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公开(公告)号：US20090033177A1
公开(公告)日：2009-02-05
申请号：US10582229
申请日：2006-03-29
申请人： Kazuhiko Itaya , Ryoichi Ohara , Kenya Sano , Takaaki Yasumoto , Naoko Yanase
发明人： Kazuhiko Itaya , Ryoichi Ohara , Kenya Sano , Takaaki Yasumoto , Naoko Yanase
IPC分类号： H01L41/047 , H01L41/22
摘要： A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.
摘要翻译： 薄膜压电谐振器包括具有空腔的基板; 在空腔上延伸的第一电极; 放置在第一电极上的压电薄膜; 以及放置在所述压电膜上的第二电极，所述第二电极具有在所述空腔上部分重叠的周边，并且具有锥形以具有由其周边的一部分及其底部限定的30度或更小的内角。
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公开(公告)号：US20080238550A1
公开(公告)日：2008-10-02
申请号：US11857737
申请日：2007-09-19
申请人： Tadahiro SASAKI , Kazuhide Abe , Kazuhiko Itaya , Hideyuki Funaki
发明人： Tadahiro SASAKI , Kazuhide Abe , Kazuhiko Itaya , Hideyuki Funaki
CPC分类号： H03F3/604 , H01L21/823425 , H01L27/088 , H03F1/3205 , H03F3/16 , H03F3/607 , H03F3/72 , H03F2200/108 , H03F2200/451 , H03F2200/468 , H03F2200/543 , H03F2200/78 , H03F2203/7236
摘要： A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.
摘要翻译： 功率放大器包括：形成在半导体衬底上的第一多指FET; 形成在半导体衬底上的第二多指FET; 第一温度检测器，其检测第一FET的通道温度; 第二温度检测器，其检测第二FET的通道温度; 第三温度检测器，其检测半导体衬底的温度; 第一检测电路，检测第一温度检测器的输出和第三温度检测器的输出之间的差异，并将差值转换为热电动势; 第二检测电路，检测第二温度检测器的输出与第三温度检测器的输出之间的差异，并将差值转换为热电动势; 以及比较器，将第一和第二检测电路的输出彼此进行比较，以打开第一和第二开关中的一个并且关闭另一个。
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公开(公告)号：US20070281646A1
公开(公告)日：2007-12-06
申请号：US11755107
申请日：2007-05-30
IPC分类号： H04B1/26
CPC分类号： H01G5/18
摘要： A variable capacitance device has a piezoelectric driving part, a movable electrode, a fixed electrode, a dielectric film and a driving control unit. The piezoelectric driving part has a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on an undersurface of the piezoelectric film and electrode slits which separate the upper electrode and the lower electrode into two, respectively. The movable electrode is provided via the electrode slits at one end of the piezoelectric driving part. The fixed electrode is disposed opposite to the movable electrode via a gap. The dielectric film is disposed opposite to the movable electrode via the gap and provided on the fixed electrode. The driving control unit adjusts a distance between the movable electrode and the fixed electrode to reduce a fluctuation of a predetermined capacitance of a variable capacitor formed between the variable electrode and the fixed electrode.
摘要翻译： 可变电容器件具有压电驱动部，可动电极，固定电极，电介质膜和驱动控制部。 压电驱动部分具有压电膜，设置在压电膜的顶表面上的上电极，设置在压电膜的下表面上的下电极以及分别将上电极和下电极分成两部分的电极狭缝。 可动电极通过电极狭缝设置在压电驱动部分的一端。 固定电极通过间隙与可动电极相对设置。 电介质膜经由间隙与可动电极相对设置，设置在固定电极上。 驱动控制单元调整可动电极和固定电极之间的距离，以减小形成在可变电极和固定电极之间的可变电容器的预定电容的波动。
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公开(公告)号：US20070228887A1
公开(公告)日：2007-10-04
申请号：US11683755
申请日：2007-03-08
IPC分类号： H01L41/00
CPC分类号： B81B3/0072 , B81B2201/032 , H01G5/18 , H01H57/00 , H01H2057/006 , H01L41/094
摘要： A MEMS device includes: a first actuator having a first fixed end, including a stacked structure of a first lower electrode, a first piezoelectric film, and a first upper electrode, and being able to be operated by applying voltages to the first lower electrode and the first upper electrode; a second actuator having a second fixed end, being disposed in parallel with the first actuator, including a stacked structure of a second lower electrode, a second piezoelectric film, and a second upper electrode, and being able to be operated by applying voltages to the second lower electrode and the second upper electrode; and an electric circuit element having a first action part connected to the first actuator and a second action part connected to the second actuator.
摘要翻译： MEMS器件包括：第一致动器，具有第一固定端，包括第一下电极，第一压电膜和第一上电极的堆叠结构，并且能够通过向第一下电极施加电压而操作， 第一上电极; 具有第二固定端的第二致动器，与所述第一致动器平行设置，包括第二下电极，第二压电膜和第二上电极的堆叠结构，并且能够通过向所述第二致动器施加电压而被操作 第二下电极和第二上电极; 以及具有连接到第一致动器的第一作用部分和连接到第二致动器的第二作用部分的电路元件。
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公开(公告)号：US07268647B2
公开(公告)日：2007-09-11
申请号：US11626270
申请日：2007-01-23
申请人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
发明人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
摘要： A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.
