公开(公告)号：US20100231089A1

公开(公告)日：2010-09-16

申请号：US12720778

申请日：2010-03-10

申请人： Hidekazu NAKANISHI ,  Hiroyuki Nakamura ,  Yukio Iwasaki

发明人： Hidekazu NAKANISHI ,  Hiroyuki Nakamura ,  Yukio Iwasaki

IPC分类号： H01L41/053

CPC分类号： H03H3/08 ,  H03H9/25 ,  Y10T29/42

摘要： A surface acoustic wave device includes a piezoelectric element, an IDT electrode formed on the piezoelectric element for exciting a principal wave, a reflection film formed on the piezoelectric element having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region, and a light permeable dielectric layer formed on the piezoelectric element, at least a part of the IDT electrode, and the reflection film. Accordingly, when measuring the film thickness of the light permeable dielectric layer by light interference method, the reflected light from the reflection film having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region can be utilized, so that the film thickness can be measured more accurately.

摘要翻译： 表面声波装置包括压电元件，形成在用于激励主波的压电元件上的IDT电极，形成在压电元件上的具有比可见光波长区域中的压电元件的反射率更高的反射率的反射膜， 以及形成在压电元件上的透光性介电层，IDT电极的至少一部分和反射膜。 因此，当通过光干涉法测量透光电介质层的膜厚时，可以利用具有比可见光波长区域中的压电元件的反射率更高的反射率的反射膜的反射光，使得膜 可以更精确地测量厚度。

公开(公告)号：US20100219905A1

公开(公告)日：2010-09-02

申请号：US12094324

申请日：2007-12-14

申请人： Hiroyuki Nakamura ,  Hidekazu Nakanishi ,  Yukio Iwasaki ,  Ken Matsunami ,  Tetsuya Tsurunari

发明人： Hiroyuki Nakamura ,  Hidekazu Nakanishi ,  Yukio Iwasaki ,  Ken Matsunami ,  Tetsuya Tsurunari

IPC分类号： H03H9/17

CPC分类号： H03H9/1452 ,  H03H9/02858 ,  H03H9/02881 ,  H03H9/02992

摘要： The present invention provides a surface acoustic wave resonator capable of improving the leak of a surface acoustic wave in the transverse direction and reducing the spurious and having superior characteristics. In a surface acoustic wave filter according to the present invention, an interdigital transducer electrode and reflector electrodes are formed on a piezoelectric substrate, and a SiO2 thin film is further formed thereon. The interdigital transducer electrode includes a bus-bar electrode region, a dummy electrode region and a finger overlap region, and the SiO2 thin film is removed from upper sections of the bus-bar electrode regions in the interdigital transducer electrode.

摘要翻译： 本发明提供一种表面声波谐振器，其能够改善横向声表面波的泄漏并减少杂散并具有优异的特性。 在根据本发明的表面声波滤波器中，在压电基板上形成叉指式换能器电极和反射器电极，并且还在其上形成SiO 2薄膜。 叉指式换能器电极包括汇流条电极区域，虚拟电极区域和手指重叠区域，并且从叉指电极区域的指示电极区域的上部去除SiO 2薄膜。

公开(公告)号：US20100164646A1

公开(公告)日：2010-07-01

申请号：US12279631

申请日：2007-02-14

申请人： Hidekazu Nakanishi ,  Ryoichi Takayama ,  Yukio Iwasaki ,  Yosuke Hamaoka ,  Hiroyuki Nakamura

发明人： Hidekazu Nakanishi ,  Ryoichi Takayama ,  Yukio Iwasaki ,  Yosuke Hamaoka ,  Hiroyuki Nakamura

IPC分类号： H03H9/76 ,  H03H9/02 ,  H01L41/22

CPC分类号： H03H9/14538 ,  H03H3/08 ,  H03H9/1452 ,  H03H9/6483 ,  Y10T29/42

摘要： A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)≧4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.

摘要翻译： 表面声波装置包括：包含铌酸锂的基板; IDT设置在所述基板的上表面上并且包括多个电极指; 以及覆盖IDT并在其上表面具有不平坦形状的保护膜。 当IDT的一个间距的间距宽度为p时，一个电极指的宽度为p1，电极指之间的宽度为p2，IDT的厚度为h，满足关系，p1 + p2 = p，h /（2×p）≥4.5％。 由此，能够实现适当的反射特性，能够获得具有优异的频率和电特性的温度系数的表面声波装置。

公开(公告)号：US07498898B2

公开(公告)日：2009-03-03

申请号：US10587240

申请日：2005-02-02

申请人： Hidekazu Nakanishi ,  Ryoichi Takayama ,  Yukio Iwasaki ,  Hiroyuki Nakamura

