公开(公告)号：US07167612B2

公开(公告)日：2007-01-23

申请号：US10745641

申请日：2003-12-29

申请人： Chang Kyu Kim ,  Myung Lae Lee ,  Chang Auck Choi ,  Chi Hoon Jun

发明人： Chang Kyu Kim ,  Myung Lae Lee ,  Chang Auck Choi ,  Chi Hoon Jun

IPC分类号： G02B6/26 ,  G02B6/42 ,  G02B27/00 ,  G02B1/10 ,  G02B5/28

CPC分类号： G02B6/29358 ,  G02B6/29389 ,  G02B6/29395 ,  G02B6/32

摘要： A wavelength tunable filter capable of being driven such that reflecting mirrors move more distant as well as closer by using the principle that a direction of the electromagnetic forces changes depending on the direction of the current flowing perpendicular to the external magnetic field. According to the wavelength tunable filter of the present invention, when it is necessary to have the wavelength tuning range and mechanical structure similar to the conventional wavelength tunable filter driven in only one direction, it is possible to lower the maximum force needed to drive the filter to a half, and reduce a probability that a pull-in phenomenon occurs. On the other hand, it is possible to reduce a wavelength change time of the element by increasing a resonant frequency when the same wavelength tuning ranges are implemented by using the same maximum driving forces.

摘要翻译： 能够被驱动的波长可调滤波器，使得反射镜通过使用电磁力的方向根据垂直于外部磁场流动的电流的方向而变化的原理移动得更远和更近。 根据本发明的波长可调滤波器，当需要使波长调谐范围和机械结构类似于在一个方向上驱动的常规波长可调滤波器时，可以降低驱动滤波器所需的最大力 降低引入现象发生的可能性。 另一方面，当通过使用相同的最大驱动力来实现相同的波长调谐范围时，可以通过增加谐振频率来减小元件的波长变化时间。

公开(公告)号：US07116863B2

公开(公告)日：2006-10-03

申请号：US10819271

申请日：2004-04-07

申请人： Chang Kyu Kim ,  Myung Lae Lee ,  Chang Auck Choi ,  Chi Hoon Jun ,  Yun Tae Kim

发明人： Chang Kyu Kim ,  Myung Lae Lee ,  Chang Auck Choi ,  Chi Hoon Jun ,  Yun Tae Kim

IPC分类号： G02B6/26

CPC分类号： G02B6/29358 ,  G02B6/29395

摘要： Provided is a wavelength tunable optical filter of a micro-electro-mechanical system (MEMS). The wavelength tunable optical filter comprises two optical fibers or optical waveguides having their optical axes aligned to each other, two lens for collimating light at leading ends of the optical fibers or optical waveguides, two or more mirrors formed on a substrate, thermal actuators supporting at least one of the mirrors, wherein one of the mirrors is actuated by thermal expansion of the actuator. Because all mirrors are formed on a substrate, a manufacturing process is simple and an initial resonance wavelength can be precisely adjusted. Since the thermal expansion is generated by the electrical current directly flowing through the thermal actuators, it can be actuated by a low consumption power. Also, since an electrostatic force is not used to move the mirrors, a sticking phenomenon between the mirrors does not occur, and the wavelength can be tunable in a wide range. Since the planar mirrors are arranged in parallel, the light alignment is easily performed, the line width is constant and the insertion loss is low.

摘要翻译： 提供了微机电系统（MEMS）的波长可调光滤波器。 波长可调光滤波器包括两个光纤或光波导，其光轴彼此对准，用于准直光纤​​或光波导前端的光的两个透镜，形成在基板上的两个或更多个反射镜，支持在 至少一个反射镜，其中一个反射镜由致动器的热膨胀致动。 因为所有的反射镜都形成在基板上，所以制造工艺简单，可以精确调节初始共振波长。 由于热膨胀是由直接流过热致动器的电流产生的，因此可以通过低功耗来致动。 此外，由于不使用静电力来移动反射镜，所以不会发生反射镜之间的粘附现象，并且波长可以在宽范围内可调。 由于平面镜平行配置，因此容易进行光对准，线宽恒定，插入损耗低。

