公开(公告)号：US20080118757A1

公开(公告)日：2008-05-22

申请号：US11979447

申请日：2007-11-02

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： B32B9/00 ,  B29C65/00

CPC分类号： H01L21/76254 ,  C30B29/06 ,  C30B33/00 ,  H01L21/2007 ,  H01L29/78603 ,  Y10S438/967 ,  Y10T428/31612

摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 is bonded to the quartz substrate 20 having a carbon concentration of 100 ppm or higher, and an external shock is applied near the ion-implanted damage layer 11 to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that an SOQ substrate can be fabricated. There can be provided an SOQ substrate highly adaptable to a semiconductor device manufacturing process.

摘要翻译： 将氢离子注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。 作为氢离子注入的结果，形成氢离子注入边界12。 将单晶Si衬底10接合到碳浓度为100ppm以上的石英衬底20上，并且在离子注入损伤层11附近施加外部冲击，以沿着氢离子注入边界12剥离Si晶体膜 的单晶Si衬底10。 然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造出SOQ基板。 可以提供高度适应于半导体器件制造工艺的SOQ衬底。

公开(公告)号：US20080099067A1

公开(公告)日：2008-05-01

申请号：US11976026

申请日：2007-10-19

申请人： Atsuo Ito ,  Shoji Akiyama ,  Masahiro Furuya ,  Makoto Kawai ,  Koichi Tanaka ,  Yoshihiro Kubota ,  Yuuji Tobisaka

发明人： Atsuo Ito ,  Shoji Akiyama ,  Masahiro Furuya ,  Makoto Kawai ,  Koichi Tanaka ,  Yoshihiro Kubota ,  Yuuji Tobisaka

IPC分类号： B05D5/12 ,  H01L31/00

CPC分类号： H01L31/1804 ,  H01L31/0682 ,  H01L31/186 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

摘要： There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent adhesive while using the ion implanting surface as a bonding surface; curing the transparent adhesive; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, in a manner that a plurality of first conductivity-type regions and a plurality of second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer; forming pluralities of individual electrodes on the pluralities of first and second conductivity-type regions of the single crystal silicon layer, respectively; and forming collector electrodes for the individual electrodes, respectively. There can be provided a single crystal silicon solar cell as a see-through type solar cell, including a thin-film light conversion layer made of single crystal silicon having a higher crystallinity.

摘要翻译： 公开了一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将氢离子或稀有气体离子注入到单晶硅衬底中，以在单晶硅衬底中形成离子注入层; 通过透明粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 固化透明胶; 对离子注入层施加冲击以在其上机械分层单晶硅衬底以留下单晶硅层; 在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电类型区域和多个第二导电类型区域存在于分层表面 的单晶硅层; 在单晶硅层的多个第一和第二导电类型区域上分别形成多个独立电极; 并分别形成各个电极的集电极。 可以提供作为透明型太阳能电池的单晶硅太阳能电池，其包括由具有较高结晶度的单晶硅制成的薄膜光转换层。

公开(公告)号：US08263478B2

公开(公告)日：2012-09-11

申请号：US12805582

申请日：2010-08-06

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.

摘要翻译： 将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。 氢离子注入，形成氢离子注入边界12。 单晶Si衬底10和低熔点玻璃衬底20结合在一起。 键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。 此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。 然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。 可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

公开(公告)号：US08227290B2

公开(公告)日：2012-07-24

申请号：US11976026

申请日：2007-10-19

申请人： Atsuo Ito ,  Shoji Akiyama ,  Masahiro Furuya ,  Makoto Kawai ,  Koichi Tanaka ,  Yoshihiro Kubota ,  Yuuji Tobisaka

发明人： Atsuo Ito ,  Shoji Akiyama ,  Masahiro Furuya ,  Makoto Kawai ,  Koichi Tanaka ,  Yoshihiro Kubota ,  Yuuji Tobisaka

IPC分类号： H01L21/00

CPC分类号： H01L31/1804 ,  H01L31/0682 ,  H01L31/186 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent adhesive while using the ion implanting surface as a bonding surface; curing the transparent adhesive; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate; forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer; forming pluralities of individual electrodes on the pluralities of first and second conductivity-type regions, respectively; and forming collector electrodes for the individual electrodes, respectively.

