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    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    44.
    发明申请
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
    图像传感器和电子设备，包括它们

    公开(公告)号：US20150200226A1

    公开(公告)日：2015-07-16

    申请号：US14560920

    申请日：2014-12-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yong Wan JIN ,  Kyu Sik KIM ,  Kyung Bae PARK ,  Kwang Hee LEE ,  Dong-Seok LEEM ,  Deukseok CHUNG

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636

    Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.

    Abstract translation: 图像传感器包括集成有至少一个第一光感测装置的半导体衬底，该第一光感测装置被配置为感测蓝色波长区域中的光，以及至少一个第二光感测装置，被配置为感测红色波长区域中的光，滤色器层 半导体衬底并且包括被配置为选择性地吸收蓝色波长区域中的光的蓝色滤色器和被配置为选择性地吸收红色波长区域中的光的红色滤色器以及滤色器层上的第三感光装置，并且包括 一对电极彼此面对，以及一对电极之间的光活性层，并且被配置为选择性地吸收绿色波长区域中的光。

    VISIBLE LIGHT SENSOR EMBEDDED ORGANIC LIGHT EMITTING DIODE DISPLAY PANELS AND DISPLAY DEVICES INCLUDING THE SAME
    46.
    发明申请
    VISIBLE LIGHT SENSOR EMBEDDED ORGANIC LIGHT EMITTING DIODE DISPLAY PANELS AND DISPLAY DEVICES INCLUDING THE SAME 有权

    公开(公告)号：US20210257420A1

    公开(公告)日：2021-08-19

    申请号：US17227845

    申请日：2021-04-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae PARK ,  Sung Young YUN ,  Gae Hwang LEE ,  Yong Wan JIN ,  Chul Joon HEO

    IPC: H01L27/32 ,  H01L31/105

    Abstract: An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.

    IMAGE SENSORS AND ELECTRONIC DEVICES
    47.
    发明申请
    IMAGE SENSORS AND ELECTRONIC DEVICES 有权

    公开(公告)号：US20210233963A1

    公开(公告)日：2021-07-29

    申请号：US17232658

    申请日：2021-04-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Dong-Seok LEEM ,  Kwang Hee LEE ,  Sung Young YUN ,  Yong Wan JIN

    IPC: H01L27/30 ,  G02B5/20 ,  H01L27/146 ,  H01L51/44

    Abstract: An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

    IMAGE SENSORS AND ELECTRONIC DEVICES
    49.
    发明申请
    IMAGE SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：US20190319062A1

    公开(公告)日：2019-10-17

    申请号：US16196229

    申请日：2018-11-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwang Hee LEE ,  Gae Hwang LEE ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H01L27/146 ,  G02B5/20

    Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate that is stacked with the photoelectric device and includes first and second photo-sensing devices configured to sense light associated with second and third colors of three primary colors. The first and second photo-sensing devices may have different thicknesses, different depths from a surface of the semiconductor substrate, or different thicknesses and different depths from the surface of the semiconductor substrate. At least one part of a thickness area of the first photo-sensing device may overlap at least one part of a thickness area of the second photo-sensing device in a parallel direction extending substantially parallel to the surface of the semiconductor substrate.

    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES
    50.
    发明申请
    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：US20190173032A1

    公开(公告)日：2019-06-06

    申请号：US16178691

    申请日：2018-11-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae PARK ,  Takkyun RO ,  Kiyohiko TSUTSUMI ,  Chul Joon HEO ,  Yong Wan JIN

    IPC: H01L51/42 ,  H01L51/44 ,  H01L27/30 ,  H01L51/00

    Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λmax1) of the first photoelectric conversion layer and a peak absorption wavelength (λmax2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

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