公开(公告)号：US06292084B1

公开(公告)日：2001-09-18

申请号：US09136613

申请日：1998-08-20

申请人： Chang Auck Choi ,  Jong Hyun Lee ,  Won Ick Jang ,  Yong Il Lee ,  Jong Tae Baek ,  Hyung Joun Yoo

发明人： Chang Auck Choi ,  Jong Hyun Lee ,  Won Ick Jang ,  Yong Il Lee ,  Jong Tae Baek ,  Hyung Joun Yoo

IPC分类号： H01F500

CPC分类号： H01F5/003 ,  H01F17/0033

摘要： A fine inductor having a 3-dimensional coil structure is disclosed. The inductor includes an insulating layer having a groove, a plurality of first conductive patterns wherein the respective first conductive patterns cover bottom and both walls of the groove formed in the insulating layer, both ends of the respective first conductive patterns are extended over upper surface of both sides of the groove, and each of the first conductive patterns is disposed at a predetermined space between adjacent first conductive patterns, and a plurality of second conductive patterns wherein one ends of the respective second conductive patterns are connected to the one ends of the first conductive patterns extended over upper surface and the other ends of the respective second conductive patterns are connected to the other ends of the adjacent first conductive patterns extended over upper surface, thereby forming a coil structure together with the first conductive patterns.

摘要翻译： 公开了具有3维线圈结构的精细电感器。 电感器包括具有凹槽的绝缘层，多个第一导电图案，其中相应的第一导电图案覆盖形成在绝缘层中的凹槽的底部和两个壁，各个第一导电图案的两个端部延伸到 沟槽的两侧，并且每个第一导电图案设置在相邻的第一导电图案之间的预定空间处，以及多个第二导电图案，其中各个第二导电图案的一端连接到第一导电图案的一端 在上表面延伸的导电图案和相应的第二导电图案的另一端连接到在上表面上延伸的相邻的第一导电图案的另一端，从而与第一导电图案一起形成线圈结构。

公开(公告)号：US08638110B2

公开(公告)日：2014-01-28

申请号：US12675111

申请日：2008-07-21

申请人： Sung Sik Lee ,  Myung Lae Lee ,  Gunn Hwang ,  Chang Auck Choi

发明人： Sung Sik Lee ,  Myung Lae Lee ,  Gunn Hwang ,  Chang Auck Choi

IPC分类号： G01R27/26

CPC分类号： G01D5/24

摘要： There is provided a high resolution circuit for converting a capacitance-to-time deviation including a capacitance deviation detecting unit generating two detection signals having a phase difference corresponding to variations of capacitance of an micro electro mechanical system (MEMS) sensor; a capacitance deviation amplifying unit dividing frequencies of the two detection signals to amplify the phase difference corresponding to the capacitance deviation; and a time signal generating unit generating a time signal having a pulse width corresponding to the amplified phase difference.

摘要翻译： 提供了一种用于转换电容 - 时间偏差的高分辨率电路，包括产生具有与微机电系统（MEMS）传感器的电容变化相对应的相位差的两个检测信号的电容偏差检测单元; 电容偏差放大单元，对所述两个检测信号的频率进行分频，以放大与所述电容偏差对应的相位差; 以及时间信号生成单元，生成具有与放大后的相位差对应的脉冲宽度的时间信号。

公开(公告)号：US07971633B2

公开(公告)日：2011-07-05

申请号：US11577233

申请日：2005-12-09

申请人： Seok Hwan Moon ,  Gunn Hwang ,  Sung Weon Kang ,  Chang Auck Choi

发明人： Seok Hwan Moon ,  Gunn Hwang ,  Sung Weon Kang ,  Chang Auck Choi

IPC分类号： H05K7/20

CPC分类号： H05K7/20336 ,  H01L23/427 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a loop type micro heat transport device including: a lower plate having a reservoir for storing operating fluid at its upper surface, an evaporating part spaced apart from the reservoir to evaporate the operating fluid, and a condensing part for condensing vapor evaporated from the evaporating part; and an upper plate engaged with an upper surface of the lower plate and formed at a position corresponding to the evaporating part and the condensing part, and including a vapor space having a vapor line through which the vapor evaporated from the evaporating part is transported to the condensing part, wherein the operating fluid is circulated through the reservoir, the evaporating part, and the condensing part. Therefore, it is possible to remarkably improve productivity since its simple structure helps to make the manufacture simple, as well as to improve cooling performance and enabling long distance heat transport.

