公开(公告)号：US09577010B2

公开(公告)日：2017-02-21

申请号：US14189265

申请日：2014-02-25

申请人： MICRON TECHNOLOGY, INC.

发明人： Samuele Sciarrillo

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L27/2481 ,  H01L27/2427 ,  H01L27/2445 ,  H01L27/2454 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675

摘要： The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a memory device of the memory array comprises a substrate and a memory cell stack formed between and electrically connected to first and second conductive lines. The memory cell stack comprises a first memory element over the substrate and a second memory element formed over the first element, wherein one of the first and second memory elements comprises a storage element and the other of the first and second memory elements comprises a selector element. The memory cell stack additionally comprises a first pair of sidewalls opposing each other and a second pair of sidewalls opposing each other and intersecting the first pair of sidewalls. The memory device additionally comprises first protective dielectric insulating materials formed on a lower portion of the first pair of sidewalls and an isolation dielectric formed on the first protective dielectric insulating material and further formed on an upper portion of the first pair of sidewalls.

摘要翻译： 所公开的技术通常涉及集成电路器件，特别涉及交叉点存储器阵列及其制造方法。 在一个方面，存储器阵列的存储器件包括衬底和形成在电连接到第一和第二导电线之间的存储单元组。 存储单元堆叠包括衬底上的第一存储器元件和形成在第一元件上的第二存储器元件，其中第一和第二存储元件中的一个包括存储元件，第一和第二存储元件中的另一个包括选择器元件 。 存储单元堆叠还包括彼此相对的第一对侧壁和彼此相对并与第一对侧壁相交的第二对侧壁。 存储器件还包括形成在第一对侧壁的下部上的第一保护介电绝缘材料和形成在第一保护介电绝缘材料上并进一步形成在第一对侧壁的上部上的隔离电介质。

公开(公告)号：US20160104837A1

公开(公告)日：2016-04-14

申请号：US14972152

申请日：2015-12-17

申请人： Micron Technology, Inc.

发明人： Marcello Ravasio ,  Samuele Sciarrillo ,  Andrea Gotti

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H01L45/124 ,  H01L21/28 ,  H01L21/3213 ,  H01L27/1052 ,  H01L27/222 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/144 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1675

摘要： Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element. A middle electrode is formed between the memory element and the switch element. An outside electrode is formed adjacent the switch element or the memory element at a location other than between the memory element and the switch element. A lateral dimension of the middle electrode is different than a lateral dimension of the outside electrode.