发明人： Hidekazu Nakanishi ,  Ryoichi Takayama ,  Yukio Iwasaki ,  Hiroyuki Nakamura

IPC分类号： H03H9/72 ,  H03H9/64

CPC分类号： H03H3/02 ,  H03H9/6433

摘要： A plurality of surface acoustic wave resonators including a comb electrode and a grating reflector are coupled on a piezoelectric substrate. Dielectric film is formed on the surface of at least one surface acoustic wave resonator. No dielectric film is formed on the surface of at least one other surface acoustic wave resonator. Thus, a SAW filter where the insertion loss into a pass band is small, the steepness is sufficient, and the band is wide can be obtained.

摘要翻译： 包括梳状电极和光栅反射器的多个声表面波谐振器耦合在压电基片上。 介电膜形成在至少一个表面声波谐振器的表面上。 在至少一个其它表面声波谐振器的表面上不形成介质膜。 因此，其中插入损耗进入通带的SAW滤波器小，陡度足够，并且可以获得宽带。

公开(公告)号：US20070152774A1

公开(公告)日：2007-07-05

申请号：US10587240

申请日：2005-02-02

申请人： Hidekazu Nakanishi ,  Takayama Ryoichi ,  Yukio Iwasaki ,  Hiroyuki Nakamura

发明人： Hidekazu Nakanishi ,  Takayama Ryoichi ,  Yukio Iwasaki ,  Hiroyuki Nakamura

IPC分类号： H03H9/72 ,  H03H9/64

CPC分类号： H03H3/02 ,  H03H9/6433

摘要： A plurality of surface acoustic wave resonators (15through 20) including a comb electrode and a grating reflector are coupled on piezoelectric substrate (12). Dielectric film (14) is formed on the surface of at least one surface acoustic wave resonator, of surface acoustic wave resonators (15 through 20). No dielectric film (14) is formed on the surface of at least another surface acoustic wave resonator. Thus, an SAW filter where the insertion loss into a band is small, the steepness is sufficient, and the band is wide can be obtained.

摘要翻译： 包括梳状电极和光栅反射器的多个表面声波谐振器（15至20）耦合在压电基片（12）上。 在表面声波谐振器（15〜20）的至少一个表面声波谐振器的表面上形成介质膜（14）。 在至少另一声表面波谐振器的表面上不形成绝缘膜（14）。 因此，在带内的插入损耗小的情况下，陡度足够，能够获得宽带的SAW滤波器。

公开(公告)号：US08410865B2

公开(公告)日：2013-04-02

申请号：US12827091

申请日：2010-06-30

申请人： Toru Jibu ,  Shoji Okamoto ,  Yosuke Hamaoka ,  Hiroyuki Nakamura

发明人： Toru Jibu ,  Shoji Okamoto ,  Yosuke Hamaoka ,  Hiroyuki Nakamura

IPC分类号： H03H9/15 ,  H01L41/04

CPC分类号： H03H9/02992 ,  H03H9/725

摘要： A SAW filter includes a piezoelectric body, an IDT electrode on the piezoelectric body, and signal wiring electrically connected to the IDT electrode. The signal wiring has a thickness not less than a skin depth specified based on the frequency of a signal passing through the signal wiring and the electrical conductivity of the signal wiring. As a result, the signal wiring has low propagation loss of the signal passing through it, so that the SAW filter has excellent transmission characteristics.

摘要翻译： SAW滤波器包括压电体，压电体上的IDT电极和与IDT电极电连接的信号线。 信号布线的厚度不小于根据通过信号布线的信号的频率和信号布线的导电率而指定的皮肤深度。 结果，信号线路的信号传播损耗低，SAW滤波器具有优异的传输特性。

公开(公告)号：US20110001578A1

公开(公告)日：2011-01-06

申请号：US12827091

申请日：2010-06-30

申请人： Toru JIBU ,  Shoji Okamoto ,  Yosuke Hamaoka ,  Hiroyuki Nakamura

发明人： Toru JIBU ,  Shoji Okamoto ,  Yosuke Hamaoka ,  Hiroyuki Nakamura

IPC分类号： H03H9/64

CPC分类号： H03H9/02992 ,  H03H9/725

摘要： A SAW filter includes a piezoelectric body, an IDT electrode on the piezoelectric body, and signal wiring electrically connected to the IDT electrode. The signal wiring has a thickness not less than a skin depth specified based on the frequency of a signal passing through the signal wiring and the electrical conductivity of the signal wiring. As a result, the signal wiring has low propagation loss of the signal passing through it, so that the SAW filter has excellent transmission characteristics.

