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1.发明授权Surface acoustic wave device, surface acoustic wave filter and antenna duplexer using the same, and electronic equipment using the same 有权表面声波装置，表面声波滤波器和使用其的天线双工器，以及使用其的电子设备公开(公告)号：US08035460B2
公开(公告)日：2011-10-11
申请号：US12279631
申请日：2007-02-14
CPC分类号： H03H9/14538 , H03H3/08 , H03H9/1452 , H03H9/6483 , Y10T29/42
摘要： A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)≧4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.
摘要翻译： 表面声波装置包括：包含铌酸锂的基板; IDT设置在所述基板的上表面上并且包括多个电极指; 以及覆盖IDT并在其上表面具有不平坦形状的保护膜。 当IDT的一个间距的间距宽度为p时，一个电极指的宽度为p1，电极指之间的宽度为p2，IDT的厚度为h，满足关系，p1 + p2 = p，h /（2×p）≥4.5％。 由此，能够实现适当的反射特性，能够获得具有优异的频率和电特性的温度系数的表面声波装置。
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2.发明申请SURFACE ACOUSTIC WAVE DEVICE, SURFACE ACOUSTIC WAVE FILTER AND ANTENNA DUPLEXER USING THE SAME, AND ELECTRONIC EQUIPMENT USING THE SAME 有权表面声波装置，表面声波滤波器及使用其的天线双工器及使用其的电子设备公开(公告)号：US20100164646A1
公开(公告)日：2010-07-01
申请号：US12279631
申请日：2007-02-14
CPC分类号： H03H9/14538 , H03H3/08 , H03H9/1452 , H03H9/6483 , Y10T29/42
摘要： A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)≧4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.
摘要翻译： 表面声波装置包括：包含铌酸锂的基板; IDT设置在所述基板的上表面上并且包括多个电极指; 以及覆盖IDT并在其上表面具有不平坦形状的保护膜。 当IDT的一个间距的间距宽度为p时，一个电极指的宽度为p1，电极指之间的宽度为p2，IDT的厚度为h，满足关系，p1 + p2 = p，h /（2×p）≥4.5％。 由此，能够实现适当的反射特性，能够获得具有优异的频率和电特性的温度系数的表面声波装置。
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公开(公告)号：US07498898B2
公开(公告)日：2009-03-03
申请号：US10587240
申请日：2005-02-02
CPC分类号： H03H3/02 , H03H9/6433
摘要： A plurality of surface acoustic wave resonators including a comb electrode and a grating reflector are coupled on a piezoelectric substrate. Dielectric film is formed on the surface of at least one surface acoustic wave resonator. No dielectric film is formed on the surface of at least one other surface acoustic wave resonator. Thus, a SAW filter where the insertion loss into a pass band is small, the steepness is sufficient, and the band is wide can be obtained.
摘要翻译： 包括梳状电极和光栅反射器的多个声表面波谐振器耦合在压电基片上。 介电膜形成在至少一个表面声波谐振器的表面上。 在至少一个其它表面声波谐振器的表面上不形成介质膜。 因此，其中插入损耗进入通带的SAW滤波器小，陡度足够，并且可以获得宽带。
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4.发明授权Surface acoustic wave device and manufacturing method of the same surface acoustic wave device 有权声表面波装置及相同声表面波装置的制造方法公开(公告)号：US08174165B2
公开(公告)日：2012-05-08
申请号：US12720778
申请日：2010-03-10
摘要： A surface acoustic wave device includes a piezoelectric element, an IDT electrode formed on the piezoelectric element for exciting a principal wave, a reflection film formed on the piezoelectric element having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region, and a light permeable dielectric layer formed on the piezoelectric element, at least a part of the IDT electrode, and the reflection film. Accordingly, when measuring the film thickness of the light permeable dielectric layer by light interference method, the reflected light from the reflection film having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region can be utilized, so that the film thickness can be measured more accurately.
