-
公开(公告)号：US07931976B2
公开(公告)日：2011-04-26
申请号：US12285429
申请日：2008-10-03
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , Y10T428/11 , Y10T428/1121 , Y10T428/1143 , Y10T428/115
摘要： A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer also has a second magnetic fixed layer whose magnetization is substantially fixed in a second direction opposite to the first direction substantially perpendicular to the surface. A third magnetic layer is provided between the first and second magnetic layers. The direction of magnetization of the third ferromagnetic layer is variable. A first intermediate layer is provided between the first and the third magnetic layers. A second intermediate layer is provided between the second and the third magnetic layers. The pair of electrodes is capable of supplying an electric current flowing in a direction substantially perpendicular to the surface to the multilayer. The sectional area taken parallel to the surface at a thickness midpoint of the first magnetic layer is larger than that of the second magnetic layer.
摘要翻译： 磁记录元件包括具有表面和一对电极的多层。 多层具有第一磁性固定层，其磁化基本上在基本垂直于表面的第一方向固定。 多层还具有第二磁性固定层，其磁化基本上固定在与基本上垂直于表面的第一方向相反的第二方向上。 第三磁性层设置在第一和第二磁性层之间。 第三铁磁层的磁化方向是可变的。 第一中间层设置在第一和第三磁性层之间。 第二中间层设置在第二和第三磁性层之间。 该对电极能够将与表面大致垂直的方向流动的电流供给到多层。 在第一磁性层的厚度中点平行于表面截取的截面积大于第二磁性层的截面面积。
-
公开(公告)号：US20090213638A1
公开(公告)日：2009-08-27
申请号：US12379402
申请日：2009-02-20
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： A magnetic memory element is provided with first and second ferromagnetic fixed layers, a ferromagnetic memory layer, nonmagnetic first and second intermediate layers. The memory layer is disposed between the first and second fixed layers, and has a variable magnetization direction. In order to cancel asymmetry of a write-in current of the element, the element is provided so that the memory layer receives a larger perpendicular stray field from the first fixed layer than from the second fixed layer, and then a magnetization direction of a portion of the memory layer being nearest to the first intermediate layer and the magnetization direction of the first fixed layer are antiparallel to each other whenever a magnetization direction of a portion of the memory layer being nearest to the second intermediate layer and the magnetization direction of the second fixed layer are parallel to each other, and vice versa.
摘要翻译： 磁存储元件设置有第一和第二铁磁固定层，铁磁存储层，非磁性第一和第二中间层。 存储层设置在第一和第二固定层之间，具有可变的磁化方向。 为了消除元件的写入电流的不对称性，提供元件，使得存储层从第一固定层接收比来自第二固定层的更大的垂直杂散场，然后接收部分的磁化方向 所述存储层的最靠近所述第一中间层的磁化方向和所述第一固定层的磁化方向在所述存储层的一部分的磁化方向最接近所述第二中间层的磁化方向和所述第二中间层的磁化方向相互反平行时， 固定层彼此平行，反之亦然。
-
公开(公告)号：US20090015958A1
公开(公告)日：2009-01-15
申请号：US12216918
申请日：2008-07-11
CPC分类号： G11C11/22 , G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A magnetic recording device includes: a laminated body including: a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; and a third ferromagnetic layer with a variable magnetization direction. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by allowing electrons spin-polarized by passing a current in a direction generally perpendicular to the film plane of the layers of the laminated body to act on the second ferromagnetic layer, and by allowing a magnetic field generated by precession of the magnetization of the third ferromagnetic layer to act on the second ferromagnetic layer.
摘要翻译： 磁记录装置包括：层叠体，包括：第一铁磁层，其具有基本上沿第一方向固定的磁化; 具有可变磁化方向的第二铁磁层; 设置在所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 和具有可变磁化方向的第三铁磁层。 第二铁磁层的磁化方向可以响应于电流的取向而被确定，通过使电流通过沿着大体上垂直于层叠体的层的膜平面的方向的电流进行自旋极化以作用于第二铁磁层 铁磁层，并且通过允许由第三铁磁层的磁化进行而产生的磁场作用在第二铁磁层上。
-
公开(公告)号：US08569852B2
公开(公告)日：2013-10-29
申请号：US13238631
申请日：2011-09-21
CPC分类号： H01F10/329 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/3295 , H01L43/08 , H03B15/006
摘要： According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer.