摘要翻译： 本发明提供一种环型微热输送装置，其特征在于，具有：下板，其具有用于在其上表面存储工作流体的储存器，与所述储存器间隔开的蒸发部，蒸发所述工作流体;以及冷凝部， 蒸发部分 以及与所述下板的上表面接合并形成在与所述蒸发部和所述冷凝部对应的位置的上板，并且包括具有蒸气管的蒸气空间，蒸发部蒸发的蒸汽通过所述蒸气管路被输送到所述蒸发部 冷凝部件，其中工作流体循环通过储存器，蒸发部件和冷凝部件。 因此，由于其简单的结构有助于使制造简单，并且提高冷却性能并且能够进行长距离的热输送，因此可以显着提高生产率。

公开(公告)号：US20110133758A1

公开(公告)日：2011-06-09

申请号：US12675111

申请日：2008-07-21

申请人： Sung Sik Lee ,  Myung Lae Lee ,  Gunn Hwang ,  Chang Auck Choi

发明人： Sung Sik Lee ,  Myung Lae Lee ,  Gunn Hwang ,  Chang Auck Choi

IPC分类号： G01R27/26

CPC分类号： G01D5/24

摘要： There is provided a high resolution circuit for converting a capacitance-to-time deviation including a capacitance deviation detecting unit generating two detection signals having a phase difference corresponding to variations of capacitance of an micro electro mechanical system (MEMS) sensor; a capacitance deviation amplifying unit dividing frequencies of the two detection signals to amplify the phase difference corresponding to the capacitance deviation; and a time signal generating unit generating a time signal having a pulse width corresponding to the amplified phase difference.

摘要翻译： 提供了一种用于转换电容 - 时间偏差的高分辨率电路，包括产生具有与微机电系统（MEMS）传感器的电容变化相对应的相位差的两个检测信号的电容偏差检测单元; 电容偏差放大单元，对所述两个检测信号的频率进行分频，以放大与所述电容偏差对应的相位差; 以及时间信号生成单元，生成具有与放大后的相位差对应的脉冲宽度的时间信号。

公开(公告)号：US07928388B2

公开(公告)日：2011-04-19

申请号：US12648161

申请日：2009-12-28

申请人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Chang Auck Choi

发明人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Chang Auck Choi

IPC分类号： G01J5/00

CPC分类号： G01J5/20

摘要： In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity.

摘要翻译： 在根据本发明的红外线检测传感器中，除去构成支撑臂区域中的感测电极的上部的所有材料，使得支撑臂具有低导热性。 结果，红外线传感器结构的导热性降低，红外线检测传感器具有良好的灵敏度。

公开(公告)号：US20110049366A1

公开(公告)日：2011-03-03

申请号：US12859466

申请日：2010-08-19

申请人： Woo Seok Yang ,  Sang Hoon Cheon ,  Seong Mok Cho ,  Ho Jun Ryu ,  Chang Auck Choi

发明人： Woo Seok Yang ,  Sang Hoon Cheon ,  Seong Mok Cho ,  Ho Jun Ryu ,  Chang Auck Choi

IPC分类号： H01L31/09 ,  H01L31/18 ,  C09K3/00

CPC分类号： G01J5/04 ,  G01J5/046

摘要： A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.