摘要翻译： 表面声波装置包括压电元件，形成在用于激励主波的压电元件上的IDT电极，形成在压电元件上的具有比可见光波长区域中的压电元件的反射率更高的反射率的反射膜， 以及形成在压电元件上的透光性介电层，IDT电极的至少一部分和反射膜。 因此，当通过光干涉法测量透光电介质层的膜厚时，可以利用具有比可见光波长区域中的压电元件的反射率更高的反射率的反射膜的反射光，使得膜 可以更精确地测量厚度。
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5.发明授权Surface acoustic wave resonator, and surface acoustic wave filter and antenna duplexer in which the surface acoustic wave resonator is used 有权表面声波谐振器，表面声波滤波器和使用声表面波谐振器的天线双工器公开(公告)号：US07965155B2
公开(公告)日：2011-06-21
申请号：US12094324
申请日：2007-12-14
CPC分类号： H03H9/1452 , H03H9/02858 , H03H9/02881 , H03H9/02992
摘要： The present invention provides a surface acoustic wave resonator capable of improving a leak of a surface acoustic wave in the transverse direction and reducing the spurious and having superior characteristics. In a surface acoustic wave filter according to the present invention, an interdigital transducer electrode and reflector electrodes are formed on a piezoelectric substrate, and a SiO2 thin film is formed on at least a portion of the interdigital transducer electrode. The interdigital transducer electrode includes a bus-bar electrode region, a dummy electrode region and a finger overlap region, such that the SiO2 thin film is removed from upper sections of the bus-bar electrode regions of the interdigital transducer electrode.
摘要翻译： 本发明提供一种表面声波谐振器，其能够改善横向声表面波的泄漏并减少杂散并具有优异的特性。 在根据本发明的表面声波滤波器中，在压电基板上形成叉指式换能器电极和反射器电极，在交叉指型换能器电极的至少一部分上形成SiO 2薄膜。 叉指式换能器电极包括母线电极区域，虚拟电极区域和手指重叠区域，从而从指叉式换能器电极的汇流条电极区域的上部去除SiO 2薄膜。
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6.发明申请SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD OF THE SAME SURFACE ACOUSTIC WAVE DEVICE 有权表面声波装置及相同表面声波装置的制造方法公开(公告)号：US20100231089A1
公开(公告)日：2010-09-16
申请号：US12720778
申请日：2010-03-10
IPC分类号： H01L41/053
摘要： A surface acoustic wave device includes a piezoelectric element, an IDT electrode formed on the piezoelectric element for exciting a principal wave, a reflection film formed on the piezoelectric element having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region, and a light permeable dielectric layer formed on the piezoelectric element, at least a part of the IDT electrode, and the reflection film. Accordingly, when measuring the film thickness of the light permeable dielectric layer by light interference method, the reflected light from the reflection film having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region can be utilized, so that the film thickness can be measured more accurately.
摘要翻译： 表面声波装置包括压电元件，形成在用于激励主波的压电元件上的IDT电极，形成在压电元件上的具有比可见光波长区域中的压电元件的反射率更高的反射率的反射膜， 以及形成在压电元件上的透光性介电层，IDT电极的至少一部分和反射膜。 因此，当通过光干涉法测量透光电介质层的膜厚时，可以利用具有比可见光波长区域中的压电元件的反射率更高的反射率的反射膜的反射光，使得膜 可以更精确地测量厚度。
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7.发明申请SURFACE ACOUSTIC WAVE RESONATOR, AND SURFACE ACOUSTIC WAVE FILTER AND ANTENNA DUPLEXER IN WHICH THE SURFACE ACOUSTIC WAVE RESONATOR IS USED 有权表面声波谐波器，表面声波滤波器和使用表面声波谐振器的天线双工器公开(公告)号：US20100219905A1
公开(公告)日：2010-09-02
申请号：US12094324
申请日：2007-12-14
IPC分类号： H03H9/17
CPC分类号： H03H9/1452 , H03H9/02858 , H03H9/02881 , H03H9/02992
摘要： The present invention provides a surface acoustic wave resonator capable of improving the leak of a surface acoustic wave in the transverse direction and reducing the spurious and having superior characteristics. In a surface acoustic wave filter according to the present invention, an interdigital transducer electrode and reflector electrodes are formed on a piezoelectric substrate, and a SiO2 thin film is further formed thereon. The interdigital transducer electrode includes a bus-bar electrode region, a dummy electrode region and a finger overlap region, and the SiO2 thin film is removed from upper sections of the bus-bar electrode regions in the interdigital transducer electrode.
