Acoustic resonator device
    41.
    发明授权
    Acoustic resonator device 有权
    声谐振器装置

    公开(公告)号:US07550900B2

    公开(公告)日:2009-06-23

    申请号:US11009688

    申请日:2004-12-10

    CPC classification number: H03H9/587 H03H9/564

    Abstract: Acoustic resonator device (1) includes an active element (6) and a support provided with a membrane (5). The active element (6) is provided with at least one piezoelectric layer (10) and is surmounted by a multilayer stack (12). The multilayer stack (12) is provided with at least three layers, including at least one layer (15) of high acoustic impedance and at least one layer (13) of low acoustic impedance. An integrated circuit including at least one such acoustic resonator device is also disclosed.

    Abstract translation: 声谐振器装置(1)包括有源元件(6)和具有膜(5)的支撑件。 有源元件(6)设置有至少一个压电层(10),并被多层叠层(12)所覆盖。 多层堆叠(12)设置有至少三层,包括至少一层高声阻抗层(15)和至少一层低声阻抗层(13)。 还公开了包括至少一个这样的声谐振器装置的集成电路。

    Method for making an electromechanical component on a plane substrate
    42.
    发明申请
    Method for making an electromechanical component on a plane substrate 有权
    在平面基板上制造机电部件的方法

    公开(公告)号:US20080076211A1

    公开(公告)日:2008-03-27

    申请号:US11904859

    申请日:2007-09-27

    Abstract: Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence: formation of the substrate comprising one silicon area partly covered by two insulating areas, formation of a sacrificial silicon and germanium alloy layer by selective epitaxy starting from the uncovered part of the silicon area, formation of a strongly doped silicon layer by epitaxy, comprising a monocrystalline area arranged on said sacrificial layer and two polycrystalline areas arranged on insulating areas, simultaneous formation of the vibrating structure and actuation electrodes, by etching of a predetermined pattern in the monocrystalline area designed to form spaces between the electrodes and the vibrating structure, elimination of said sacrificial silicon and germanium alloy layer by selective etching.

    Abstract translation: 一种用于在平面基板上制造机电部件并且包括在所述基板和致动电极的平面中振动的至少一个结构的方法。 该方法至少包括以下步骤:基底的形成,其包括由两个绝缘区域部分覆盖的一个硅区域,通过从硅区域的未覆盖部分开始的选择性外延形成牺牲硅和锗合金层,形成 通过外延的强掺杂硅层,包括布置在所述牺牲层上的单晶区域和布置在绝缘区域上的两个多晶区域,同时形成振动结构和致动电极,通过在设计成形成空间的单晶区域中蚀刻预定图案 在电极和振动结构之间,通过选择性蚀刻消除所述牺牲硅和锗合金层。

    COUPLED LAMB WAVE RESONATORS FILTER
    43.
    发明申请
    COUPLED LAMB WAVE RESONATORS FILTER 有权
    联轴器喇叭波共振器滤波器

    公开(公告)号:US20080048804A1

    公开(公告)日:2008-02-28

    申请号:US11845268

    申请日:2007-08-27

    CPC classification number: H03H9/02228 Y10T29/42

    Abstract: A coupled Lamb wave resonator filter includes first and second Lamb wave resonators. The first Lamb wave resonator includes a first resonant layer, and first and second electrodes on opposite sides of the first resonant layer. The second Lamb wave resonator includes a second resonant layer, and third and fourth electrodes on opposite sides of the second resonant layer. One of the sides of the first resonant layer belongs to a plane parallel to a plane corresponding to one of the sides of the second resonant layer. Both planes pass through the third and fourth electrodes of the second Lamb wave resonator. A periodic lattice acoustically couples the first and second resonant layers.

