公开(公告)号：US20150108474A1

公开(公告)日：2015-04-23

申请号：US14519524

申请日：2014-10-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki MIYAKE ,  Masahiro KATAYAMA

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869

Abstract: Provided is a display device with high display quality. The display device includes a transistor over a substrate, an inorganic insulating film over the transistor, an organic insulating film over the inorganic insulating film, a capacitor electrically connected to the transistor, and a pixel electrode over the organic insulating film. The transistor includes a gate electrode over the substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. The capacitor includes a metal oxide film over the gate insulating film, the inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. The pixel electrode is formed of a second light-transmitting conductive film and in contact with one of the pair of conductive films and the first light-transmitting conductive film.

Abstract translation: 提供具有高显示质量的显示装置。 显示装置包括在基板上的晶体管，晶体管上的无机绝缘膜，无机绝缘膜上的有机绝缘膜，电连接到晶体管的电容器和有机绝缘膜上的像素电极。 晶体管包括在衬底上的栅电极，与栅电极重叠的氧化物半导体膜，与氧化物半导体膜的一个表面接触的栅绝缘膜和与氧化物半导体膜接触的一对导电膜。 该电容器包括栅极绝缘膜上的金属氧化物膜，无机绝缘膜和无机绝缘膜上的第一透光导电膜。 像素电极由第二透光性导电膜形成，并与一对导电膜和第一透光性导电膜中的一方接触。

公开(公告)号：US20150035777A1

公开(公告)日：2015-02-05

申请号：US14444799

申请日：2014-07-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiharu HIRAKATA ,  Hiroyuki MIYAKE ,  Seiko INOUE ,  Shunpei YAMAZAKI

IPC: G06F1/16 ,  G06F3/041

CPC classification number: G06F1/1652 ,  G06F3/041 ,  G06F2203/04102

Abstract: A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.

Abstract translation: 提供低功耗的显示装置。 此外，提供了其中在可以以折叠状态使用的区域中显示图像的显示装置。 构想的显示装置包括可以打开和折叠的显示部分，感测显示部分的折叠状态的感测部分，以及当显示部分处于折叠状态时生成图像处理部分的图像，其中， 在显示部分的一部分显示黑色图像。

公开(公告)号：US20150015474A1

公开(公告)日：2015-01-15

申请号：US14325603

申请日：2014-07-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Kouhei TOYOTAKA ,  Shunpei YAMAZAKI

IPC: G09G3/36

CPC classification number: G09G3/3648 ,  G09G3/3677 ,  G09G2300/0809 ,  G09G2310/0286 ,  G09G2310/0291 ,  G11C19/28 ,  H01L27/1222 ,  H01L27/124

Abstract: To provide a semiconductor device including a narrowed bezel obtained by designing a gate driver circuit. A gate driver of a display device includes a shift register unit, a demultiplexer circuit, and n signal lines. By connecting the n signal lines for transmitting clock signals to one stage of the shift register unit, (n−3) output signals can be output. The larger n becomes, the smaller the rate of signal lines for transmitting clock signals which do not contribute to output becomes; accordingly, the area of the shift register unit part is small compared to a conventional structure in which one stage of a shift register unit outputs one output signal. Therefore, the gate driver circuit can have a narrow bezel.

Abstract translation: 提供一种包括通过设计栅极驱动器电路而获得的窄边框的半导体器件。 显示装置的栅极驱动器包括移位寄存器单元，解复用器电路和n个信号线。 通过将用于发送时钟信号的n条信号线连接到移位寄存器单元的一级，可以输出（n-3）个输出信号。 较大的n变得越小，用于传输不有助于输出的时钟信号的信号线的速率越小; 因此，与移动寄存器单元的一个级输出一个输出信号的常规结构相比，移位寄存器单元部分的面积较小。 因此，栅极驱动器电路可以具有窄的边框。

公开(公告)号：US20140340363A1

公开(公告)日：2014-11-20

申请号：US14273677

申请日：2014-05-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki IKEDA ,  Seiko INOUE ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA ,  Takashi NAKAGAWA

IPC: G06F3/042 ,  H01L27/15 ,  G06F3/041

CPC classification number: G06F3/042 ,  G06F3/0412 ,  G06F3/0416 ,  G06F2203/04102 ,  G06F2203/04103

Abstract: A novel transmissive imaging panel, a novel imaging panel with a display function, or a novel imaging device is provided. The imaging panel that includes a plurality of windows or pixels arranged in matrix, a photoelectric conversion element extending between the plurality of windows or pixels, and a sensor circuit supplied with a signal from the photoelectric conversion element has been devised.