摘要翻译： 根据一个实施例，磁振荡元件包括依次堆叠的第一电极/第二磁性层/非磁性间隔层/第一磁性层/第二电极。 第一磁性层具有可变的磁化方向。 第二磁性层具有固定的磁化方向。 连接第一和第二电极的方向上的第一磁性层的厚度大于第一磁性层的自旋穿透深度的2倍。 第一磁性层的厚度小于第二电极的最大宽度。 当沿该方向观察时，第一磁性层具有设置在第一表面之外的边缘部分。 边缘部分在与第二电极的边缘的切线垂直的方向上的宽度不小于第一磁性层的交换长度。
-
公开(公告)号：US08476724B2
公开(公告)日：2013-07-02
申请号：US13229966
申请日：2011-09-12
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
CPC分类号： H01L43/08 , H01F10/3268 , H01F10/3286
摘要： A spin wave device comprises a metal layer, a pinned layer, a nonmagnetic layer, a free layer, an antiferromagnetic layer, a first electrode, a first insulator layer, and a second electrode. The pinned layer has a magnetization whose direction is fixed. The free layer has a magnetization whose direction is variable.
摘要翻译： 自旋波装置包括金属层，钉扎层，非磁性层，自由层，反铁磁层，第一电极，第一绝缘体层和第二电极。 钉扎层具有方向固定的磁化。 自由层具有方向可变的磁化。
-
公开(公告)号：US20130083595A1
公开(公告)日：2013-04-04
申请号：US13425471
申请日：2012-03-21
IPC分类号： G11C11/14 , H01L21/8246
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1675
摘要： A magnetic memory includes a first magnetic line, an electrode, a write-in portion, a second magnetic line, and a spin-wave generator. The first magnetic line has a plurality of magnetic domains and domain walls, the domain wall separating the magnetic domain. The electrode is provided to both ends of the first magnetic line. The write-in portion is provided adjacent to the first magnetic line. The second magnetic line is provided so that the second magnetic line intersects with the first magnetic line. The spin-wave generator provided to one end of the second magnetic line. The spin-wave detector provided to the other end of the second magnetic line.
摘要翻译： 磁存储器包括第一磁线，电极，写入部分，第二磁线和自旋波发生器。 第一磁线具有多个磁畴和畴壁，畴壁分离磁畴。 电极设置在第一磁力线的两端。 写入部分设置成与第一磁线相邻。 第二磁线被设置成使得第二磁线与第一磁线相交。 提供给第二磁线的一端的自旋波发生器。 旋转波检测器设置在第二磁线的另一端。
-
公开(公告)号：US20120124120A1
公开(公告)日：2012-05-17
申请号：US13349871
申请日：2012-01-13
申请人： Hirofumi Morise , Shiho Nakamura , Daisuke Saida , Tsuyoshi Kondo
发明人： Hirofumi Morise , Shiho Nakamura , Daisuke Saida , Tsuyoshi Kondo
IPC分类号： G06F7/50
CPC分类号： G06F7/388
摘要： According to an embodiment, an adder includes first and second wave computing units and a threshold wave computing unit. Each of the first and second wave computing units includes a pair of first input sections, a first wave transmission medium having a continuous film including a magnetic body connected to the first input sections, and a first wave detector outputting a result of computation by spin waves induced in the first wave transmission medium by the signals corresponding to the two bit values. The threshold wave computing unit includes a plurality of third input sections, a third wave transmission medium having a continuous film including a magnetic body connected to the third input sections, and a third wave detector a result of computation by spin waves induced in the third wave transmission medium.
