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公开(公告)号：US07033443B2
公开(公告)日：2006-04-25
申请号：US10402809
申请日：2003-03-28
CPC分类号： H01L21/68721 , C23C16/4586 , C23C16/463 , H01L21/67109 , H01L21/6875 , Y10T279/23
摘要： The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides cooling of a substrate by thermal conduction generally in the free molecular regime. The gas-cooled clamp comprises a clamping plate having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps are associated with a mean free path of the cooling gas therein. The gas-cooled clamp further comprises a pressure control system operable to control a backside pressure of the cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas, wherein the heat transfer coefficient of the cooling gas is primarily a function of the pressure and substantially independent of the gap distance.
摘要翻译： 本发明涉及半导体热处理装置和半导体基板的热冷却方法。 根据本发明的一个方面，公开了一种气冷夹和相关方法，其通常通过自由分子状态的热传导来提供衬底的冷却。 气冷夹具包括夹板，该夹板具有限定其间的间隙的多个突起，其中间隙的距离或深度与其中的冷却气体的平均自由路径相关联。 气冷夹具还包括压力控制系统，其可操作以控制多个间隙内的冷却气体的背侧压力，从而控制冷却气体的传热系数，其中冷却气体的传热系数主要为 压力的函数和基本上与间隙距离无关。
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公开(公告)号：US07019314B1
公开(公告)日：2006-03-28
申请号：US10967855
申请日：2004-10-18
IPC分类号： H01L21/324 , H01J37/317 , H01J49/30
CPC分类号： H01J37/3171 , H01J37/147
摘要： Systems and methods are provided for focusing a scanned ion beam in an ion implanter. A beam focusing system is provided, comprising first and second magnets providing corresponding magnetic fields that cooperatively provide a magnetic focusing field having a time-varying focusing field center generally corresponding to a time-varying beam position of a scanned ion beam along a scan direction. Methods are presented, comprising providing a focusing field having a focusing field center in the scan plane, and dynamically adjusting the focusing field such that the focusing field center is generally coincident with a time-varying beam position of the scanned ion beam along the scan direction.
摘要翻译： 提供了将扫描离子束聚焦在离子注入机中的系统和方法。 提供了一种束聚焦系统，包括提供相应磁场的第一和第二磁体，其协作地提供磁聚焦场，其具有通常对应于扫描离子束沿扫描方向的时变束位置的时变聚焦场中心。 提出了方法，其包括提供在扫描平面中具有聚焦场中心的聚焦场，以及动态地调整聚焦场，使得聚焦场中心大体上与扫描离子束沿着扫描方向的时变束位置重合 。
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43.发明授权Clamping and de-clamping semiconductor wafers on an electrostatic chuck using wafer inertial confinement by applying a single-phase square wave AC clamping voltage 失效通过施加单相方波交流钳位电压，使用晶片惯性约束将静电卡盘上的半导体晶片夹紧和去夹紧公开(公告)号：US06947274B2
公开(公告)日：2005-09-20
申请号：US10657449
申请日：2003-09-08
IPC分类号： H01L21/683 , H02N13/00 , H01F13/02
CPC分类号： H01L21/6833 , H02N13/00
摘要： The present invention is directed to a method for clamping a wafer to an electrostatic chuck using a single-phase square wave AC clamping voltage. The method comprises determining a single-phase square wave clamping voltage for the electrostatic chuck, wherein the determination is based, at least in part, on an inertial response time of the wafer. The wafer is placed on the electrostatic chuck, wherein a gap between the electrostatic chuck and the wafer is defined. The determined single-phase square wave clamping voltage is then applied, wherein the wafer is generally clamped to the electrostatic chuck within a predetermined distance, while an amount of electrostatic charge is generally not allowed to accumulate, thereby enabling a fast de-clamping of the wafer.
摘要翻译： 本发明涉及使用单相方波交流钳位电压将晶片夹持到静电卡盘的方法。 该方法包括确定用于静电卡盘的单相方波钳位电压，其中所述确定至少部分地基于晶片的惯性响应时间。 将晶片放置在静电卡盘上，其中定义静电卡盘和晶片之间的间隙。 然后施加确定的单相方波钳位电压，其中晶片通常在预定距离内被夹持在静电卡盘上，而静电电荷的量通常不允许累积，从而使得能够快速地去夹紧 晶圆。
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公开(公告)号：US06946403B2
公开(公告)日：2005-09-20
申请号：US10695153
申请日：2003-10-28
申请人： Peter L. Kellerman , Shu Qin , Ernie Allen , Douglas A. Brown
发明人： Peter L. Kellerman , Shu Qin , Ernie Allen , Douglas A. Brown
IPC分类号： H01L21/683 , H01L21/469
CPC分类号： H01L21/6833
摘要： The present invention is directed to a method of forming a clamping plate for a multi-polar electrostatic chuck. The method comprises forming a first electrically conductive layer over a semiconductor platform and defining a plurality of portions of the first electrically conductive layer which are electrically isolated from one another. A first electrically insulative layer is formed over the first electrically conductive layer, the first electrically insulative layer comprising a top surface having a plurality of MEMS protrusions extending a first distance therefrom. A plurality of poles are furthermore electrically connected to the respective plurality of portions of the first electrically conductive layer, wherein a voltage applied between the plurality of poles is operable to induce an electrostatic force in the clamping plate.
