公开(公告)号：US20160308117A1

公开(公告)日：2016-10-20

申请号：US15187488

申请日：2016-06-20

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Witold Kula ,  Wayne I. Kinney

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods of forming memory cells, magnetic memory cell structures, and arrays of magnetic memory cell structures are disclosed. Embodiments of the methods include patterning a precursor structure to form a stepped structure including at least an upper discrete feature section and a lower feature section with a broader width, length, or both than the upper discrete feature section. The method uses patterning acts directed along a first axis, e.g., an x-axis, and then along a second axis, e.g., a y-axis, that is perpendicular to or about perpendicular to the first axis. The patterning acts may therefore allow for more uniformity between a plurality of formed, neighboring cell core structures, even at dimensions below about thirty nanometers. Magnetic memory structures and memory cell arrays are also disclosed.

Abstract translation: 公开了形成存储单元，磁存储单元结构和磁存储单元结构阵列的方法。 方法的实施例包括图案化前体结构以形成包括至少上部离散特征部分和具有更宽的宽度，长度或两者比较高离散特征部分的下部特征部分的阶梯式结构。 该方法使用沿着第一轴线例如x轴，然后沿着垂直于第一轴线或垂直于第一轴线的第二轴线，例如y轴定向的图案化动作。 因此，即使在低于约三十纳米的尺寸下，图案化动作也可允许在多个形成的相邻电池芯结构之间的更均匀性。 还公开了磁存储器结构和存储单元阵列。

公开(公告)号：US20150214472A1

公开(公告)日：2015-07-30

申请号：US14685236

申请日：2015-04-13

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Wayne I. Kinney

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11C11/15 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: Memory cells including cell cores having free regions are disclosed. The free regions exhibit a strain that affects a magnetization orientation within the cell core. A stressor structure may exert a stress upon at least a portion of the cell core to effect the strain state of the free region. Also disclosed are semiconductor device structures and systems including such memory cells as well as methods for forming such memory cells.

Abstract translation: 公开了包括具有自由区域的单元芯的存储单元。 自由区域表现出影响细胞核心内的磁化取向的应变。 应力结构可能对细胞芯的至少一部分施加应力以实现自由区的应变状态。 还公开了包括这种存储单元的半导体器件结构和系统以及用于形成这种存储单元的方法。

公开(公告)号：US20150028439A1

公开(公告)日：2015-01-29

申请号：US13948839

申请日：2013-07-23

Applicant: Micron Technology, Inc.

Inventor： Witold Kula ,  Wayne I. Kinney ,  Gurtej S. Sandhu

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

Abstract translation: 磁性电池芯包括具有多个磁性区域的种子区域和其上的多个非磁性区域。 种子区域提供了能够形成具有能够形成具有期望的晶体结构的上覆自由区域的微结构的上覆非磁性区域的模板。 自由区域设置在两个非磁性区域之间，这两个非磁性区域都可以被配置成诱导表面/界面磁各向异性。 因此，该结构被配置为具有高的磁各向异性强度，高能势垒，高隧道磁阻，低编程电流，低电池到电池的电阻变化，以及磁特性中的低电池到电池的变化。 还公开了制造方法，存储器阵列，存储器系统和电子系统。