公开(公告)号：US10367023B1

公开(公告)日：2019-07-30

申请号：US16005857

申请日：2018-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a pixel region of a substrate. A first dielectric is disposed in trenches within a first side of the substrate. The trenches are defined by first sidewalls disposed on opposing sides of the pixel region. An internal reflection enhancement structure is arranged along the first side of the substrate and is configured to reflect radiation exiting from the substrate back into the substrate.

公开(公告)号：US09893111B2

公开(公告)日：2018-02-13

申请号：US15097319

申请日：2016-04-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Dun-Nian Yaung ,  Wei-Chieh Chiang

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/374 ,  G03B13/36

CPC classification number: H01L27/14645 ,  G03B13/36 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H04N5/3696 ,  H04N5/374 ,  H04N5/37457

Abstract: The present disclosure relates to an image sensor having autofocus function and associated methods. In some embodiments, the image sensor has first and second image sensing pixels arranged one next to another in a row. Each of the first and second image sensing pixels respectively have a left PD (phase detection) pixel including a left photodiode operably coupled to a left transfer gate, and a right PD pixel including a right photodiode operably coupled to a right transfer gate. The right transfer gate of the second image sensing pixel is a mirror image of the left transfer gate of the first image sensing pixel along a boundary line between the first and second image sensing pixels. The left transfer gate of the second image sensing pixel is a mirror image of the right transfer gate of the first image sensing pixel along the boundary line.

公开(公告)号：US20160276394A1

公开(公告)日：2016-09-22

申请号：US14663899

申请日：2015-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Shyh-Fann Ting ,  Wei-Chieh Chiang ,  Yuichiro Yamashita

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A metal grid overlies the semiconductor substrate and is made up of metal grid segments that surround outer perimeters of the photodiodes, respectively, such that first openings within the metal grid overlie the photodiodes, respectively. A low-n grid is made up of low-n grid segments that surround the respective outer perimeters of the photodiodes, respectively, such that second openings within the low-n grid overlie the photodiodes, respectively. Color filters are arranged in the first and second openings of the photodiodes and have a refractive index greater than a refractive index of the low-n grid. A substrate isolation grid extends into the semiconductor substrate and is made up of isolation grid segments that surround outer perimeters of the photodiodes, respectively. A method for manufacturing the BSI pixel sensors is also provided.

Abstract translation: 提供了用于背面照明（BSI）像素传感器的半导体结构。 光电二极管布置在半导体衬底内。 金属网格覆盖半导体衬底，并且由分别围绕光电二极管的外周的金属栅格段组成，使得金属栅格内的第一开口分别覆盖在光电二极管上。 低n栅格分别由围绕光电二极管的相应外周的低n栅格段组成，使得低n栅格内的第二开口分别覆盖光电二极管。 滤光器布置在光电二极管的第一和第二开口中并且具有大于低n栅格的折射率的折射率。 衬底隔离栅格延伸到半导体衬底中，并且由分别围绕光电二极管外周的隔离栅格段组成。 还提供了用于制造BSI像素传感器的方法。