公开(公告)号：US11088284B2

公开(公告)日：2021-08-10

申请号：US15871468

申请日：2018-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok Son ,  Eoksu Kim ,  Jaybum Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L23/485 ,  H01L51/00 ,  H01L27/06

Abstract: A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.

公开(公告)号：US20210242291A1

公开(公告)日：2021-08-05

申请号：US17081342

申请日：2020-10-27

Applicant: Samsung Display Co., Ltd.

Inventor： Kyungjin Jeon ,  Soyoung Koo ,  Eoksu Kim ,  Junhyung Lim

IPC: H01L27/32

Abstract: A display apparatus includes a thin film transistor facing a substrate with a buffer layer therebetween and including a semiconductor layer, a channel region, a source region, a drain region, and a gate electrode; a conductive pattern between the substrate and the semiconductor layer and connected to the semiconductor layer, the conductive pattern facing the semiconductor layer with the buffer layer therebetween; a contact hole in the buffer layer and exposing the conductive pattern to outside the buffer layer; and a display element which is electrically connected to the thin film transistor. The source region or the drain region extends through the contact hole in the buffer layer, to contact the conductive pattern and connect the semiconductor layer to the conductive pattern.

公开(公告)号：US20180233575A1

公开(公告)日：2018-08-16

申请号：US15730475

申请日：2017-10-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Seryeong Kim ,  Junhyung Lim ,  Taesang Kim

IPC: H01L29/66 ,  H01L27/32 ,  H01L27/146 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L29/6675 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/14692 ,  H01L27/3225 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern incudes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.