Light emitting diode display device with channel region covered by drain electrode

    公开(公告)号:US11574975B2

    公开(公告)日:2023-02-07

    申请号:US16882260

    申请日:2020-05-22

    Abstract: The present disclosure relates to a light emitting diode display device, and a light emitting diode display device according to an exemplary embodiment includes: a substrate; a semiconductor disposed on the substrate; a gate electrode disposed on the semiconductor; an interlayer insulating layer disposed on the substrate and the gate electrode; source and drain electrodes disposed on the interlayer insulating layer and connected to the semiconductor; a first slit provided in the interlayer insulating layer; and a first wire disposed on the interlayer insulating layer and configured to overlap the first slit.

    Organic light emitting diode display

    公开(公告)号:US10170527B2

    公开(公告)日:2019-01-01

    申请号:US15712824

    申请日:2017-09-22

    Abstract: An organic light emitting display device comprises a common voltage line formed over a peripheral region of a substrate; a passivation layer formed over a pixel region of the substrate and the peripheral region; pixel electrodes formed over the pixel region; and a pixel defining layer formed over the pixel region and the peripheral region. The pixel defining layer defines pixel openings overlapping the pixel electrodes, respectively. The device further comprises organic light emitting layers formed over the pixel region, and disposed in the pixel openings and over the pixel electrodes, respectively; and a common electrode formed over the pixel and peripheral regions. The common electrode is disposed over the pixel defining layer and the organic light emitting layers. The common electrode contacts the common voltage line. The passivation layer comprises a portion overlapping the common voltage line but not overlapping the pixel defining layer.

    Thin film transistor circuit device and method of manufacturing the same

    公开(公告)号:US10043830B2

    公开(公告)日:2018-08-07

    申请号:US14864451

    申请日:2015-09-24

    Abstract: A thin film transistor (TFT) circuit device comprises a substrate comprising a major surface; a gate line formed over the substrate and extending in a first direction when viewed in a viewing direction perpendicular to the major surface; an insulating layer formed over the gate line; an electrically conductive line formed over the insulating layer and extending in a second direction when viewed in the viewing direction, the second direction being different from the first direction, the electrically conductive line comprising a source line or a data line; and a semiconductor piece formed over the substrate. The semiconductor piece comprises a portion which is located between the substrate and the gate line and overlaps the gate line and the electrically conductive line at an intersection of the gate line and the electrically conductive line when viewed in the viewing direction.

    Flexible display
    48.
    发明授权

    公开(公告)号:US09881988B2

    公开(公告)日:2018-01-30

    申请号:US15204908

    申请日:2016-07-07

    Inventor: Sun Park

    Abstract: A flexible display is disclosed. In one aspect, the flexible display includes a substrate, a gate insulating layer formed over the substrate, an interlayer insulating layer formed over the gate insulating layer, and a trench disposed between the gate and interlayer insulating layers and configured to accommodate a signal line therein.

    Organic light emitting diode display device and method of manufacturing the same

    公开(公告)号:US09818969B2

    公开(公告)日:2017-11-14

    申请号:US14802487

    申请日:2015-07-17

    CPC classification number: H01L51/5209 H01L27/3258 H01L51/5271

    Abstract: An OLED display device includes a driving semiconductor layer on a substrate, a gate insulating layer covering the driving semiconductor layer, a driving gate electrode and etching preventing layer on the gate insulating layer, a passivation layer on the gate insulating layer, driving gate electrode, and etching preventing layer, and including a plurality of protruding and depressed patterns, driving source and drain electrodes on the passivation layer, a pixel electrode on the protruding and depressed pattern, and exposed etching preventing layer, the pixel electrode having a protruding and depressed shape, a pixel definition layer on the passivation layer, and the driving source and drain electrodes, and having a pixel opening exposing the pixel electrode, an organic emission layer on the exposed pixel electrode, and a common electrode on the organic emission layer and pixel definition layer. The protruding and depressed pattern partially exposes the etching preventing layer.

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