-
41.发明授权公开(公告)号：US08273649B2
公开(公告)日：2012-09-25
申请号：US12272129
申请日：2008-11-17
申请人： Joel P. de Souza , Keith E. Fogel , Edward W. Kiewra , Steven J. Koester , Christopher C. Parks , Devendra K. Sadana , Shahab Siddiqui
发明人： Joel P. de Souza , Keith E. Fogel , Edward W. Kiewra , Steven J. Koester , Christopher C. Parks , Devendra K. Sadana , Shahab Siddiqui
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L21/28264 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor.
摘要翻译： 提供了防止III-V族化合物半导体的表面分解的方法。 该方法包括在III-V族化合物半导体的表面上形成厚度为从至400的硅膜。 在III-V族化合物半导体的表面上形成硅膜之后，可以在封盖/钝化的III-V化合物半导体上形成包括例如MOSFET的高性能半导体器件。 在MOSFET制造期间，可以在封盖/钝化的III-V化合物半导体上形成高k电介质，此后可以将激活的源极和漏极区域形成为III-V族化合物半导体。
-
42.发明申请公开(公告)号：US20100123205A1
公开(公告)日：2010-05-20
申请号：US12272129
申请日：2008-11-17
申请人： Joel P. de Souza , Keith E. Fogel , Edward W. Kiewra , Steven J. Koester , Christopher C. Parks , Devendra K. Sadana , Shahab Siddiqui
发明人： Joel P. de Souza , Keith E. Fogel , Edward W. Kiewra , Steven J. Koester , Christopher C. Parks , Devendra K. Sadana , Shahab Siddiqui
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/28264 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor.
摘要翻译： 提供了防止III-V族化合物半导体的表面分解的方法。 该方法包括在III-V族化合物半导体的表面上形成厚度为从至400的硅膜。 在III-V族化合物半导体的表面上形成硅膜之后，可以在封盖/钝化的III-V化合物半导体上形成包括例如MOSFET的高性能半导体器件。 在MOSFET制造期间，可以在封盖/钝化的III-V化合物半导体上形成高k电介质，此后可以将激活的源极和漏极区域形成为III-V族化合物半导体。
-
43.发明申请DEVELOPMENT OR REMOVAL OF BLOCK COPOLYMER OR PMMA-b-S-BASED RESIST USING POLAR SUPERCRITICAL SOLVENT 有权使用极性超临界溶剂开发或去除嵌段共聚物或PMMA-b-S基电阻公开(公告)号：US20080248655A1
公开(公告)日：2008-10-09
申请号：US12143445
申请日：2008-06-20
CPC分类号： G03F7/168 , G03F7/325 , Y10S438/922 , Y10S977/733 , Y10S977/734
摘要： Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO2) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.
摘要翻译： 公开了使用极性超临界溶剂显影或除去嵌段共聚物膜的选择区域以溶解选择部分的方法。 在一个实施方案中，极性超临界溶剂包括氯二氟甲烷，其可以使用超临界二氧化碳（CO 2 CO 2）作为载体或氯二氟乙烷本身以超临界形式暴露于嵌段共聚物膜。 本发明还包括形成纳米结构的方法，包括将聚合物膜暴露于极性超临界溶剂以形成至少一部分聚合物膜。 本发明还包括使用极性超临界溶剂除去聚（甲基丙烯酸甲酯-b-苯乙烯）（PMMA-b-S）基抗蚀剂的方法。
-
44.发明授权Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent 有权使用极性超临界溶剂开发或除去嵌段共聚物或PMMA-b-S基抗蚀剂公开(公告)号：US07407554B2
公开(公告)日：2008-08-05
申请号：US10907688
申请日：2005-04-12
CPC分类号： G03F7/168 , G03F7/325 , Y10S438/922 , Y10S977/733 , Y10S977/734
摘要： Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO2) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.
摘要翻译： 公开了使用极性超临界溶剂显影或除去嵌段共聚物膜的选择区域以溶解选择部分的方法。 在一个实施方案中，极性超临界溶剂包括氯二氟甲烷，其可以使用超临界二氧化碳（CO 2 CO 2）作为载体或氯二氟乙烷本身以超临界形式暴露于嵌段共聚物膜。 本发明还包括形成纳米结构的方法，包括将聚合物膜暴露于极性超临界溶剂以形成至少一部分聚合物膜。 本发明还包括使用极性超临界溶剂除去聚（甲基丙烯酸甲酯-b-苯乙烯）（PMMA-b-S）基抗蚀剂的方法。
-
45.发明授权公开(公告)号：US06864180B2
公开(公告)日：2005-03-08
申请号：US09969363
申请日：2001-10-02
申请人： Darryl D. Restaino , Delores Bennett , John A. Fitzsimmons , John Fritche , Jeffrey C. Hedrick , Chih-Chien Liu , Shahab Siddiqui , Christy S. Tyberg
发明人： Darryl D. Restaino , Delores Bennett , John A. Fitzsimmons , John Fritche , Jeffrey C. Hedrick , Chih-Chien Liu , Shahab Siddiqui , Christy S. Tyberg
IPC分类号： H01L21/311
CPC分类号： H01L21/31138 , H01L21/31111
摘要： A method for removing a dielectric layer formed upon a semiconductor substrate is disclosed. In an exemplary embodiment of the invention, the method includes subjecting the dielectric layer to a dry etch process and subjecting an adhesion promoter layer underneath the dielectric layer to a wet etch process.
摘要翻译： 公开了一种去除在半导体衬底上形成的电介质层的方法。 在本发明的示例性实施例中，该方法包括对介电层进行干蚀刻工艺，并对介电层下面的粘附促进剂层进行湿蚀刻工艺。
-
-
-
-
搜索结果
45 条记录 (耗时 0.024 秒)
