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公开(公告)号：US20240023394A1
公开(公告)日：2024-01-18
申请号：US18373277
申请日：2023-09-27
发明人： Soyoung Koo , Eoksu Kim , Hyungjun Kim , Yunyong Nam , Junhyung Lim , Kyungjin Jeon
IPC分类号： H10K59/131 , G09G3/3291 , G09G3/3266 , H10K59/122
CPC分类号： H10K59/131 , G09G3/3291 , G09G3/3266 , H10K59/122 , G09G2300/0426 , H10K59/1201
摘要： A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.
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公开(公告)号：US11871596B2
公开(公告)日：2024-01-09
申请号：US17082379
申请日：2020-10-28
发明人： Jaybum Kim , Eoksu Kim , Kyoungseok Son , Junhyung Lim , Jihun Lim
IPC分类号： H10K50/805 , H10K77/10 , H10B10/00 , G09G3/32 , G09G3/3233 , H10K59/121 , H10K71/00 , H10K50/30 , H10K59/12 , H01L51/52 , H01L51/00 , H01L27/11 , H01L27/32
CPC分类号： H01L51/5203 , G09G3/32 , G09G3/3233 , H01L27/1108 , H01L27/3262 , H01L51/0096 , G09G2300/0426 , G09G2300/0814 , G09G2300/0842 , G09G2300/0861 , G09G2300/0866 , G09G2310/0245 , G09G2310/0262 , H01L27/3265 , H01L51/0023 , H01L51/5296 , H01L2227/323
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US11677030B2
公开(公告)日：2023-06-13
申请号：US17158824
申请日：2021-01-26
发明人： Sangwoo Sohn , Yeonkeon Moon , Myounghwa Kim , Taesang Kim , Geunchul Park , Joonseok Park , Junhyung Lim , Hyelim Choi
IPC分类号： H01L29/786 , H01L27/32 , H01L29/24 , H01L27/12 , H01L21/8234
CPC分类号： H01L29/7869 , H01L21/823412 , H01L27/1222 , H01L27/1225 , H01L27/3244 , H01L29/24 , H01L29/78696 , H01L27/3262
摘要： A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.
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公开(公告)号：US11171193B2
公开(公告)日：2021-11-09
申请号：US16836490
申请日：2020-03-31
发明人： Kyoungseok Son , Dohyun Kwon , Jonghan Jeong , Jonghyun Choi , Eoksu Kim , Jaybum Kim , Junhyung Lim , Jihun Lim
IPC分类号： H01L27/32 , G09G3/3225 , G09G3/3233 , G09G3/3266 , G09G3/3275 , H01L27/12 , H01L29/786
摘要： A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.
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公开(公告)号：US10790467B2
公开(公告)日：2020-09-29
申请号：US16836005
申请日：2020-03-31
发明人： Jaybum Kim , Eoksu Kim , Kyoungseok Son , Junhyung Lim , Jihun Lim
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US10673008B2
公开(公告)日：2020-06-02
申请号：US16459060
申请日：2019-07-01
发明人： Jaybum Kim , Eoksu Kim , Kyoungseok Son , Junhyung Lim , Jihun Lim
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US20190074303A1
公开(公告)日：2019-03-07
申请号：US16120898
申请日：2018-09-04
发明人： Taesang Kim , Hyunjae Kim , Junhyung Lim , Youngjun Tak
摘要： A method of manufacturing a thin film transistor substrate may include forming a gate electrode on a base substrate, forming a gate insulation layer on the base substrate, the gate insulation layer covering the gate electrode, performing a simultaneous ultraviolet ray irradiation and thermal treatment (SUT) process by irradiating an ultraviolet ray at the gate insulation layer and supplying heat to the gate insulation layer at substantially the same time, forming an active pattern on the gate insulation layer, the active pattern overlapping the gate electrode, and forming a source electrode and a drain electrode on the gate insulation layer, the source electrode and the drain electrode being electrically connected to the active pattern.
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公开(公告)号：US20180366586A1
公开(公告)日：2018-12-20
申请号：US15871468
申请日：2018-01-15
发明人： Kyoungseok Son , Eoksu Kim , Jaybum Kim , Junhyung Lim , Jihun Lim
IPC分类号： H01L29/786 , H01L27/12 , H01L27/32 , H01L23/485
摘要： A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.
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公开(公告)号：US20240040861A1
公开(公告)日：2024-02-01
申请号：US18378656
申请日：2023-10-11
发明人： Jaybum Kim , Myeongho Kim , Yeonhong Kim , Kyoungseok Son , Seungjun Lee , Seunghun Lee , Junhyung Lim
IPC分类号： H10K59/124 , H10K71/00 , H01L27/12 , H10K59/121
CPC分类号： H10K59/124 , H10K71/00 , H01L27/1225 , H10K59/1213 , H01L27/1251 , H10K59/1216 , H01L27/1255 , H01L25/18
摘要： A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.
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公开(公告)号：US11751441B2
公开(公告)日：2023-09-05
申请号：US17332698
申请日：2021-05-27
发明人： Eunhyun Kim , Eunhye Ko , Yeonhong Kim , Kyoungwon Lee , Sunhee Lee , Junhyung Lim
IPC分类号： H10K59/126 , H10K59/131 , H10K77/10 , H10K102/00
CPC分类号： H10K59/126 , H10K59/131 , H10K77/111 , H10K2102/311
摘要： A display apparatus in which an area of a peripheral area may be reduced while having a simple structure, the display apparatus includes a substrate, a bottom metal layer on the substrate and including a first extension line extending from the peripheral area outside a display area into the display area, a semiconductor layer on the bottom metal layer, a gate layer on the semiconductor layer, a first metal layer on the gate layer, and a second metal layer on the first metal layer and including a first data line extending from the peripheral area into the display area and electrically coupled to the first extension line in the peripheral area.
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