公开(公告)号：US06292084B1

公开(公告)日：2001-09-18

申请号：US09136613

申请日：1998-08-20

申请人： Chang Auck Choi ,  Jong Hyun Lee ,  Won Ick Jang ,  Yong Il Lee ,  Jong Tae Baek ,  Hyung Joun Yoo

发明人： Chang Auck Choi ,  Jong Hyun Lee ,  Won Ick Jang ,  Yong Il Lee ,  Jong Tae Baek ,  Hyung Joun Yoo

IPC分类号： H01F500

CPC分类号： H01F5/003 ,  H01F17/0033

摘要： A fine inductor having a 3-dimensional coil structure is disclosed. The inductor includes an insulating layer having a groove, a plurality of first conductive patterns wherein the respective first conductive patterns cover bottom and both walls of the groove formed in the insulating layer, both ends of the respective first conductive patterns are extended over upper surface of both sides of the groove, and each of the first conductive patterns is disposed at a predetermined space between adjacent first conductive patterns, and a plurality of second conductive patterns wherein one ends of the respective second conductive patterns are connected to the one ends of the first conductive patterns extended over upper surface and the other ends of the respective second conductive patterns are connected to the other ends of the adjacent first conductive patterns extended over upper surface, thereby forming a coil structure together with the first conductive patterns.

摘要翻译： 公开了具有3维线圈结构的精细电感器。 电感器包括具有凹槽的绝缘层，多个第一导电图案，其中相应的第一导电图案覆盖形成在绝缘层中的凹槽的底部和两个壁，各个第一导电图案的两个端部延伸到 沟槽的两侧，并且每个第一导电图案设置在相邻的第一导电图案之间的预定空间处，以及多个第二导电图案，其中各个第二导电图案的一端连接到第一导电图案的一端 在上表面延伸的导电图案和相应的第二导电图案的另一端连接到在上表面上延伸的相邻的第一导电图案的另一端，从而与第一导电图案一起形成线圈结构。

公开(公告)号：US5796804A

公开(公告)日：1998-08-18

申请号：US794906

申请日：1997-02-04

申请人： Young Jin Jeon ,  Sang Soo Choi ,  Hai Bin Chung ,  Jong Hyun Lee ,  Hyung Joun Yoo

发明人： Young Jin Jeon ,  Sang Soo Choi ,  Hai Bin Chung ,  Jong Hyun Lee ,  Hyung Joun Yoo

IPC分类号： G03F1/14 ,  G03F7/20 ,  G21K1/10 ,  G21K5/08

CPC分类号： G03F7/70691 ,  G21K1/10

摘要： A X-ray mask structure which reduces the distortion of the membrane, the X-ray mask structure including, a mask substrate having an opening in the central part thereof, a membrane formed on the mask substrate, the membrane having the chip site on which absorbers are arranged according to a desired pattern of a semiconductor device, and a support ring for supporting the mask substrate, which is defined by a plurality of fragments.

摘要翻译： 一种减少膜变形的X射线掩模结构，所述X射线掩模结构包括在其中心部分具有开口的掩模基板，形成在掩模基板上的膜，其上具有芯片位置的膜 吸收体根据半导体器件的期望图案和用于支撑由多个片段限定的掩模衬底的支撑环布置。

公开(公告)号：US6101047A

公开(公告)日：2000-08-08

申请号：US132303

申请日：1998-08-11

申请人： Hai Bin Chung ,  Jong Soo Kim ,  Kag Hyeon Lee ,  Doh Hoon Kim ,  Sang Soo Choi ,  Hyung Joun Yoo

发明人： Hai Bin Chung ,  Jong Soo Kim ,  Kag Hyeon Lee ,  Doh Hoon Kim ,  Sang Soo Choi ,  Hyung Joun Yoo

IPC分类号： G02B17/08 ,  G03F7/20 ,  G02B17/00

CPC分类号： G02B17/0892 ,  G02B17/08 ,  G03F7/70225

摘要： Provided with an optical system which is applicable to an exposure apparatus used in the manufacture of semiconductors and includes a combination of a spherical mirror having a function of refraction and lenses for astigmation control, using a CaF.sub.2 lens as the last lens, thereby making it possible to use a light source operating at a short wavelength and a wide bandwidth, enhance the life of the optical system, and transfer the enlarge pattern of a mask onto the wafer for realizing fine line width.