摘要翻译： 本发明提供一种表面声波谐振器，其能够改善横向声表面波的泄漏并减少杂散并具有优异的特性。 在根据本发明的表面声波滤波器中，在压电基板上形成叉指式换能器电极和反射器电极，并且还在其上形成SiO 2薄膜。 叉指式换能器电极包括汇流条电极区域，虚拟电极区域和手指重叠区域，并且从叉指电极区域的指示电极区域的上部去除SiO 2薄膜。
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公开(公告)号：US20070152774A1
公开(公告)日：2007-07-05
申请号：US10587240
申请日：2005-02-02
CPC分类号： H03H3/02 , H03H9/6433
摘要： A plurality of surface acoustic wave resonators (15through 20) including a comb electrode and a grating reflector are coupled on piezoelectric substrate (12). Dielectric film (14) is formed on the surface of at least one surface acoustic wave resonator, of surface acoustic wave resonators (15 through 20). No dielectric film (14) is formed on the surface of at least another surface acoustic wave resonator. Thus, an SAW filter where the insertion loss into a band is small, the steepness is sufficient, and the band is wide can be obtained.
摘要翻译： 包括梳状电极和光栅反射器的多个表面声波谐振器（15至20）耦合在压电基片（12）上。 在表面声波谐振器（15〜20）的至少一个表面声波谐振器的表面上形成介质膜（14）。 在至少另一声表面波谐振器的表面上不形成绝缘膜（14）。 因此，在带内的插入损耗小的情况下，陡度足够，能够获得宽带的SAW滤波器。
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公开(公告)号：US08669832B2
公开(公告)日：2014-03-11
申请号：US13125633
申请日：2010-02-23
CPC分类号： H03H9/02992 , H03H3/08 , H03H9/02685 , H03H9/14517
摘要： An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.
摘要翻译： 声波装置包括叉指式换能器（IDT）电极和面向IDT电极的单独电极。 IDT电极包括彼此面对的第一和第二梳状电极。 第一梳状电极包括第一汇流条，第一交叉指状电极指和第一虚拟电极指。 所述第二梳状电极包括与所述第一交叉指状物电极指相交叉的第二汇流条第二交叉指状电极指，所述第二虚拟电极指指向所述第一交叉指状电极指，所述加权部和非加权部。 加权部分在第二交叉指状电极指和第二虚拟电极指之间的空间具有电极。 在非加重部分中，在非叉指区域中最靠近分离电极的空间之外的空间中不存在电极。 该声波装置防止IDT电极和分离电极之间的短路，并且提供抑制不想要的波的优良特性。
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公开(公告)号：US20140001919A1
公开(公告)日：2014-01-02
申请号：US14004163
申请日：2012-03-05
IPC分类号： H01L41/047
CPC分类号： H03H9/25 , H01L41/047 , H03H9/02818 , H03H9/02992
摘要： An elastic wave element includes a piezoelectric substrate, an IDT electrode, and a first dielectric film. The IDT electrode includes a first bus bar electrode, a second bus bar electrode, first electrode fingers, and second electrode fingers. The piezoelectric substrate includes a bus bar electrode region, an alternately disposed region, and an intermediate region. The first dielectric film is formed in at least a part of the intermediate region, and formed of a medium in which acoustic velocity of a transverse wave propagating in the first dielectric film is lower than acoustic velocity of a main elastic wave in the alternately disposed region.
摘要翻译： 弹性波元件包括压电基片，IDT电极和第一电介质膜。 IDT电极包括第一母线电极，第二母线电极，第一电极指和第二电极指。 压电基板包括汇流条电极区域，交替设置的区域和中间区域。 第一电介质膜形成在中间区域的至少一部分中，并且由在第一电介质膜中传播的横波的声速低于交替设置区域中的主弹性波的声速的介质形成 。
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