Bipolar junction transistor with improved avalanche capability

    公开(公告)号:US09601605B2

    公开(公告)日:2017-03-21

    申请号:US13438902

    申请日:2012-04-04

    摘要: A bipolar junction transistor (BJT), which includes a collector layer, a base layer on the collector layer, an emitter layer on the base layer, and a recess region embedded in the collector layer, is disclosed. A base-collector plane is between the base layer and the collector layer. The recess region is may be below the base-collector plane. Further, the recess region and the base layer are a first type of semiconductor material. By embedding the recess region in the collector layer, the recess region and the collector layer form a first P-N junction, which may provide a point of avalanche for the BJT. Further, the collector layer and the base layer form a second P-N junction. By separating the point of avalanche from the second P-N junction, the BJT may avalanche robustly, thereby reducing the likelihood of avalanche induced failures, particularly in silicon carbide (SiC) BJTs.

    Multi-Arm Polymeric Prodrug Conjugates of Pemetrexed-Based Compounds
    44.
    发明申请
    Multi-Arm Polymeric Prodrug Conjugates of Pemetrexed-Based Compounds 审中-公开
    培美曲塞化合物的多臂聚合物前体缀合物

    公开(公告)号:US20130338175A1

    公开(公告)日:2013-12-19

    申请号:US13995415

    申请日:2011-12-21

    IPC分类号: A61K47/48

    摘要: Among other aspects, provided herein are multi-arm polymeric prodrug conjugates of cabazitaxel-based compounds. Methods of preparing such conjugates as well as methods of administering the conjugates are also provided. Upon administration to a patient, release of the pemetrexed-based compound is achieved.

    摘要翻译: 在其它方面中,本文提供了基于卡巴他汀的化合物的多臂聚合物前药缀合物。 还提供了制备这种缀合物的方法以及给予缀合物的方法。 给予患者后,实现了培美曲塞化合物的释放。

    Vertical junction field effect transistors and diodes having graded doped regions and methods of making
    48.
    发明授权
    Vertical junction field effect transistors and diodes having graded doped regions and methods of making 有权
    具有渐变掺杂区域的垂直结型场效应晶体管和二极管及其制造方法

    公开(公告)号:US08169022B2

    公开(公告)日:2012-05-01

    申请号:US12818232

    申请日:2010-06-18

    IPC分类号: H01L29/66

    摘要: Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN diodes. The devices have graded p-type semiconductor layers and/or regions formed by epitaxial growth. The methods do not require ion implantation. The devices can be made from a wide-bandgap semiconductor material such as silicon carbide (SiC) and can be used in high temperature and high power applications.

    摘要翻译: 对半导体装置及其制造方法进行说明。 器件可以是结型场效应晶体管(JFET)或二极管,例如结型势垒肖特基(JBS)二极管或PiN二极管。 器件具有通过外延生长形成的渐变p型半导体层和/或区域。 该方法不需要离子注入。 这些器件可以由诸如碳化硅(SiC)的宽带隙半导体材料制成,并且可以用于高温和高功率应用中。

    Polymer conjugates of opioid antagonists
    49.
    发明授权
    Polymer conjugates of opioid antagonists 有权
    阿片样物质拮抗剂的聚合物共轭物

    公开(公告)号:US07662365B2

    公开(公告)日:2010-02-16

    申请号:US11332964

    申请日:2006-01-17

    IPC分类号: A81K31/74

    CPC分类号: A61K47/60

    摘要: The invention provides polymer conjugates of opioid antagonists comprising a polymer, such as poly(ethylene glycol), covalently attached to an opioid antagonist. The linkage between the polymer and the opioid antagonist is preferably hydrolytically stable. The invention also includes a method of treating one or more side effects associated with the use of opioid analgesics, such as constipation, nausea, or pruritus, by administering a polymer conjugate of the invention.

    摘要翻译: 本发明提供了阿片样物质拮抗剂的聚合物缀合物,其包含与阿片样物质拮抗剂共价连接的聚合物,例如聚(乙二醇)。 聚合物和阿片样物质拮抗剂之间的连接优选是水解稳定的。 本发明还包括通过施用本发明的聚合物缀合物来治疗与使用阿片样镇痛药如便秘,恶心或瘙痒相关的一种或多种副作用的方法。