摘要翻译： 提供了适用于半导体制造中使用的曝光装置的光学系统，并且包括具有折射功能的球面镜和用于散光控制的透镜的组合，使用CaF2透镜作为最后的透镜，从而使其成为可能 使用在短波长和宽带宽下工作的光源，增加光学系统的寿命，并且将掩模的放大图案转移到晶片上以实现细线宽度。

公开(公告)号：US6137219A

公开(公告)日：2000-10-24

申请号：US122823

申请日：1998-07-27

申请人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

发明人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

IPC分类号： H01J1/30 ,  G09G3/22 ,  H01J31/12

CPC分类号： G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  H01J2201/304 ,  H01J2201/319

摘要： A field emission display having an n-channel high voltage thin film transistor is disclosed. According to the present invention, a signal for driving pixels controls by the nHVTFT attached with each pixel, therefore, the signal voltage of row and column drivers is exceedingly decreased. As a result, it is possible to implement a field emission display capable of providing a high quality picture in a low consumption power, a low driving voltage and inexpensive to manufacture, and preventing a line cross talk using the nHVTFT. By using a cylindrical resistive body underlying a cone-shaped emitter tip, the present invention is to provide a field emission display having an excellent contollability and stability of the emission current, and a dynamic driving capability.

摘要翻译： 公开了具有n沟道高电压薄膜晶体管的场致发射显示器。 根据本发明，通过每个像素附着的nHVTFT控制用于驱动像素的信号，因此，行和列驱动器的信号电压被极大地降低。 结果，可以实现能够以低功耗，低驱动电压提供高质量图像并且制造成本低廉的场致发射显示器，并且防止使用nHVTFT的线路串扰。 通过使用锥形发射极尖端下方的圆柱形电阻体，本发明提供了具有优异的发射电流的可配置性和稳定性以及动态驱动能力的场致发射显示器。

公开(公告)号：US5953580A

公开(公告)日：1999-09-14

申请号：US925197

申请日：1997-09-08

申请人： Sung Weon Kang ,  Jin Ho Lee ,  Kyoung Ik Cho ,  Hyung Joun Yoo

发明人： Sung Weon Kang ,  Jin Ho Lee ,  Kyoung Ik Cho ,  Hyung Joun Yoo

IPC分类号： H01L21/205 ,  H01J9/02 ,  H01L20/100

CPC分类号： H01J9/025

摘要： A method of manufacturing a vacuum device utilizing a sputtering process is disclosed. According to the present invention, the vacuum device includes a silicon substrate. An emission electrode having a sharp ended tip is formed by etching the silicon substrate. An insulating layer is formed on the silicon substrate so as to make the entire structure of the emission electrode to be exposed, with the emission electrode being surrounded by the insulating layer. A gate electrode is then formed adjacent to the sharp ended tip of the emission electrode. According to the present invention, it has advantages that the emission electrode is manufactured by forming the silicon pillar using the isotropic etching and anisotropic etching and the gate electrode can be easily formed adjacent to the emission electrode by using the sputtering method after the gate insulating layer is formed. Further, the distance between the emission electrode and the gate electrode may be easily adjusted, and the vacuum device may be operated with the desired voltage by controlling the distance between the emission electrode and the gate electrode of the vacuum device.

摘要翻译： 公开了一种使用溅射工艺制造真空装置的方法。 根据本发明，真空装置包括硅基板。 通过蚀刻硅衬底形成具有尖端的尖端的发射电极。 在硅衬底上形成绝缘层，以使发射电极的整个结构被暴露，发射电极被绝缘层包围。 然后在发射电极的尖端处形成栅电极。 根据本发明，具有通过使用各向同性蚀刻和各向异性蚀刻形成硅柱来制造发射电极的优点，并且通过在栅绝缘层之后使用溅射法容易地在栅极电极附近形成栅电极 形成了。 此外，可以容易地调节发射电极和栅电极之间的距离，并且可以通过控制发射电极和真空装置的栅电极之间的距离，以期望的电压来操作真空装置。

公开(公告)号：US5878105A

公开(公告)日：1999-03-02

申请号：US915833

申请日：1997-08-21

申请人： Young Jin Jeon ,  Jin Man Jung ,  Sang Soo Choi ,  Bo Woo Kim ,  Hyung Joun Yoo

发明人： Young Jin Jeon ,  Jin Man Jung ,  Sang Soo Choi ,  Bo Woo Kim ,  Hyung Joun Yoo

IPC分类号： H01L21/027 ,  G03F1/22 ,  G03F7/20 ,  G21K5/08 ,  G21K5/00

CPC分类号： G03F1/22 ,  G03F7/707 ,  G03F7/70866 ,  G21K5/08

摘要： An X-ray mask, which is used in transferring an image formed on a patterned mask to a wafer by exposing the mask with an X-ray, comprises a supplementary substrate attached to the back side of a support ring for preventing a thermal distortion of the X-ray mask due to the difference of thermal coefficient of expansion between a mask substrate and the support ring and for improving the resistance to the external mechanical stress, the supplementary substrate being made of the same material as the mask substrate and obtained through the same processing steps as the mask substrate.

摘要翻译： 用于通过用X射线曝光掩模来将形成在图案化掩模上的图像转印到晶片上的X射线掩模包括附着到支撑环背面的补充基板，用于防止热变形 X射线掩模由于掩模基板和支撑环之间的热膨胀系数的差异，并且为了提高对外部机械应力的抵抗力，辅助基板由与掩模基板相同的材料制成，并且通过 与掩模基板相同的处理步骤。