晶，使得F / G值在晶体中心处为0.112-0.142mm 2 /℃×min，其中F为 单晶的拉伸速度（mm / min），G是在硅熔点至1400℃的温度范围内沿着牵引方向的平均晶体内温度梯度（DEG C./mm）。另外 拉伸单晶，使得间隙氧浓度变得小于24ppma，或者通过晶体内的1050-850℃的温度区所需的时间被控制为140分钟以下。 该方法允许生产其中晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，因此具有极低的缺陷密度，并且其整个表面可用。

公开(公告)号：US5980630A

公开(公告)日：1999-11-09

申请号：US81665

申请日：1998-05-20

申请人： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Hirotoshi Yamagishi

发明人： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Hirotoshi Yamagishi

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00

CPC分类号： C30B15/305 ,  Y10S117/917 ,  Y10T117/1068

摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.

摘要翻译： 在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出 熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。 通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是 通过中心部分Cm或者低于该部分。 与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。

公开(公告)号：US5938842A

公开(公告)日：1999-08-17

申请号：US90400

申请日：1998-06-04

申请人： Masahiro Sakurada ,  Tomohiko Oota ,  Kiyotaka Takano ,  Masanori Kimura

发明人： Masahiro Sakurada ,  Tomohiko Oota ,  Kiyotaka Takano ,  Masanori Kimura

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B33/02 ,  C30B35/00

CPC分类号： C30B15/14 ,  Y10T117/10 ,  Y10T117/1068 ,  Y10T117/1088

摘要： A puller and method for crystal growth using the Czochralski technique in which a temperature profile and a history of thermal conditions of a growing crystal is controllable with ease and a good accuracy, which puller comprises a crucible containing raw material, heater for melting by heating the raw material and a heat insulating cylinder surrounding them, the heat insulating cylinder being cross-sectionally divided by an annular separation gap or gaps into parts and which method is applicable to growth of such a single crystal as of silicon, germanium, GaP, GaAs or InP in the puller. Methods for controlling a temperature profile and a history of thermal conditions of a growing crystal using the czochralski technique in the puller.

摘要翻译： 使用Czochralski技术的拉伸器和晶体生长方法，其中温度分布和生长晶体的热条件的历史可以容易地和准确地控制，该拉拔器包括含有原料的坩埚，通过加热熔化的加热器 原材料和围绕它们的隔热圆筒，隔热圆柱体被环形分隔间隙或间隙横截面分割成多个部分，并且该方法适用于诸如硅，锗，GaP，GaAs或单晶的生长 InP在拉拔器。 使用切割器中的切克萨斯技术控制生长晶体的温度分布和热条件的历史的方法。

公开(公告)号：US5905844A

公开(公告)日：1999-05-18

申请号：US846527

申请日：1997-04-29

申请人： Masanori Kimura ,  Masaki Oguro

发明人： Masanori Kimura ,  Masaki Oguro

IPC分类号： G11B27/11 ,  G11B27/32 ,  H04N5/92 ,  H04N7/088 ,  H04N9/804 ,  H04N9/806 ,  H04N9/82 ,  H04N5/91

CPC分类号： H04N9/804 ,  G11B27/11 ,  G11B27/328 ,  H04N5/9207 ,  H04N5/9208 ,  H04N7/0882 ,  H04N7/0884 ,  H04N7/0887 ,  H04N9/8066 ,  H04N9/8244 ,  G11B2220/655 ,  H04N9/8047 ,  H04N9/8063 ,  H04N9/8238

摘要： A recording and reproducing apparatus which receives character broadcasting information transmitted via a vertical blanking period of audio/video signals. The apparatus detects certain information from the received data, including a prefix portion and character information. The character information is screened for desired information which is then separated from the remaining broadcasting information based on the detected information, such as the prefix portion. The separated data is then recorded in a separate area on the recording track. Video data is recorded in a first area and audio data is recorded in a second area on the recording track. The character broadcasting information is reproduced by inserting the reproduced desired character information into the vertical blanking period of reproduced video data.