摘要翻译： 一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将离子注入单晶硅衬底; 通过透明粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 固化透明胶; 对离子注入层施加冲击以使单晶硅衬底机械分层; 在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶硅的分层表面 层; 在多个第一和第二导电类型区域上分别形成多个单独的电极; 并分别形成各个电极的集电极。

公开(公告)号：US08227289B2

公开(公告)日：2012-07-24

申请号：US11976020

申请日：2007-10-19

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L21/00

CPC分类号： H01L31/186 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate; conducting a surface activating treatment for at least one of: the ion implanting surface of the single crystal silicon substrate, and a surface of the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the transparent insulator substrate to each other, such that the surface(s) subjected to the surface activating treatment is/are used as a bonding surface(s); applying an impact to the ion implanted layer; and forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer.

摘要翻译： 一种单晶硅太阳能电池的制造方法，包括以下步骤：将离子注入单晶硅衬底; 对所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底的表面中的至少一个进行表面活化处理; 将单晶硅衬底和透明绝缘体衬底的离子注入表面彼此接合，使得经过表面活化处理的表面被用作粘合表面; 对离子注入层施加冲击; 并且在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶层的分层表面 硅层。

公开(公告)号：US08119903B2

公开(公告)日：2012-02-21

申请号：US11984182

申请日：2007-11-14

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L31/04 ,  H01L31/0216 ,  B05D5/12

CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： There is disclosed a single crystal silicon solar cell includes the steps of: implanting hydrogen ions or rare gas ions to a single crystal silicon substrate; performing surface activation on at least one of an ion-implanted surface of the single crystal silicon substrate and a surface of a transparent insulator substrate; bonding the ion-implanted surface of the single crystal silicon substrate and the transparent insulator substrate with the surface-activated surface being set as a bonding surface; applying an impact onto the ion implanted layer to mechanically delaminate the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion regions having a second conductivity type on the delaminated plane side of the single crystal silicon layer; forming a plurality of first conductivity type regions and a plurality of second conductivity type regions on the delaminated plane of the single crystal silicon layer; and forming a light reflection film that covers the plurality of first conductivity type regions and the plurality of second conductivity type regions. There can be provided an optical confinement type single crystal silicon solar cell where a thin-film light conversion layer is made of high-crystallinity single crystal silicon.

摘要翻译： 公开了一种单晶硅太阳能电池，包括以下步骤：将氢离子或稀有气体离子注入单晶硅衬底; 在单晶硅衬底的离子注入表面和透明绝缘体衬底的表面中的至少一个上进行表面活化; 将所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底接合，所述表面激活表面被设置为接合表面; 对离子注入层施加冲击以机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层平面侧形成具有第二导电类型的多个扩散区; 在单晶硅层的分层面上形成多个第一导电型区域和多个第二导电型区域; 以及形成覆盖所述多个第一导电类型区域和所述多个第二导电类型区域的光反射膜。 可以提供一种光限制型单晶硅太阳能电池，其中薄膜光转换层由高结晶度单晶硅制成。

公开(公告)号：US20110290320A1

公开(公告)日：2011-12-01

申请号：US13137215

申请日：2011-07-28

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L31/0224 ,  H01L31/0256 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.

公开(公告)号：US07935611B2

公开(公告)日：2011-05-03

申请号：US12282176

申请日：2007-03-12

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/46 ,  H01L31/00

CPC分类号： H01L21/76254 ,  H01L31/0687 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： A silicon layer having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate and hydrogen ions are implanted to a predetermined depth into the surface region of the silicon substrate through the silicon layer to form a hydrogen ion-implanted layer. Then, an n-type germanium-based crystal layer whose conductivity type is opposite to that of the silicon layer and a p-type germanium-based crystal layer whose conductivity type is opposite to that of the germanium-based crystal layer are successively vapor-phase grown to provide a germanium-based crystal. The surface of the germanium-based crystal layer and the surface of the supporting substrate are bonded together. In this state, impact is applied externally to separate a silicon crystal from the silicon substrate along the hydrogen ion-implanted layer, thereby transferring a laminated structure composed of the germanium-based crystal and the silicon crystal onto the supporting substrate.