Abstract translation: 提供了一种新颖的透射成像面板，具有显示功能的新型成像面板或新颖的成像装置。 已经设计了包括排列成矩阵的多个窗口或像素的成像面板，在多个窗口或像素之间延伸的光电转换元件以及被提供有来自光电转换元件的信号的传感器电路。

公开(公告)号：US20140152932A1

公开(公告)日：2014-06-05

申请号：US14080034

申请日：2013-11-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE

IPC: G02F1/133

CPC classification number: G02F1/136213 ,  G02F2001/134372 ,  G09G3/3614 ,  G09G3/3655 ,  G09G2300/0876

Abstract: A liquid crystal display device preventing flicker. The liquid crystal display device includes a plurality of pixels each having a transistor, a liquid crystal element to which a first signal and a second signal having opposite polarities are alternately applied through the transistor, and a capacitor including a first electrode and a second electrode. The liquid crystal element includes a pixel electrode and a common electrode partly overlapping with each other with an insulating film interposed therebetween, and a liquid crystal layer over the pixel electrode and the common electrode. The first electrode of the capacitor is electrically connected to the pixel electrode. The potential of the second electrode changes between a first potential and a second potential having different levels after the first signal is applied until the second signal is applied, whereby a change in the voltage applied to the liquid crystal layer is reduced.

Abstract translation: 一种防止闪烁的液晶显示装置。 液晶显示装置包括：具有晶体管的多个像素，具有相反极性的第一信号和第二信号通过晶体管交替施加的液晶元件，以及包括第一电极和第二电极的电容器。 液晶元件包括像素电极和共同电极，其中间隔绝缘膜彼此部分重叠，并且在像素电极和公共电极上方形成液晶层。 电容器的第一电极电连接到像素电极。 在施加第一信号之后，第二电极的电位在施加了第一信号之后在具有不同电平的第一电位和第二电位之间变化，直到施加到液晶层的电压发生变化。

公开(公告)号：US20140138676A1

公开(公告)日：2014-05-22

申请号：US14079898

申请日：2013-11-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Daisuke MATSUBAYASHI ,  Hiroyuki MIYAKE

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/045 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78627 ,  H01L29/78696

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a semiconductor film overlapping with the gate electrode with the gate insulating film positioned therebetween, a source electrode and a drain electrode that are in contact with the semiconductor film, and an oxide film over the semiconductor film, the source electrode, and the drain electrode. An end portion of the semiconductor film is spaced from an end portion of the source electrode or the drain electrode in a region overlapping with the semiconductor film in a channel width direction. The semiconductor film and the oxide film each include a metal oxide including In, Ga, and Zn. The oxide film has an atomic ratio where the atomic percent of In is lower than the atomic percent of In in the atomic ratio of the semiconductor film.

Abstract translation: 提供了一种高度可靠的半导体器件。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，与栅电极重叠的半导体膜，栅绝缘膜位于其间，与半导体膜接触的源电极和漏极，以及 半导体膜上的氧化膜，源电极和漏电极。 半导体膜的端部与沟道宽度方向上与半导体膜重叠的区域与源电极或漏电极的端部隔开。 半导体膜和氧化膜各自包括包含In，Ga和Zn的金属氧化物。 氧化物膜具有原子比，其中In的原子百分比低于In的原子百分比，以半导体膜的原子比计。

公开(公告)号：US20140104151A1

公开(公告)日：2014-04-17

申请号：US14050931

申请日：2013-10-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE

IPC: G09G3/36

CPC classification number: G09G3/3614 ,  G09G3/3659 ,  G09G2300/0852 ,  G09G2320/0214

