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公开(公告)号：US11515840B2
公开(公告)日：2022-11-29
申请号：US16897102
申请日：2020-06-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuo Watanabe , Satoshi Tanaka , Norio Hayashi , Kazuma Sugiura
Abstract: The present disclosure is to improve the power added efficiency of a power amplifier at high output power. The power amplifier includes: a first capacitor with a radio frequency signal input to one end thereof; a first transistor whose base is connected to the other end of the first capacitor to amplify the radio frequency signal; a bias circuit for supplying bias to the base of the first transistor; and a second capacitor with one end connected to the base of the first transistor and the other end connected to the emitter of the first transistor.
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公开(公告)号：US11784609B2
公开(公告)日：2023-10-10
申请号：US16898156
申请日：2020-06-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Tanaka , Masatoshi Hase , Norio Hayashi , Kazuo Watanabe , Yuuri Honda
CPC classification number: H03F1/0205 , H03F1/565 , H03F3/19 , H03F3/195 , H03F3/21 , H03F3/245 , H03F2200/387 , H03F2200/451
Abstract: A power amplifier circuit includes an amplifier that receives an input signal with an alternating current and outputs an output signal obtained by amplifying power of the input signal to a first node; an inductive element that is connected between the first node and a second node; and a variable capacitor that is connected between the second node and a reference potential, and whose electrostatic capacitance increases as power of the output signal increases.
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公开(公告)号：US11387796B2
公开(公告)日：2022-07-12
申请号：US16709262
申请日：2019-12-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Tanaka , Kazuo Watanabe , Norio Hayashi , Makoto Itou
Abstract: A power amplifier circuit includes a lower-stage transistor having a first power supply voltage supplied to a first terminal, a second terminal connected to ground, and a first signal supplied to a third terminal; an upper-stage transistor having a second power supply voltage supplied to a first terminal, a second signal obtained by amplifying the first signal being output from the first terminal, a second terminal connected to the first terminal of the lower-stage transistor via a first capacitor, and a third terminal connected to ground via a ground path; an inductor that connects the second terminal of the upper-stage transistor to ground; and an adjustment circuit that adjusts impedance seen from the third terminal of the upper-stage transistor. The adjustment circuit includes a second capacitor and at least one resistance element connected in series with the ground path between the third terminal of the upper-stage transistor and ground.
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公开(公告)号：US10236828B2
公开(公告)日：2019-03-19
申请号：US15684258
申请日：2017-08-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuma Sugiura , Takashi Yamada , Norio Hayashi , Satoshi Tanaka , Kenichi Shimamoto , Kazuo Watanabe
Abstract: A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.
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公开(公告)号：US09673763B2
公开(公告)日：2017-06-06
申请号：US14926441
申请日：2015-10-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuo Watanabe , Satoshi Tanaka , Norio Hayashi , Kazuma Sugiura
CPC classification number: H03F1/0205 , H03F1/0222 , H03F1/56 , H03F3/19 , H03F3/21 , H03F3/211 , H03F3/245 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2200/516 , H03F2200/555 , H03F2200/75
Abstract: The present disclosure is to improve the power added efficiency of a power amplifier at high output power. The power amplifier includes: a first capacitor with a radio frequency signal input to one end thereof; a first transistor whose base is connected to the other end of the first capacitor to amplify the radio frequency signal; a bias circuit for supplying bias to the base of the first transistor; and a second capacitor with one end connected to the base of the first transistor and the other end connected to the emitter of the first transistor.
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Patent Agency Ranking
公开(公告)号：US20160134242A1
公开(公告)日：2016-05-12
申请号：US14926441
申请日：2015-10-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuo Watanabe , Satoshi Tanaka , Norio Hayashi , Kazuma Sugiura
CPC classification number: H03F1/0205 , H03F1/0222 , H03F1/56 , H03F3/19 , H03F3/21 , H03F3/211 , H03F3/245 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2200/516 , H03F2200/555 , H03F2200/75
Abstract: The present disclosure is to improve the power added efficiency of a power amplifier at high output power. The power amplifier includes: a first capacitor with a radio frequency signal input to one end thereof; a first transistor whose base is connected to the other end of the first capacitor to amplify the radio frequency signal; a bias circuit for supplying bias to the base of the first transistor; and a second capacitor with one end connected to the base of the first transistor and the other end connected to the emitter of the first transistor.
Abstract translation: 本公开是为了提高功率放大器在高输出功率下的功率附加效率。 功率放大器包括：具有输入到其一端的射频信号的第一电容器; 第一晶体管，其基极连接到第一电容器的另一端以放大射频信号; 偏置电路，用于向第一晶体管的基极提供偏置; 以及第二电容器，其一端连接到第一晶体管的基极，另一端连接到第一晶体管的发射极。
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公开(公告)号：US20200304070A1
公开(公告)日：2020-09-24
申请号：US16897102
申请日：2020-06-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuo Watanabe , Satoshi Tanaka , Norio Hayashi , Kazuma Sugiura
Abstract: The present disclosure is to improve the power added efficiency of a power amplifier at high output power. The power amplifier includes: a first capacitor with a radio frequency signal input to one end thereof; a first transistor whose base is connected to the other end of the first capacitor to amplify the radio frequency signal; a bias circuit for supplying bias to the base of the first transistor; and a second capacitor with one end connected to the base of the first transistor and the other end connected to the emitter of the first transistor.
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公开(公告)号：US10715084B2
公开(公告)日：2020-07-14
申请号：US16136359
申请日：2018-09-20
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Tanaka , Masatoshi Hase , Norio Hayashi , Kazuo Watanabe , Yuuri Honda
Abstract: A power amplifier circuit includes an amplifier that receives an input signal with an alternating current and outputs an output signal obtained by amplifying power of the input signal to a first node; an inductive element that is connected between the first node and a second node; and a variable capacitor that is connected between the second node and a reference potential, and whose electrostatic capacitance increases as power of the output signal increases.
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公开(公告)号：US20190089307A1
公开(公告)日：2019-03-21
申请号：US16136359
申请日：2018-09-20
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Tanaka , Masatoshi Hase , Norio Hayashi , Kazuo Watanabe , Yuuri Honda
CPC classification number: H03F1/0205 , H03F1/565 , H03F3/19 , H03F3/195 , H03F3/21 , H03F3/245 , H03F2200/387 , H03F2200/451
Abstract: A power amplifier circuit includes an amplifier that receives an input signal with an alternating current and outputs an output signal obtained by amplifying power of the input signal to a first node; an inductive element that is connected between the first node and a second node; and a variable capacitor that is connected between the second node and a reference potential, and whose electrostatic capacitance increases as power of the output signal increases.
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公开(公告)号：US20180041169A1
公开(公告)日：2018-02-08
申请号：US15684258
申请日：2017-08-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuma Sugiura , Takashi Yamada , Norio Hayashi , Satoshi Tanaka , Kenichi Shimamoto , Kazuo Watanabe
CPC classification number: H03F1/0205 , H03F1/0222 , H03F3/19 , H03F3/211 , H03F3/245 , H03F2200/451 , H03F2200/516 , H03F2200/555
Abstract: A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.
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