摘要翻译： 一种记录和再现装置，其接收通过音频/视频信号的垂直消隐期发送的字符广播信息。 该装置从接收到的数据检测某些信息，包括前缀部分和字符信息。 根据检测到的信息（例如前缀部分），对所需信息进行屏蔽，然后将其与剩余的广播信息分开。 然后将分离的数据记录在记录轨道上的单独区域中。 视频数据被记录在第一区域中，并且音频数据被记录在记录轨道上的第二区域中。 通过将再现的期望字符信息插入再现的视频数据的垂直消隐期来再现字符广播信息。

公开(公告)号：US5785758A

公开(公告)日：1998-07-28

申请号：US777670

申请日：1996-12-20

申请人： Hirotoshi Yamagishi ,  Kiyotaka Takano ,  Masanori Kimura

发明人： Hirotoshi Yamagishi ,  Kiyotaka Takano ,  Masanori Kimura

IPC分类号： C30B15/14 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1072

摘要： In a single crystal growing apparatus which pulls a semiconductor single crystal rod 14 from a semiconductor melt 13 contained in a quartz crucible 5 to grow the semiconductor single crystal, quartz crucible 5 is designed such that it can move up and down so as to maintain the level of semiconductor melt 13 constant and a main heater 7 which can move up and down and a subheater 10 which can move up and down are provided to heat semiconductor melt 13 so that the thermal environment of semiconductor melt 13 is maintained substantially constant.

摘要翻译： 在从包含在石英坩埚5中的半导体熔融物13拉出半导体单晶棒14以生长半导体单晶的单晶生长装置中，石英坩埚5被设计成能够上下移动，以保持 提供半导体熔体13的恒定水平和可上下移动的主加热器7以及可上下移动的副加热器10以加热半导体熔体13，使得半导体熔体13的热环境保持基本恒定。

公开(公告)号：US4955788A

公开(公告)日：1990-09-11

申请号：US194284

申请日：1988-05-16

申请人： Masanori Kimura ,  Shigetoshi Narisue ,  Hiroshi Nakatomi ,  Eito Matsuo

发明人： Masanori Kimura ,  Shigetoshi Narisue ,  Hiroshi Nakatomi ,  Eito Matsuo

IPC分类号： F01D17/16

CPC分类号： F01D17/165 ,  Y10T74/18944

摘要： An improved driving linkage device for adjusting a variable nozzle mechanism in a supercharger turbine or a variable diffuser mechanism in a compressor. The driving linkage device is provided with a driving ring for driving a variable nozzle mechanism in a supercharger turbine or a variable diffuser mechanism in a compressor, one or more sets of adjusting links, each set consisting of three levers connected in a U-shape and having two opposed ones coupled to the driving ring and a fulcrum for supporting the lever not coupled to the driving ring. One end of one adjusting link is coupled to an actuator to achieve the adjustment of a variable nozzle mechanism in a supercharger or of a variable diffuser mechanism in a compressor.

摘要翻译： 一种改进的驱动联动装置，用于调节压缩机中的增压器涡轮或可变扩散器机构中的可变喷嘴机构。 驱动联动装置设置有用于驱动增压器涡轮机中的可变喷嘴机构的驱动环或压缩机中的可变扩散机构，一组或多组调节连杆，每组由U形连接的三个杠杆和 具有联接到驱动环的两个相对的支撑件和用于支撑未联接到驱动环的杠杆的支点。 一个调节连杆的一端连接到致动器，以实现压缩机中的增压器或可变扩散器机构中的可变喷嘴机构的调节。

公开(公告)号：US20090174828A1

公开(公告)日：2009-07-09

申请号：US12363986

申请日：2009-02-02

申请人： Katsuhiko KUMAGAWA ,  Hiroyuki Yamakita ,  Masanori Kimura ,  Akio Takimoto

发明人： Katsuhiko KUMAGAWA ,  Hiroyuki Yamakita ,  Masanori Kimura ,  Akio Takimoto

IPC分类号： G09G3/36 ,  G02F1/1343

CPC分类号： G02F1/134363 ,  G02F2001/134345 ,  G09G3/3614 ,  G09G2300/0434 ,  G09G2320/0247

摘要： An array substrate (10) is provided with a pixel electrode (3) disposed in a region defined by two adjacent gate wirings (1) and two adjacent source wirings (2), a switching element (5) for switching a voltage applied to the pixel electrode (3) from the source wiring (2) based on a signal voltage supplied from the gate wiring (1), a common wiring (8) arranged between the two adjacent gate wirings (1) and a common electrode (4) being electrically connected to the common wiring (8) and generating an electric field between the pixel electrode (3) whereto a voltage is applied, wherein the pixel electrode (1) comprises a first pixel electrode (1a) and a second pixel electrode (2a), and the opposing electrode (2) comprises a first opposing electrode (1b) and a second opposing electrode (2b), wherein a first region generates an electric field between the first pixel electrode (1a) and the first opposing electrode (2a) whose light transmittance is lower than that of the first pixel electrode (1a) and a second region generates an electric field between the second pixel electrode (1b) and the second opposing electrode (2b) whose light transmittance is higher than that of the second pixel electrode (1b) are formed.