摘要翻译： 在硅衬底的表面上提供具有与体的导电类型相反的导电类型的硅层，并且通过硅层将氢离子注入到硅衬底的表面区域中以预定深度注入到氢离子注入 层。 然后，其导电类型与硅层的导电类型相反的n型锗基晶体层和导电类型与锗基晶体层的导电类型相反的p型锗基晶体层连续蒸发， 相生长以提供锗基晶体。 锗基晶体层的表面和支撑基板的表面接合在一起。 在这种状态下，外部施加冲击以沿着氢离子注入层从硅衬底分离硅晶体，从而将由锗基晶体和硅晶体组成的叠层结构转移到支撑衬底上。

公开(公告)号：US07790571B2

公开(公告)日：2010-09-07

申请号：US11984184

申请日：2007-11-14

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/78

CPC分类号： H01L21/3247 ,  H01L21/76254 ,  H01L29/78603

摘要： A method of manufacturing an SOQ substrate and an SOQ substrate manufactured by the same are disclosed. In the method, hydrogen ions are implanted to a surface of a single crystal Si substrate through an oxide film to uniformly form an ion implanted layer at a predetermined depth from the surface of the single crystal Si substrate, and a bonding surface of the substrate undergoes a plasma treatment or an ozone treatment. An external shock is applied onto the single crystal Si substrate and quartz substrate, which are bonded together, to mechanically delaminate a silicon film from a single crystal silicon bulk. In this way, the SOQ film is formed on the quartz substrate through the oxide film. To further smooth the SOQ film surface, hydrogen heat treatment is performed at a temperature of 1000° C. or less below a quartz glass transition point.

摘要翻译： 公开了一种制造其制造的SOQ基板和SOQ基板的方法。 在该方法中，通过氧化膜将氢离子注入到单晶Si衬底的表面，以在与单晶Si衬底的表面规定深度均匀地形成离子注入层，并且衬底的接合表面经历 等离子体处理或臭氧处理。 外部冲击被施加到结合在一起的单晶Si衬底和石英衬底上，从而将硅膜从单晶硅体块分层。 以这种方式，通过氧化膜在石英衬底上形成SOQ膜。 为了进一步平滑SOQ膜表面，在石英玻璃化转变点以下1000℃以下的温度下进行氢热处理。

公开(公告)号：US20100025804A1

公开(公告)日：2010-02-04

申请号：US12158047

申请日：2006-11-01

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

IPC分类号： H01L21/762 ,  H01L27/12

CPC分类号： H01L21/76254

摘要： On the side of a surface (the bonding surface side) of a single crystal Si substrate, a uniform ion implantation layer is formed at a prescribed depth (L) in the vicinity of the surface. The surface of the single crystal Si substrate and a surface of a transparent insulating substrate as bonding surfaces are brought into close contact with each other, and bonding is performed by heating the substrates in this state at a temperature of 350° C. or below. After this bonding process, an Si—Si bond in the ion implantation layer is broken by applying impact from the outside, and a single crystal silicon thin film is mechanically peeled along a crystal surface at a position equivalent to the prescribed depth (L) in the vicinity of the surface of the single crystal Si substrate.

摘要翻译： 在单晶Si衬底的表面（接合面侧）侧，在表面附近以规定的深度（L）形成均匀的离子注入层。 单晶Si衬底的表面和作为结合面的透明绝缘衬底的表面彼此紧密接触，并且通过在350℃或更低的温度下在该状态下加热衬底来进行接合。 在该接合工艺之后，通过从外部施加冲击来破坏离子注入层中的Si-Si键，并且在等于规定深度（L）的位置上的晶体表面机械剥离单晶硅薄膜 单晶Si衬底表面附近。