摘要翻译： 一种薄膜体声波谐振器，具有具有空腔的基板，所述基板由半绝缘材料和高电阻率材料中的一种形成，底部电极部分地固定到所述基板，所述底部电极的一部分机械地悬挂在 空腔，设置在底部电极上的压电层，压电层的形状由轮廓限定，压电层上的顶部电极，埋在基底表面的表面的半导体中间电极位于 压电层的轮廓，半导体区域具有比衬底低的电阻率，中间电极在轮廓内部连接到底部电极，并且连接到从轮廓延伸到半导体中间电极的底部电极配线 在平面视图外的轮廓外。
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公开(公告)号：US20070115078A1
公开(公告)日：2007-05-24
申请号：US11626270
申请日：2007-01-23
申请人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
发明人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
IPC分类号： H03H9/54
摘要： A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.
摘要翻译： 一种薄膜体声波谐振器，具有具有空腔的基板，所述基板由半绝缘材料和高电阻率材料中的一种形成，底部电极部分地固定到所述基板，所述底部电极的一部分机械地悬挂在 空腔，设置在底部电极上的压电层，压电层的形状由轮廓限定，压电层上的顶部电极，埋在基底表面的表面的半导体中间电极位于 压电层的轮廓，半导体区域具有比衬底低的电阻率，中间电极在轮廓内部连接到底部电极，并且连接到从轮廓延伸到半导体中间电极的底部电极配线 在平面视图外的轮廓外。
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公开(公告)号：US20070087434A1
公开(公告)日：2007-04-19
申请号：US11535627
申请日：2006-09-27
申请人： Yujiro Naruse , Kazuhiko Itaya
发明人： Yujiro Naruse , Kazuhiko Itaya
CPC分类号： A61K9/1273 , A01N61/00 , A61K9/51 , A61K41/0019 , A61K47/6901 , B82Y5/00 , A01N25/34
摘要： An antiviral artificial cell includes: an artificial cytoskeleton, an artificial cytomembrane wrapping the artificial cytoskeleton, and a nanoparticle rotatably retained on the artificial cytomembrane and having a surface for capturing a virus.
摘要翻译： 抗病毒人造细胞包括：人造细胞骨架，人造细胞骨架的人造细胞膜和可旋转地保留在人造细胞膜上并具有用于捕获病毒的表面的纳米颗粒。
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公开(公告)号：US07187253B2
公开(公告)日：2007-03-06
申请号：US11108671
申请日：2005-04-19
申请人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
发明人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
摘要： A film bulk acoustic-wave resonator encompasses (a) a substrate having a cavity, (b) a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, (c) a piezoelectric layer disposed on the bottom electrode, a planar shape of the piezoelectric layer is defined by a contour, which covers an entire surface of the bottom electrode in a plan view, (d) a top electrode on the piezoelectric layer, (e) an intermediate electrode located between the substrate and the piezoelectric layer, and at the contour of the piezoelectric layer, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and (f) a bottom electrode wiring connected to the intermediate electrode extending from the contour to an outside of the contour in the plan view, wherein a longitudinal vibration mode along a thickness direction of the piezoelectric layer is utilized.
摘要翻译： 薄膜体声波谐振器包括（a）具有空腔的基板，（b）部分地固定到基板的底部电极，底部电极的一部分机械地悬挂在空腔上方，（c）压电层， 底部电极，压电层的平面形状由在平面图中覆盖底部电极的整个表面的轮廓限定，（d）压电层上的顶部电极，（e）中间电极，位于 衬底和压电层，并且在压电层的轮廓处，中间电极在轮廓的内部连接到底部电极，（f）连接到从轮廓延伸到中间电极的底部电极配线 在平面图的轮廓外侧，利用沿着压电体层的厚度方向的纵向振动模式。
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公开(公告)号：US5740192A
公开(公告)日：1998-04-14
申请号：US767673
申请日：1996-12-17
申请人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
发明人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
CPC分类号： H01S5/32341 , H01S2302/00
摘要： A semiconductor laser exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor laser is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.
摘要翻译： 表现出450nm以下的振荡波长的半导体激光器，其特征在于，具有基板，形成在所述基板上或上方的主要由III-V族化合物半导体构成的下部包层，直接形成在所述下部包层上的有源层和 主要由III-V族化合物半导体构成，上部p型覆盖层直接形成在主要由III-V族化合物半导体构成的有源层上。 该半导体激光器的特征在于，上部p型覆盖层含有Mg，Si和用于补偿残余供体的至少一种杂质。
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公开(公告)号：US09284186B2
公开(公告)日：2016-03-15
申请号：US13625249
申请日：2012-09-24
申请人： Hiroshi Yamada , Hideyuki Funaki , Kazuhiro Suzuki , Kazuhiko Itaya , Armon Mahajerin , Kevin Limkrailassiri , Liwei Lin
发明人： Hiroshi Yamada , Hideyuki Funaki , Kazuhiro Suzuki , Kazuhiko Itaya , Armon Mahajerin , Kevin Limkrailassiri , Liwei Lin
IPC分类号： B81C1/00
CPC分类号： B81C1/00182
摘要： After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.
摘要翻译： 在半导体器件的表面上形成TEOS氧化物膜之后，在TEOS氧化物膜的表面上形成具有透气性的PSG膜和SiN膜。 此后，在其上形成多晶硅膜。 通过通过PSG膜，SiN膜和Poly-Si膜的气态HF除去牺牲层，然后用Poly-Si / SiC膜覆盖最上层。 可以在半导体元件上实现具有薄膜中空密封结构的芯片级封装。
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