摘要翻译： 阵列基板（10）设置有设置在由两个相邻的栅极布线（1）和两个相邻的源极布线（2）限定的区域中的像素电极（3），用于切换施加到 基于从栅极布线（1）提供的信号电压，源极布线（2）的像素电极（3），布置在两个相邻的栅极布线（1）和公共电极（4）之间的公共布线（8） 电连接到公共布线（8）并在施加电压的像素电极（3）之间产生电场，其中像素电极（1）包括第一像素电极（1a）和第二像素电极（2a） ，相对电极（2）包括第一相对电极（1b）和第二相对电极（2b），其中第一区域在第一像素电极（1a）和第一相对电极（2a）之间产生电场， 透光率比第一像素电极的透光率低 1a）和第二区域在第二像素电极（1b）和第二相对电极（2b）之间产生其透光率高于第二像素电极（1b）的电场。

公开(公告)号：US06850303B2

公开(公告)日：2005-02-01

申请号：US10148131

申请日：2001-09-27

申请人： Masanori Kimura ,  Katsuhiko Kumagawa ,  Tetsuo Fukami ,  Hiroyuki Yamakita ,  Satoshi Asada

发明人： Masanori Kimura ,  Katsuhiko Kumagawa ,  Tetsuo Fukami ,  Hiroyuki Yamakita ,  Satoshi Asada

IPC分类号： G02F1/1343 ,  G02F1/1362

CPC分类号： G02F1/134363 ,  G02F1/136213

摘要： The liquid crystal display device having an array substrate (10) provided with a pixel electrode (3) disposed in a region defined by two adjacent gate wirings (1) and two adjacent source wirings (2), a switching element (5) for switching a voltage applied to the pixel electrode (3) from the source wiring (2) based on a signal volume fed from the gate wiring (1), a common wiring (8) formed between the two adjacent gate wirings (1), a common electrode (4) being electrically connected to the common wiring (8) and generating an electric field between the common electrode (4) and the pixel electrode (3) for driving the liquid crystal, and a storage capacity electrode (20a) electrically connected to the common wiring (8), wherein the common wiring (8) and the storage capacity electrode (20a) are layered so as to hold at least some part of the pixel electrode (3) in between through insulating layers (6a, 6b).

摘要翻译： 具有设置有由两个相邻的栅极布线（1）和两个相邻的源极布线（2）限定的区域中的像素电极（3）的阵列基板（10）的液晶显示装置，用于切换的开关元件 基于从栅极布线（1）馈送的信号量，从源极布线（2）施加到像素电极（3）的电压，形成在两个相邻栅极布线（1）之间的公共布线（8） 电极（4）电连接到公共布线（8），并在公共电极（4）和用于驱动液晶的像素电极（3）之间产生电场，以及存储电容电极（20a），电连接到 公共布线（8），其中公共布线（8）和存储电容电极（20a）被层叠以便将至少一部分像素电极（3）保持在绝缘层（6a，6b）之间。

公开(公告)号：US06843847B1

公开(公告)日：2005-01-18

申请号：US09869912

申请日：2000-11-07

申请人： Makoto Iida ,  Masanori Kimura

发明人： Makoto Iida ,  Masanori Kimura

IPC分类号： C30B15/00 ,  C30B29/06 ,  H01L21/02 ,  H01L21/322 ,  H01L27/12 ,  C30B15/20

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/203 ,  H01L21/3225

摘要： A silicon single crystal wafer grown by the CZ method, which is doped with nitrogen and has an N-region for the entire plane and an interstitial oxygen concentration of 8 ppma or less, or which is doped with nitrogen and has an interstitial oxygen concentration of 8 ppma or less, and in which at least void type defects and dislocation clusters are eliminated from the entire plane, and a method for producing the same. Thus, there are provided a defect-free silicon single crystal wafer having an N-region for the entire plane, in which void type defects and dislocation clusters are eliminated, produced by the CZ method under readily controllable stable production conditions with a wide controllable range, and a method producing the same.

摘要翻译： 通过CZ方法生长的硅单晶晶片，其掺杂有氮并具有用于整个平面的N区和8ppma或更小的间隙氧浓度，或者掺杂有氮并且具有间隙氧浓度 8ppma以下，并且其中至少从整个平面除去空隙型缺陷和位错簇及其制造方法。 因此，提供了一种无缺陷的硅单晶晶片，其在具有宽的可控范围的容易控制的稳定生产条件下，通过CZ方法在整个平面上具有N区域，其中消除空隙型缺陷和位错簇 ，及其制造方法。