摘要翻译： SAW滤波器包括压电体，压电体上的IDT电极和与IDT电极电连接的信号线。 信号布线的厚度不小于根据通过信号布线的信号的频率和信号布线的导电率而指定的皮肤深度。 结果，信号线路的信号传播损耗低，SAW滤波器具有优异的传输特性。

公开(公告)号：US20060164184A1

公开(公告)日：2006-07-27

申请号：US11388297

申请日：2006-03-24

申请人： Hiroyuki Nakamura ,  Keiji Onishi ,  Takashi Inoue

发明人： Hiroyuki Nakamura ,  Keiji Onishi ,  Takashi Inoue

IPC分类号： H03H9/72 ,  H03H9/64

CPC分类号： H03H9/0038 ,  H03H9/0042 ,  H03H9/02574 ,  H03H9/02952

摘要： A surface acoustic wave filter including a piezoelectric substrate, IDT electrodes which are formed on the piezoelectric substrate and are connected to balanced type terminals. Further, IDT electrodes are formed on the piezoelectric substrate and are connected to an unbalanced type terminal, connection electrodes of connecting the IDT electrodes, the IDT electrodes IDT electrodes to the balanced type terminals or the unbalanced type terminal, and a dielectric thin film formed between the piezoelectric substrate and the IDT electrodes, the IDT electrodes, the connection electrodes.

摘要翻译： 一种表面声波滤波器，包括压电基片，形成在压电基片上并与平衡型端子连接的IDT电极。 此外，IDT电极形成在压电基板上，并且连接到不平衡型端子，将IDT电极，IDT电极IDT电极连接到平衡型端子或不平衡型端子的连接电极以及形成在 压电基板和IDT电极，IDT电极，连接电极。

公开(公告)号：US07046102B2

公开(公告)日：2006-05-16

申请号：US10473129

申请日：2003-03-03

申请人： Hiroyuki Nakamura ,  Keiji Onishi ,  Takashi Inoue

发明人： Hiroyuki Nakamura ,  Keiji Onishi ,  Takashi Inoue

IPC分类号： H03H9/72 ,  H03H9/64

CPC分类号： H03H9/0038 ,  H03H9/0042 ,  H03H9/02574 ,  H03H9/02952

摘要： A surface acoustic wave filter including a piezoelectric substrate, IDT electrodes which are formed on the piezoelectric substrate and are connected to balanced type terminals. Further, IDT electrodes are formed on the piezoelectric substrate and are connected to an unbalanced type terminal, connection electrodes of connecting the IDT electrodes, the IDT electrodes IDT electrodes to the balanced type terminals or the unbalanced type terminal, and a dielectric thin film formed between the piezoelectric substrate and the IDT electrodes, the IDT electrodes, the connection electrodes.

公开(公告)号：US20120223789A1

公开(公告)日：2012-09-06

申请号：US13405415

申请日：2012-02-27

申请人： Takashi INOUE ,  Hiroyuki Nakamura

发明人： Takashi INOUE ,  Hiroyuki Nakamura

IPC分类号： H03H9/64 ,  H01L41/053

CPC分类号： H01L41/053 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2924/1815 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02102 ,  H03H9/0576 ,  H03H9/059 ,  H03H9/1085 ,  H03H9/1092 ,  H03H9/64

摘要： An elastic-wave filter device includes a first piezoelectric substrate, a second piezoelectric substrate, a first pillar-like wiring electrode, and a second pillar-like wiring electrode. The first and second substrates have a first and a second IDT electrodes on their top faces respectively. A lateral face of the second substrate confronts a lateral face of the first substrate. The first pillar-like electrode and the second pillar-like electrode are formed above the first and the second substrates respectively, and are electrically connected to the first and the second IDT electrodes respectively. The first substrate is thicker than the second substrate. A distance between a plane including the top face of the first substrate and a plane including the top face of the second substrate is smaller than a distance between a plane including an underside of the first substrate and a plane including an underside of the second substrate.

摘要翻译： 弹性波滤波器装置包括第一压电基板，第二压电基板，第一柱状布线电极和第二柱状布线电极。 第一和第二基板分别在其顶面上具有第一和第二IDT电极。 第二基板的侧面面对第一基板的侧面。 第一柱状电极和第二柱状电极分别形成在第一和第二基板的上方，分别电连接到第一和第二IDT电极。 第一衬底比第二衬底厚。 包括第一基板的顶面的平面和包括第二基板的顶面的平面之间的距离小于包括第一基板的下侧的平面和包括第二基板的下侧的平面之间的距离。