公开(公告)号：US20130286743A1

公开(公告)日：2013-10-31

申请号：US13925192

申请日：2013-06-24

Applicant: Micron Technology, Inc.

Inventor： Paul D. Ruby ,  Violante Moschiano ,  Giovanni Santin

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3459

Abstract: Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method includes applying voltages to data lines associated with different groups of memory cells during a programming operation. Such a method applies the voltages to the data lines associated with a last group of memory cells being programmed in a different fashion from the other groups of memory cells after the other groups of memory cells have been programmed. Other embodiments including additional memory devices and methods are described.

公开(公告)号：US20130201764A1

公开(公告)日：2013-08-08

申请号：US13834412

申请日：2013-03-15

Applicant: Micron Technology, Inc.

Inventor： Violante Moschiano ,  Giovanni Santin

IPC: G11C16/04

CPC classification number: G11C16/04 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3454 ,  G11C16/3459

Abstract: Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method includes applying different voltages to data lines associated with different memory cells based on threshold voltages of the memory cells in an erased state. Other embodiments including additional memory devices and methods are described.

Abstract translation: 一些实施例包括存储器设备和编程存储器设备的存储器单元的方法。 一种这样的方法包括基于处于擦除状态的存储器单元的阈值电压将不同的电压施加到与不同存储器单元相关联的数据线。 描述包括附加存储器件和方法的其它实施例。