    Abstract translation: 耦合兰姆波谐振滤波器包括第一和第二兰姆波谐振器。 第一兰姆波谐振器包括第一谐振层,以及在第一谐振层的相对侧上的第一和第二电极。 第二兰姆波谐振器包括第二谐振层,第二谐振层的相对侧上的第三和第四电极。 第一共振层的一个侧面属于平行于与第二共振层的一个侧面相对应的平面的平面。 两个平面通过第二兰姆波谐振器的第三和第四电极。 周期性晶格声耦合第一和第二谐振层。

    Bulk acoustic resonator with matched resonance frequency and fabrication process
    44.
    发明授权
    Bulk acoustic resonator with matched resonance frequency and fabrication process 有权
    具有匹配谐振频率和制造工艺的体声波谐振器

    公开(公告)号:US07310029B2

    公开(公告)日:2007-12-18

    申请号:US10883690

    申请日:2004-07-06

    Abstract: The resonator comprises a piezoelectric layer arranged between two electrodes. An electrical heating resistor is arranged in thermal contact with at least one of the electrodes. Temporary heating of the electrode enables the material constituting the electrode to be partially evaporated, so as to thin the electrode and thus adjust the resonance frequency. Measurement of the resonance frequency in the course of evaporation enables the heating to be interrupted when the required resonance frequency is obtained. One of the electrodes can be arranged on a substrate formed by an acoustic Bragg grating. The resonator can comprise a substrate comprising a cavity whereon one of the electrodes is at least partially arranged.

    Abstract translation: 谐振器包括布置在两个电极之间的压电层。 电加热电阻器布置成与至少一个电极热接触。 电极的暂时加热使得构成电极的材料部分蒸发,从而使电极变薄,从而调节谐振频率。 在蒸发过程中谐振频率的测量使得当获得所需的共振频率时能够中断加热。 一个电极可以布置在由声布拉格光栅形成的基板上。 谐振器可以包括基底,其包括其中一个电极至少部分地布置的空腔。

    Method for forming a tunable piezoelectric microresonator
    45.
    发明授权
    Method for forming a tunable piezoelectric microresonator 有权
    形成可调谐压电微谐振器的方法

    公开(公告)号:US07179392B2

    公开(公告)日:2007-02-20

    申请号:US10794527

    申请日:2004-03-05

    CPC classification number: H03H9/173 H03H3/04 H03H2003/0414 Y10T29/42

    Abstract: A process for manufacturing a resonator including the steps of: forming on an insulating substrate a first portion of a conductive material and a second portion of another material on the first portion; forming an insulating layer having its upper surface flush with the upper part of the second portion; forming by a succession of depositions and etchings a beam of a conductive material above the second portion, the beam ends being on the insulating layer on either side of the second portion, the upper surface of the second portion being exposed on either side of the beam, a third portion of a piezoelectric material on the beam and a fourth portion of a conductive material on the third portion above the beam portion located above the second portion; and removing the second portion.

    Abstract translation: 一种用于制造谐振器的方法,包括以下步骤:在绝缘基板上形成第一部分上的导电材料的第一部分和另一材料的第二部分; 形成其上表面与所述第二部分的上部齐平的绝缘层; 通过一系列沉积和蚀刻形成第二部分上方的导电材料束,光束端在第二部分的任一侧上的绝缘层上,第二部分的上表面暴露在光束的任一侧上 ,所述梁上的压电材料的第三部分和位于所述第二部分上方的所述梁部分上方的所述第三部分上的导电材料的第四部分; 并移除第二部分。

    Bulk acoustic resonator with matched resonance frequency and fabrication process
    47.
    发明申请
    Bulk acoustic resonator with matched resonance frequency and fabrication process 有权
    具有匹配谐振频率和制造工艺的体声波谐振器

    公开(公告)号:US20050028336A1

    公开(公告)日:2005-02-10

    申请号:US10883690

    申请日:2004-07-06

    Abstract: The resonator comprises a piezoelectric layer arranged between two electrodes. An electrical heating resistor is arranged in thermal contact with at least one of the electrodes. Temporary heating of the electrode enables the material constituting the electrode to be partially evaporated, so as to thin the electrode and thus adjust the resonance frequency. Measurement of the resonance frequency in the course of evaporation enables the heating to be interrupted when the required resonance frequency is obtained. One of the electrodes can be arranged on a substrate formed by an acoustic Bragg grating. The resonator can comprise a substrate comprising a cavity whereon one of the electrodes is at least partially arranged.

    Abstract translation: 谐振器包括布置在两个电极之间的压电层。 电加热电阻器布置成与至少一个电极热接触。 电极的暂时加热使得构成电极的材料部分蒸发,从而使电极变薄,从而调节谐振频率。 在蒸发过程中谐振频率的测量使得当获得所需的共振频率时能够中断加热。 一个电极可以布置在由声布拉格光栅形成的基板上。 谐振器可以包括基底,其包括其中一个电极至少部分地布置的空腔。

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