Abstract: A liquid crystal display device which has higher definition and reduced power consumption while its image quality is maintained is provided. A switching transistor of an active matrix liquid crystal display device is formed using a transistor having an extremely low off-state current to reduce the area of a capacitor; the capacitance value of parasitic capacitance formed by the left end of a pixel electrode and a first source line is made to be approximately the same as that of parasitic capacitance formed by the right end of the pixel electrode and a second source line; and video signals having one polarity are input to the first source line, and video signals having the other polarity are input to the second source line.

Abstract translation: 提供一种液晶显示装置，其在保持图像质量的同时具有较高的清晰度和降低的功耗。 有源矩阵液晶显示装置的开关晶体管使用具有极低截止电流的晶体管形成，以减小电容器的面积; 使由像素电极和第一源极线的左端形成的寄生电容的电容值与由像素电极和第二源极线的右端形成的寄生电容的电容值大致相同; 并且具有一个极性的视频信号被输入到第一源极线，并且具有另一个极性的视频信号被输入到第二源极线。

公开(公告)号：US20140056400A1

公开(公告)日：2014-02-27

申请号：US14068012

申请日：2013-10-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: G11C19/28

CPC classification number: H03K17/693 ,  G09G3/2092 ,  G09G3/3266 ,  G09G2300/0408 ,  G09G2300/08 ,  G09G2310/0267 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/021 ,  G11C19/28 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78696 ,  H03K17/002

Abstract: An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit.

Abstract translation: 本发明的目的是提供一种驱动电路，该驱动电路包括一个通常的薄膜晶体管，该驱动电路确保了小故障和高可靠性的工作。 驱动器电路包括具有第一晶体管和第二晶体管的反相器电路的静态移位寄存器和包括第三晶体管的开关。 第一至第三晶体管各自包括氧化物半导体的半导体层，并且是耗尽型晶体管。 用于驱动第三晶体管的时钟信号的振幅电压高于用于驱动逆变器电路的电源电压。

公开(公告)号：US20130200366A1

公开(公告)日：2013-08-08

申请号：US13751753

申请日：2013-01-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA

IPC: H01L29/786

CPC classification number: H01L29/78693 ,  H01L29/41733 ,  H01L29/7869

Abstract: To provide a highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer which is over the oxide semiconductor film so as to overlap with the gate electrode layer, and a source electrode layer provided so as to cover part of an outer edge portion of the oxide semiconductor film. An outer edge portion of the drain electrode layer is on an inner side than an outer edge portion of the gate electrode layer.

Abstract translation: 为了提供一种高可靠性的半导体器件，其中包括氧化物半导体膜的晶体管具有稳定的电特性。 半导体器件包括在基板上的栅极电极层，栅极电极层上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜，位于氧化物半导体膜上方以与栅极重叠的漏极层 电极层和设置为覆盖氧化物半导体膜的外缘部的一部分的源电极层。 漏电极层的外缘部位于比栅电极层的外缘部更内侧。

公开(公告)号：US20130168670A1

公开(公告)日：2013-07-04

申请号：US13777106

申请日：2013-02-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO.,LTD.

Inventor： Seiko INOUE ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1251

Abstract: A semiconductor device including a first gate electrode and a second gate electrode formed apart from each other over an insulating surface, an oxide semiconductor film including a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode, and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, and the oxide semiconductor film, and being in direct contact with the oxide semiconductor film is provided.

Abstract translation: 一种半导体器件，包括在绝缘表面上彼此分开形成的第一栅电极和第二栅电极，包括与第一栅极重叠的区域的氧化物半导体膜，其间插入有栅极绝缘膜，与第二栅极重叠的区域 栅极电极，其间插入有栅极绝缘膜，以及与第一栅极电极和第二栅极电极都不重叠的区域，以及覆盖栅极绝缘膜，第一栅极电极，第二栅极电极和氧化物半导体的绝缘膜 膜，并且与氧化物半导体膜直接接触。