公开(公告)号：US20160276380A1

公开(公告)日：2016-09-22

申请号：US14662655

申请日：2015-03-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Wu-Zang Yang ,  Chia-Ying Liu ,  Chih-Wei Hsiung ,  Chun-Yung Ai ,  Dyson H. Tai ,  Dominic Massetti

IPC: H01L27/146

CPC classification number: H01L27/14692 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L28/55 ,  H01L28/56 ,  H01L28/90

Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.

Abstract translation: 公开了一种图像传感器像素和图像传感器及其制造方法。 图像像素包括光敏电容器和晶体管网络。 感光电容器包括电极，导电层，电介质层和光敏半导体材料。 导电层设置在电极周围，并且介电层形成在导电层和电极之间。 感光半导体材料用于响应于图像光产生图像信号，并且设置在电介质层和电极之间。 晶体管网络被耦合以从光敏电容器的电极读出图像信号。

公开(公告)号：US20160099266A1

公开(公告)日：2016-04-07

申请号：US14505923

申请日：2014-10-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Wei Zheng ,  Chia-Ying Liu ,  Chun-Yung Ai ,  Wu-Zang Yang ,  Chih-Wei Hsiung ,  Chen-Wei Lu

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.

Abstract translation: 图像传感器包括具有多个光电二极管的半导体层。 多个隔离结构设置在多个光电二极管中的各个光电二极管之间的半导体层的背面。 多个隔离结构延伸到半导体层的背面第一深度并从半导体层的后侧延伸出第一长度。 多个滤光器设置在半导体层的背面附近，使得多个隔离结构设置在多个滤光器中的各个滤光器之间。 在半导体层和多个滤光器之间还设置防反射涂层。

公开(公告)号：US09224881B2

公开(公告)日：2015-12-29

申请号：US13856993

申请日：2013-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chih-Wei Hsiung ,  Oray Orkun Cellek ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai

IPC: H01L21/02 ,  H01L31/0216 ,  H01L27/146

CPC classification number: H01L31/02161 ,  H01L27/1462 ,  H01L27/1464

Abstract: An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer.

Abstract translation: 成像装置包括具有用于响应于入射图像光累积电荷的光敏元件的半导体衬底。 半导体衬底包括被定位成接收图像光的光接收表面。 成像装置还包括负电荷层和电荷沉没层。 负电荷层设置在半导体衬底的光接收表面附近以沿着光接收表面在半导体衬底中的累积区域中引起空穴。 电荷沉降层设置成靠近负电荷层，并且被配置为在负电荷层中保存或增加负电荷的量。 负电荷层设置在半导体衬底和电荷沉降层之间。