摘要翻译： 根据实施例，加法器包括第一和第二波计算单元和阈值波计算单元。 第一和第二波形计算单元中的每一个包括一对第一输入部分，具有包括连接到第一输入部分的磁体的连续膜的第一波传播介质和输出通过自旋波的计算结果的第一波检测器 在第一波传输介质中通过对应于两位值的信号感应。 阈值波计算单元包括多个第三输入部分，具有包括连接到第三输入部分的磁体的连续胶片的第三波传播介质，以及第三波检测器，由第三波中感应的自旋波的计算结果 传输介质。
-
48.发明申请公开(公告)号：US20100225312A1
公开(公告)日：2010-09-09
申请号：US12659275
申请日：2010-03-02
申请人： Shiho Nakamura , Hirofumi Morise
发明人： Shiho Nakamura , Hirofumi Morise
IPC分类号： G01R33/28
摘要： A signal processing device includes a continuous film, a plurality of spin wave generators, and at least one signal detector. The continuous film includes at least one magnetic layer. The plurality of spin wave generators are provided on the continuous film in such a manner as to be in direct contact with the continuous film or be in contact with the continuous film while having an insulation layer interposed therebetween, and each has a contact surface with the continuous film in a dot shape and generates a spin wave in a region of the magnetic layer of the continuous film by receiving an input signal, the region being immediately under the contact surface. The signal detector is provided on the continuous film and detects, as an electrical signal, the spin waves generated by the spin wave generators and propagating through the continuous film.
摘要翻译： 信号处理装置包括连续膜，多个自旋波发生器和至少一个信号检测器。 连续膜包括至少一个磁性层。 多个自旋波发生器以与连续膜直接接触的方式设置在连续膜上，或者与连续膜接触，同时具有绝缘层，并且每个具有与该连续膜的接触表面 连续的薄膜，并且通过接收输入信号而在连续薄膜的磁性层的区域中产生自旋波，该区域紧邻接触表面。 信号检测器设置在连续膜上，并且作为电信号检测由自旋波发生器产生的自旋波并通过连续膜传播。
-
公开(公告)号：US07714399B2
公开(公告)日：2010-05-11
申请号：US11902510
申请日：2007-09-21
申请人： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi
发明人： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/1675 , G11C11/5607 , G11C15/02 , G11C15/046 , H01L43/08
摘要： A magnetic memory element includes a laminated construction of an electrode, a first pinned layer, a first intermediate layer, a first memory layer, a second intermediate layer, a second memory layer, a third intermediate layer, a second pinned layer and electrode. The magnetization direction of the first memory layer takes a first and a second directions and that of the second memory layer takes a third and a fourth directions corresponding to a value and polarity of a current between the electrodes. In response to the current, the second intermediate layer has an electric resistance higher than the first intermediate layer and than the third intermediate layer.
摘要翻译： 磁存储元件包括电极，第一钉扎层，第一中间层，第一存储层，第二中间层，第二存储层，第三中间层，第二钉扎层和电极的叠层结构。 第一存储层的磁化方向取第一和第二方向，而第二存储层的磁化方向取三维和四方向对应于电极之间电流的值和极性。 响应于电流，第二中间层的电阻高于第一中间层，而不是第三中间层。
-
公开(公告)号：US20090207724A1
公开(公告)日：2009-08-20
申请号：US12320955
申请日：2009-02-10
IPC分类号： G11B3/70
CPC分类号： G11B25/04 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.
摘要翻译： 磁存储器设置有存储单元。 存储单元包括磁记录元件，用于产生射频电流感应磁场和接地线的互连。 磁记录元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向基本上由通过磁记录层的自旋极化电子反转的磁记录层和设置在第一磁性层之间的第一非磁性层 和磁记录层。 互连设置在磁记录元件的上方，以产生沿与磁记录层的易磁化轴基本垂直的方向作用的射频电流感应磁场。 接地线相对于互连设置在与磁记录元件相对的一侧上。
-
-
-
-
-
-
-
-
-
搜索结果
60 条记录 (耗时 0.032 秒)
