Method of improving sensitivity of electric field sensor, storage apparatus including electric field sensor, and method of reproducing information of the storage apparatus
    41.
    发明授权
    Method of improving sensitivity of electric field sensor, storage apparatus including electric field sensor, and method of reproducing information of the storage apparatus 失效
    提高电场传感器的灵敏度的方法,包括电场传感器的存储装置以及再现存储装置的信息的方法

    公开(公告)号:US07852738B2

    公开(公告)日:2010-12-14

    申请号:US11965836

    申请日:2007-12-28

    IPC分类号: G11B9/00

    CPC分类号: G11B9/02 B82Y10/00 G11B9/1409

    摘要: A storage apparatus includes a ferroelectric recording medium, an electric field sensor including a source region, a drain region and a resistance region electrically connecting the source region to the drain region and having a resistance, which varies according to an intensity of an electric field due to a polarization voltage of an electric domain of the recording medium, a voltage applying unit applying a drain voltage between the source region and the drain region, and a reproducing signal detection unit including at least one negative resistor installed in an electric circuit connecting the drain region to the voltage applying unit, and detecting a change in a voltage between the drain region and the at least one negative resistor.

    摘要翻译: 存储装置包括铁电记录介质,电场传感器,其包括源极区域,漏极区域和将源极区域电连接到漏极区域并具有电阻的电阻区域,该电阻器根据电场的强度而变化 至所述记录介质的电畴的极化电压,在所述源极区域和所述漏极区域之间施加漏极电压的电压施加单元,以及再现信号检测单元,所述再现信号检测单元包括安装在连接所述漏极 区域,并且检测漏极区域和至少一个负电阻器之间的电压变化。

    ELECTRIC FIELD READ/WRITE DEVICE AND METHOD OF DRIVING THE SAME
    43.
    发明申请
    ELECTRIC FIELD READ/WRITE DEVICE AND METHOD OF DRIVING THE SAME 失效
    电场读/写装置及其驱动方法

    公开(公告)号:US20080279062A1

    公开(公告)日:2008-11-13

    申请号:US11930223

    申请日:2007-10-31

    IPC分类号: G11B5/00

    CPC分类号: G11B9/02

    摘要: Provided are an electric field read/write device and a method of driving an electric field read/write device. The method including an electric field read/write head comprising a resistance region disposed between a source region and a drain region and a writing electrode disposed on the resistance region, wherein the method includes: applying a controlling voltage to the writing electrode, wherein the controlling voltage is smaller than a threshold voltage which causes polarization of a recording medium, and reproducing data recorded in the recording medium according to change of an amount of a current flowing through the resistance region according to a polarization direction of electric domains of the recording medium.

    摘要翻译: 提供电场读/写装置和驱动电场读/写装置的方法。 该方法包括:电场读/写头,包括设置在源极区域和漏极区域之间的电阻区域和设置在电阻区域上的写入电极,其中所述方法包括:向所述写入电极施加控制电压,其中所述控制 电压小于导致记录介质的极化的阈值电压,并且根据记录介质的电畴的偏振方向根据流过电阻区域的电流量的变化再现记录在记录介质中的数据。

    METHOD OF FABRICATING ELECTRIC FIELD SENSOR HAVING ELECTRIC FIELD SHIELD
    44.
    发明申请
    METHOD OF FABRICATING ELECTRIC FIELD SENSOR HAVING ELECTRIC FIELD SHIELD 失效
    制造电场感应电场传感器的方法

    公开(公告)号:US20080138924A1

    公开(公告)日:2008-06-12

    申请号:US11872065

    申请日:2007-10-15

    IPC分类号: H01L21/44

    CPC分类号: G01Q60/30

    摘要: A method of manufacturing an electric field sensor having an electric field shield. The method includes providing a substrate doped with a first impurity; forming a resistive tip having a resistance region doped with a low concentration of a second impurity at an apex of a protruding portion of the substrate, and first and second semiconductor electrode regions doped with a high concentration of the second impurity on both slopes of the protruding portion with the resistive region therebetween, wherein the second impurity has a polarity opposite to that of the first impurity; forming a dielectric layer on the resistive tip; forming a mask having a high aspect ratio on the dielectric layer; depositing a metal layer on the dielectric layer; and exposing the dielectric layer formed on the resistance region through the metal layer by removing the mask.

    摘要翻译: 一种制造具有电场屏蔽的电场传感器的方法。 该方法包括提供掺杂有第一杂质的衬底; 在所述基板的突出部的顶点形成具有掺杂有低浓度的第二杂质的电阻区域的电阻端头,以及在所述突出部的两个斜面上掺杂有高浓度的所述第二杂质的第一和第二半导体电极区域 其中所述第二杂质具有与所述第一杂质的极性相反的极性; 在电阻尖端上形成电介质层; 在介电层上形成具有高纵横比的掩模; 在介电层上沉积金属层; 并且通过去除掩模,使形成在电阻区域上的电介质层通过金属层曝光。

    Method of manufacturing semiconductor probe having resistive tip
    45.
    发明申请
    Method of manufacturing semiconductor probe having resistive tip 失效
    制造具有电阻尖端的半导体探针的方法

    公开(公告)号:US20060057757A1

    公开(公告)日:2006-03-16

    申请号:US11212605

    申请日:2005-08-29

    IPC分类号: H01L21/38

    CPC分类号: G01Q70/10 G01Q70/16

    摘要: A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.

    摘要翻译: 一种制造具有电阻尖端的半导体探针的方法。 该方法包括在硅衬底上形成具有矩形形状的第一和第二掩模膜,首先蚀刻硅衬底的上表面,通过蚀刻第一掩模膜形成与尖端颈部的宽度相对应的第三掩模膜,形成 通过使用第三掩模膜作为掩模对硅衬底进行第二次蚀刻,使尖端颈部的宽度达到预定宽度,并且在除去第三掩模膜之后通过退火硅衬底来形成尖端的峰形成部分。 可以制造具有均匀高度的半导体探针和具有均匀颈部宽度的尖端。

    Conductive layer including implanted metal ions
    46.
    发明授权
    Conductive layer including implanted metal ions 有权
    导电层包括植入金属离子

    公开(公告)号:US08349527B2

    公开(公告)日:2013-01-08

    申请号:US13113534

    申请日:2011-05-23

    IPC分类号: G03F1/00

    摘要: A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

    摘要翻译: 提供了纳米压印母版及其制造方法。 该方法包括:将导电金属离子注入包括石英的衬底中,以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂,以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

    NANO IMPRINT MASTER AND METHOD OF MANUFACTURING THE SAME
    50.
    发明申请
    NANO IMPRINT MASTER AND METHOD OF MANUFACTURING THE SAME 有权
    NANO IMPRINT MASTER及其制造方法

    公开(公告)号:US20110223279A1

    公开(公告)日:2011-09-15

    申请号:US13113534

    申请日:2011-05-23

    IPC分类号: B29C59/02

    摘要: A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

    摘要翻译: 提供了纳米压印母版及其制造方法。 该方法包括:将导电金属离子注入包括石英的衬底中,以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂,以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。