摘要翻译： 提供了用于测辐射热力计的电阻材料，用于使用该材料的红外探测器的测辐射热计，以及制造测辐射热计的方法。 在电阻材料中，选自氮（N），氧（O）和锗（Ge）中的至少一种元素包括在锑（Sb）中。 电阻材料具有优异的性能，例如高温电阻系数（TCR），低电阻率，低噪声常数，并且易于通过通常用于互补金属氧化物半导体（CMOS）工艺中的溅射在薄膜结构中形成， 因此它可以用作非制冷红外探测器的辐射热计的电阻器，从而为红外检测器提供出色的温度精度。

公开(公告)号：US20100251826A1

公开(公告)日：2010-10-07

申请号：US12745745

申请日：2008-04-21

申请人： Chang Auck Choi ,  Chang Han Je ,  Gunn Hwang ,  Youn Tae Kim ,  Sung Hae Jung ,  Myung Lae Lee ,  Sung Sik Lee ,  Seok Hwan Moon

发明人： Chang Auck Choi ,  Chang Han Je ,  Gunn Hwang ,  Youn Tae Kim ,  Sung Hae Jung ,  Myung Lae Lee ,  Sung Sik Lee ,  Seok Hwan Moon

IPC分类号： G01L9/06 ,  H01L41/22

CPC分类号： G01L9/0042 ,  Y10T29/42 ,  Y10T29/49

摘要： A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.

摘要翻译： 提供一种微型半导体型压力传感器及其制造方法。 微型半导体型压力传感器通过蚀刻衬底的空腔形成区域以形成多个沟槽来实现，通过热氧化工艺氧化多个沟槽以形成空腔形成氧化物层，形成膜 在形成空腔的氧化物层和衬底的上部上形成一层形成材料层，在膜形成材料层中形成多个蚀刻孔，通过多个蚀刻孔去除腔形成氧化物层，以形成埋入腔 在所述基板中，在所述膜形成材料层的上部形成膜增强层，以形成用于封闭所述空腔的膜，并且在所述膜的上部形成由压阻材料制成的敏感膜。

公开(公告)号：US07745308B2

公开(公告)日：2010-06-29

申请号：US12417114

申请日：2009-04-02

申请人： Myung Lae Lee ,  Jong Hyun Lee ,  Sung Sik Yun ,  Dae Hun Jeong ,  Gunn Hwang ,  Chang Auck Choi ,  Chang Han Je ,  Jae Yong An

发明人： Myung Lae Lee ,  Jong Hyun Lee ,  Sung Sik Yun ,  Dae Hun Jeong ,  Gunn Hwang ,  Chang Auck Choi ,  Chang Han Je ,  Jae Yong An

IPC分类号： H01L21/00

CPC分类号： B81C1/00619 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2201/0133

摘要： A method of fabricating a micro-vertical structure is provided. The method includes bonding a second crystalline silicon (Si) substrate onto a first crystalline Si substrate by interposing an insulating layer pattern and a cavity, etching the second crystalline Si substrate using a deep reactive ion etch (DRIE) process along a [111] crystal plane vertical to the second crystalline Si substrate, and etching an etched vertical surface of the second crystalline Si substrate using a crystalline wet etching process to improve the surface roughness and flatness of the etched vertical surface. As a result, no morphological defects occur on the etched vertical surface. Also, footings do not occur at an etch end-point due to the insulating layer pattern. In addition, the micro-vertical structure does not float in the air but is fixed to the first crystalline Si substrate, thereby facilitating subsequent processes.

摘要翻译： 提供一种制造微垂直结构的方法。 该方法包括通过插入绝缘层图案和空腔将第二晶体硅（Si）衬底接合到第一晶体Si衬底上，使用沿[111]晶体的深反应离子蚀刻（DRIE）工艺蚀刻第二晶体Si衬底 垂直于第二晶体Si衬底，并且使用结晶湿蚀刻工艺蚀刻第二晶体Si衬底的蚀刻垂直表面，以改善蚀刻垂直表面的表面粗糙度和平坦度。 结果，蚀刻的垂直表面上没有形成形态缺陷。 此外，由于绝缘层图案，在蚀刻终点处不发生基脚。 此外，微垂直结构不会浮在空气中，而是固定在第一晶体Si衬底上，从而有助于后续工艺。