摘要翻译： 本发明涉及一种形成多极静电卡盘夹紧板的方法。 该方法包括在半导体平台上形成第一导电层，并且限定彼此电隔离的第一导电层的多个部分。 第一电绝缘层形成在第一导电层之上，第一电绝缘层包括具有从其延伸第一距离的多个MEMS突起的顶表面。 多个极还电连接到第一导电层的相应多个部分，其中施加在多个极之间的电压可操作以在夹持板中引起静电力。
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公开(公告)号：US09267219B2
公开(公告)日：2016-02-23
申请号：US13039789
申请日：2011-03-03
CPC分类号： C30B11/007 , C03B29/08 , C30B15/06 , C30B29/06 , C30B29/08 , Y10T117/1044 , Y10T117/1048 , Y10T117/1068
摘要： The embodiments herein relate to a sheet production apparatus. A vessel is configured to hold a melt of a material and a cooling plate is disposed proximate the melt. This cooling plate configured to form a sheet of the material on the melt. A pump is used. In one instance, this pump includes a gas source and a conduit in fluid communication with the gas source. In another instance, this pump injects a gas into a melt. The gas can raise the melt or provide momentum to the melt.
摘要翻译： 本文的实施例涉及片材生产设备。 容器构造成容纳材料的熔体，并且冷却板设置在熔体附近。 该冷却板构造成在熔体上形成材料片。 使用泵。 在一种情况下，该泵包括气体源和与气体源流体连通的导管。 在另一种情况下，该泵将气体注入熔体中。 气体可以提高熔体或为熔体提供动量。
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公开(公告)号：US09112064B2
公开(公告)日：2015-08-18
申请号：US12948248
申请日：2010-11-17
申请人： Peter L. Kellerman , Frank Sinclair
发明人： Peter L. Kellerman , Frank Sinclair
摘要： This sheet production apparatus comprises a vessel defining a channel configured to hold a melt. The melt is configured to flow from a first point to a second point of the channel. A cooling plate is disposed proximate the melt and is configured to form a sheet on the melt. A spillway is disposed at the second point of the channel. This spillway is configured to separate the sheet from the melt.
摘要翻译： 该片材生产设备包括限定被配置为保持熔体的通道的容器。 熔体构造成从通道的第一点流到第二点。 冷却板靠近熔体设置并且被配置成在熔体上形成片材。 溢流道设置在通道的第二点。 该溢流道构造成将片材与熔体分离。
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公开(公告)号：US08545624B2
公开(公告)日：2013-10-01
申请号：US12487058
申请日：2009-06-18
IPC分类号： C30B13/28
CPC分类号： B22D39/02 , C30B11/001 , C30B11/003 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/403 , C30B29/60
摘要： An apparatus to pump a melt is disclosed. The pump has a chamber that defines a cavity configured to hold the melt. A gas source is in fluid communication with the chamber. A first valve is between the chamber and a first pipe and a second valve is between the chamber and a second pipe. The valves may be check valves in one embodiment.
摘要翻译： 公开了一种用于泵送熔体的装置。 泵具有限定被配置为保持熔体的腔的腔室。 气体源与腔室流体连通。 第一阀在腔室和第一管之间，第二阀在腔室和第二管之间。 在一个实施例中，阀可以是止回阀。
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48.发明授权System and method for controlling deflection of a charged particle beam within a graded electrostatic lens 有权用于控制渐变静电透镜内的带电粒子束的偏转的系统和方法公开(公告)号：US08129695B2
公开(公告)日：2012-03-06
申请号：US12647950
申请日：2009-12-28
申请人： Peter L. Kellerman , Frank Sinclair , Victor Benveniste , Jun Lu
发明人： Peter L. Kellerman , Frank Sinclair , Victor Benveniste , Jun Lu
IPC分类号： G21K1/06
CPC分类号： H01J37/3171 , H01J37/1477 , H01J2237/053 , H01J2237/12 , H01J2237/24514
摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.
摘要翻译： 公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。 该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。 使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。 虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。 在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。 在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。 在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。
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49.发明申请公开(公告)号：US20110155921A1
公开(公告)日：2011-06-30
申请号：US12647950
申请日：2009-12-28
申请人： Peter L. Kellerman , Frank Sinclair , Victor Benveniste , Jun Lu
发明人： Peter L. Kellerman , Frank Sinclair , Victor Benveniste , Jun Lu
CPC分类号： H01J37/3171 , H01J37/1477 , H01J2237/053 , H01J2237/12 , H01J2237/24514
摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.
摘要翻译： 公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。 该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。 使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。 虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。 在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。 在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。 在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。
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50.发明授权Techniques for independently controlling deflection, deceleration and focus of an ion beam 有权用于独立控制离子束的偏转，减速和聚焦的技术公开(公告)号：US07888653B2
公开(公告)日：2011-02-15
申请号：US12348091
申请日：2009-01-02
IPC分类号： H01J3/14 , H01J49/22 , H01J23/083
CPC分类号： H01J37/1471 , H01J37/12 , H01J37/3171
摘要： Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.
摘要翻译： 公开了用于独立地控制离子束的偏转，减速和聚焦的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于独立地控制离子束的偏转，减速和聚焦的装置。 该装置可以包括电极配置，其包括设置在离子束上方的一组上电极和设置在离子束下方的一组下电极。 所述上电极组和下电极组可以围绕离子束的中心射线轨迹对称地定位。 上部电极组和下部电极组之间的电位差也可以沿着中心射线轨迹变化，以反映沿着中心射线轨迹的每个点处的离子束的能量，以独立地控制偏转，减速和聚焦 的离子束。
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