公开(公告)号：US09673763B2

公开(公告)日：2017-06-06

申请号：US14926441

申请日：2015-10-29

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kazuo Watanabe ,  Satoshi Tanaka ,  Norio Hayashi ,  Kazuma Sugiura

IPC: H03F1/14 ,  H03F3/19 ,  H03F1/02 ,  H03F3/21 ,  H03F3/24

CPC classification number: H03F1/0205 ,  H03F1/0222 ,  H03F1/56 ,  H03F3/19 ,  H03F3/21 ,  H03F3/211 ,  H03F3/245 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/451 ,  H03F2200/516 ,  H03F2200/555 ,  H03F2200/75

Abstract: The present disclosure is to improve the power added efficiency of a power amplifier at high output power. The power amplifier includes: a first capacitor with a radio frequency signal input to one end thereof; a first transistor whose base is connected to the other end of the first capacitor to amplify the radio frequency signal; a bias circuit for supplying bias to the base of the first transistor; and a second capacitor with one end connected to the base of the first transistor and the other end connected to the emitter of the first transistor.

公开(公告)号：US20160134242A1

公开(公告)日：2016-05-12

申请号：US14926441

申请日：2015-10-29

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kazuo Watanabe ,  Satoshi Tanaka ,  Norio Hayashi ,  Kazuma Sugiura

IPC: H03F1/02 ,  H03F3/21 ,  H03F3/19

CPC classification number: H03F1/0205 ,  H03F1/0222 ,  H03F1/56 ,  H03F3/19 ,  H03F3/21 ,  H03F3/211 ,  H03F3/245 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/451 ,  H03F2200/516 ,  H03F2200/555 ,  H03F2200/75

Abstract: The present disclosure is to improve the power added efficiency of a power amplifier at high output power. The power amplifier includes: a first capacitor with a radio frequency signal input to one end thereof; a first transistor whose base is connected to the other end of the first capacitor to amplify the radio frequency signal; a bias circuit for supplying bias to the base of the first transistor; and a second capacitor with one end connected to the base of the first transistor and the other end connected to the emitter of the first transistor.

Abstract translation: 本公开是为了提高功率放大器在高输出功率下的功率附加效率。 功率放大器包括：具有输入到其一端的射频信号的第一电容器; 第一晶体管，其基极连接到第一电容器的另一端以放大射频信号; 偏置电路，用于向第一晶体管的基极提供偏置; 以及第二电容器，其一端连接到第一晶体管的基极，另一端连接到第一晶体管的发射极。